SMN18T50P Search Results
SMN18T50P Datasheets Context Search
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Contextual Info: SMN18T50P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS = 500V Low gate charge: Qg=46nC Typ. Low drain-source On resistance: RDS(on)=0.3 (Max.) 100% avalanche tested RoHS compliant device |
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SMN18T50P SMN18T50 O-220AB SDB20D45 29-AUG-11 KSD-T0P028-000 |