SMD TSOP C3 Search Results

NTHD4P02F

Abstract: NTHD4P02FT1 NTHD4P02FT1G
Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP-6 Package with Similar Thermal

NTHD4P02FT1G

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

NTHD4P02FT1G

Abstract: marking code vishay SILICONIX SMD TSOP C3 NTHD4P02F NTHD4P02FT1
Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P−Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •

capacitor 10MF

Contextual Info: NCP1522BUGEVB NCP1522B Adjustable Output Voltage Step-Down Converter Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Overview which reduces component size by allowing smaller inductors and capacitors. Automatic switching PWM/PFM

tsop-5

Abstract: TLS-P-004-A-1106-BR C1608X5R1A475 A108B A114 A115 JESD22 JESD78 NCP1521 NCP1521B
Contextual Info: NCP1521BEVB NCP1521B Adjustable Output Voltage Step−Down Converter Demonstration Board http://onsemi.com Prepared by: Bertrand Renaud On Semiconductor DEMONSTRATION NOTE Overview The NCP1521B step−down PWM DC−DC converter is optimized for portable applications powered from one cell

IC 74HC14

Abstract: 74HC14 oscillator application note crystal 16MHZ Header 2x5 Pitch 2mm IC 74HC573 IC 3528 TANTAL 74HC14 oscillator smd IC 74HC14 DATA SHEET HEADER 2MM 20PIN
Contextual Info: BD REV : 1.2 IIM7300 No. COUNT LOCATION 1 1 U6 2 1 U7 3 1 U1 4 1 U2 5 1 U4 6 1 U4 7 1 U3 8 1 U5 9 1 OSC1 10 1 Y1 11 2 L1, L2 12 2 C1, C2 BC2, BC3, BC4, C5, BC5, C6, C7, 13 16 BC8,BC1-1, BC1-2, BC6-1, BC6-2, BC6-3,BC6-4, BC7-1, BC7-2 14 1 C3 15 1 CP1 16 2 D1, D2

MIPW3226

Abstract: C1608X5R0J106 NCP1529 TFC252005 GRM21BR71C475KA C1608X5R0J475 NCP1529ASNT1GEVB TLS-P-003-A-0907-BBR RESISTOR POTENTIOMETER JMK212BY475MG
Contextual Info: NCP1529ASNT1GEVB, NCP1529MUTBGEVB NCP1529 Series 1.7 MHz, 1 A, High Efficiency, Low Ripple, Adjustable Output Voltage Step-down Converter Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Overview allowing a small inductor and capacitors. Automatic

SMD IC 2025 bl

Abstract: ssop64 D560 MK 50075 N QFP Package 128 lead .5mm DIP16-C-300-2 R400 S115 960f FPQ20
Contextual Info: J2T0011-38-60 ま え が き 平素は「沖半導体製品」を御愛用いただき厚く御礼 申し上げます。 エレクトロニクス分野におきましては 半導体製品 の応用はますます広がりをみせており、その性能 機

TSOP1738 working

Abstract: u2506b how to test TSOP1738 sensor IR TSOP1738 remote control FOR HOME APPLIANCES Infrared sensor TSOP 1738 u1a 4093 TSOP1738 PIN CONFIGURATION working of TSOP1738 TSOP1738 device automatic fan control with tsop1738
Contextual Info: TSOP1x IR Detector Photomodules TELEFUNKEN Semiconductors 08.97 Table of Contents General Information. 3 Introduction . 3

Contextual Info: NCP1521 1.5 MHz, 600 mA, High−Efficiency, Low Quiescent Current, Adjustable Output Voltage Step−Down Converter http://onsemi.com The NCP1521 step−down PWM DC−DC converter is optimized for portable applications powered from one cell Li−ion or three cell

amd elan 520

Abstract: smd transistor 857 data transistor SMD p12 EC2500ETT-8 u47 K SMD SOT23 transistor MARK Y2 ISL-8032VT PALCE22V10H-5JC ISL-8032
Contextual Info: Élan SC520 Microcontroller Customer Development Platform User’s Manual Order #22450A Élan™SC520 Microcontroller Customer Development Platform User’s Manual Copyright 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. "AMD" products. AMD

NCP1521

Abstract: NCP1521ASNT1G A108B A114 A115 JESD22 SMD INDUCTOR 100 HARWIN LQ coil UDFN6
Contextual Info: NCP1521 1.5 MHz, 600 mA, High−Efficiency, Low Quiescent Current, Adjustable Output Voltage Step−Down Converter http://onsemi.com The NCP1521 step−down PWM DC−DC converter is optimized for portable applications powered from one cell Li−ion or three cell

NCP1521

Abstract: NCP1521AMUTBG UDFN6 A108B A114 JESD22 NCP1521ASNT1G SMD package code MU switching regulator D3082-B01 L-11605
Contextual Info: NCP1521 1.5 MHz, 600 mA, High−Efficiency, Low Quiescent Current, Adjustable Output Voltage Step−Down Converter http://onsemi.com The NCP1521 step−down PWM DC−DC converter is optimized for portable applications powered from one cell Li−ion or three cell

IDT7006

Abstract: IO24 ACT-DP16K32A-035P12
Contextual Info: ACT-DP16K32A 512K Dual-Port SRAM Module Features Preliminary • High-density 512K CMOS Dual-Port SRAM module CIRCUIT TECHNOLOGY www.aeroflex.com ■ Fast access times Commercial: 30, 35ns Military: 40, 45ns MIL-PRF-38534 Compliant MCMs Available Fully asynchronous read/write operation from either port

IDT7006

Abstract: IO24
Contextual Info: ACT-DP16K32A 512K Dual-Port SRAM Module Features Preliminary • High-density 512K CMOS Dual-Port SRAM module CIRCUIT TECHNOLOGY www.aeroflex.com ■ Fast access times Commercial: 30, 35ns Military: 40, 45ns MIL-PRF-38534 Compliant MCMs Available Fully asynchronous read/write operation from either port

A108B

Abstract: A114 A115 JESD22 JESD78 NCP1522 NCP1522ASNT1G L-11605
Contextual Info: NCP1522 3.0 MHz, 600 mA, High−Efficiency, Low Quiescent Current, Adjustable Output Voltage Step−Down Converter The NCP1522 step−down PWM DC−DC converter is optimized for portable applications powered from one cell Li−ion or three cell Alkaline/NiCd/NiMH batteries. The device is available in an

GRM21BR60J106ME19L

Abstract: A108B A114 A115 JESD22 JESD78 NCP1522 NCP1522ASNT1G MIPW3226
Contextual Info: NCP1522 3.0 MHz, 600 mA, High−Efficiency, Low Quiescent Current, Adjustable Output Voltage Step−Down Converter The NCP1522 step−down PWM DC−DC converter is optimized for portable applications powered from one cell Li−ion or three cell Alkaline/NiCd/NiMH batteries. The device is available in an

Contextual Info: MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR-55L, -70L, -10L, -55LL,-70LL,-10LL 1048576-BIT 131072-WQRD BY 8-BITJCMOS STATIC RAM DESCRIPTION The M5M51008BP,FP,VP,RV,KV,KR are a 1048S76-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using high-performance triple poiysiiicon CMOS

NEC A39A

Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Contextual Info: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES