SMINI2F5B Search Results
SMINI2F5B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DB2J314
Abstract: DB3X314 DB2J31400L
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Original |
2002/95/ecdb2j314db3x314k667-db2j31400l+2 | |
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Contextual Info: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz |
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tt4-ea-11555dz2j130ul-94 | |
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Contextual Info: Doc No. TT4-EA-11556 Revision. 3 Product Standards Zener Diode DZ2J1400L DZ2J1400L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz |
Original |
tt4-ea-11556dz2j140ul-94 | |
DB2J50100LContextual Info: Doc No. TT4-EA-12350 Revision. 2 Product Standards Schottky Barrier Diode DB2J50100L DB2J50100L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.25 0.35 • Features 0.13 2 1.7 2.5 Short reverse recovery time trr Low terminal capacitance Ct |
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tt4-ea-12350db2j50100lul-94 | |
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Contextual Info: Doc No. TT4-EA-11548 Revision. 4 Product Standards Zener Diode DZ2J0680L DZ2J0680L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz |
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tt4-ea-11548dz2j068ul-94 | |
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Contextual Info: Doc No. TT4-EA-11547 Revision. 4 Product Standards Zener Diode DZ2J0620L DZ2J0620L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz |
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tt4-ea-11547dz2j062ul-94 | |
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Contextual Info: Doc No. TT4-EA-11566 Revision. 4 Product Standards Zener Diode DZ2J3600L DZ2J3600L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz |
Original |
tt4-ea-11566dz2j360ul-94 | |
marking 2U diode
Abstract: marking 2U 02 diode glass diode marking 2U
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Original |
tt4-ea-11538dz2j027ul-94marking 2u diode+2 | |
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Contextual Info: Doc No. TT4-EA-11563 Revision. 3 Product Standards Zener Diode DZ2J2700L DZ2J2700L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz |
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tt4-ea-11563dz2j270ul-94 | |
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Contextual Info: DB2J313 Silicon epitaxial planar type Unit: mm For small current rectification • Features Low forward voltage VF and small reverse current IR Low terminal capacitance Ct Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant |
Original |
db2j313ul-94db2j31300l | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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Original |
respons39o-220d-a1ma26p02maz3082j+15 | |
dz2j075Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J075 Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit • Features Excellent rising characteristics of zener current Iz Low zener operating resistance RZ |
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2002/95/ecdz2j075ul-94 | |
MT9v034
Abstract: mouser 1608X7R 1H334K LI-VM34LP DA2JF810 ELE Panasonic 2012X7R RAM IC 1h225
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Original |
da2jf8100l667-da2jf8100ltail/panasonic-semiconductors/da2jf8100l/252bcv6flocpotzinv+10 | |
DA2J101Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DA2J101 Silicon epitaxial planar type For high speed switching circuits • Features Package Packaging Code SMini2-F5-B Pin Name 1: Cathode 2: Anode Small reverse current IR |
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2002/95/ecda2j101 | |
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Contextual Info: Doc No. TT4-EA-11544 Revision. 5 Product Standards Zener Diode DZ2J0470L DZ2J0470L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz |
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tt4-ea-11544dz2j047ul-94 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB2J317 (Tentative) Silicon epitaxial planar type For rectification • Package Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Symbol Rating Unit VR 30 V Forward current (Average) *1 |
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2002/95/ecdb2j317 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J140 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature |
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2002/95/ecdz2j140 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J330 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature |
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2002/95/ecdz2j330 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J100 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature |
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2002/95/ecdz2j100 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J075 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature |
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2002/95/ecdz2j075 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J180 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature |
Original |
2002/95/ecdz2j180 | |
DA2J104
Abstract: ZKF00122BED DA2J10 DA2J
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Original |
2002/95/ecda2j104zkf00122bedda2j10+1 | |
DA2J101
Abstract: DA2J10 DA2J ZKF00121BED
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Original |
2002/95/ecda2j101da2j10da2j+1 | |
DZ2J033
Abstract: ZKE00079BED DZ2J
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Original |
2002/95/ecdz2j033zke00079beddz2j | |