SMD TRANSISTOR Z1 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2N7002PT

Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002PT

Abstract: nxp marking code Z1 SC-75 marking code BV SMD Transistor transistor smd code marking nc
Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

UC3842 SMD

Abstract: smd transistor 5k PAE18K110Y1 flyback transformer design uc3842 uc3842 application 600V SMD Transistor 30w flyback uc3842 power supply universal power supply with uc3842 DIODE SMD 1206 philips make UC3842 step up converter
Contextual Info: PREMO S.A. Subject Universal 30W Power Supply, isolated, single output 12V/2.5 A Application Objective Industrial Applications Document ID NA-11 Date June 9th, 2004 Revision 1 PREMO S.A. Conxita Supervia 13, Barcelona (Spain) Tel: +34 93 409 89 80 Fax.: +34 93 330 75 02

RELAY RM2 TR1

Abstract: SMD Transistor z6 24v vogt transformer rm5 capacitor smd transistor z4 220n 400V capacitor MKT MKT 22K transistor smd z3 vogt T4 vogt t6
Contextual Info: Bill of Materials T-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32

capacitor 100N 63V 2u2

Abstract: capacitor mkt 100nf 400v vogt t6 RELAY RM2 TR1 MKT .22K CAP TAJA vogt T4 vac5024 t4 sot23 diode r60 mkt
Contextual Info: Bill of Materials Q-SMINTO Q/T SMINTO Evaluationboard Revised: Thursday, March 29, 2001 Top Sheet by R. Froese Revision: 1.0a Infineon Technologies AG COM A1 AE Balanstr. 73 - 81541 Munich - Germany Bill Of Materials Item March 29,2001 Quantity Reference 18:27:32

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

Contextual Info: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.

atmel 0720

Abstract: 3DC1515S ATAK5276-83 ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283
Contextual Info: LF Wake-up Demonstrator ATAK5276-83 1. General Description ATAK5276-83 is intended to demonstrate the performance of an LF wake-up channel needed for battery-driven systems. Typical wake-up applications can be found in vehicles for Tire Pressure Monitoring TPM .

Contextual Info: BLF8G19LS-170BV Power LDMOS transistor Rev. 2 — 28 March 2013 Product data sheet 1. Product profile 1.1 General description 170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.

SRW40EC2-E01

Contextual Info: UM0727 User manual IV E STEVAL-ISA018V1 demonstration board based on resonant half-bridge SMPS for industrial applications Introduction NA CT This user manual describes a high efficiency solution for industrial power supplies with a continuous output power of 150 W and peak power up to 240 W. It takes advantage of the

smd code HF transistor

Abstract: BLF3G21-6
Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

07N65

Abstract: fusible 1a SMD LN4148 10471 VARISTOR
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19

SMD Transistor Y12

Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
Contextual Info: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.

J122 SMD TRANSISTOR

Contextual Info: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Contextual Info: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Nordmende

Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
Contextual Info: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

150v varistor

Abstract: telephone line interface circuit bc517 c32725 dual transistor 6 pin SMD Z2 EMC SMD MICROPHONE pin configuration pnp smd transistor BC557 MPSA92 168 BC547 45V 100mA NPN Transistor QMPSA92 smd diode code 1_b
Contextual Info: sames AN1500A APPLICATION NOTE SINGLE CHIP TELEPHONE DEMO BOARD SA2532K 1 Scope This application note describes the use of the SA2532K Single Chip Telephone IC developed specifically to meet with India’s Department of Telecommunication DOT Specification for the Electronic Telephone Instruments. This

optocoupler IC PC817

Abstract: optocoupler PC817 SMD optocoupler IC PC817 P817 optocoupler 702 TRANSISTOR smd PC817 footprint PC817 optocoupler Self-Oscillating Flyback mosfet EE16 bobbin tl431 and pc817
Contextual Info: AN2228 APPLICATION NOTE STD1LNK60Z-based Cell Phone Battery Charger Design Introduction This application note is a Ringing Choke Converter RCC -based, step-by-step cell phone battery charger design procedure. The RCC is essential to the self-oscillating fly-back converter, and operates within the Discontinuous

transistor 502

Abstract: Rogers 4350B 4350B BLD6G21L-50 BLD6G21LS-50 Doherty amp doherty combiner 2110 transistor BLD6G22L-150BN/2 BLD6G22LS-50,112
Contextual Info: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 02 — 18 March 2010 Objective data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using

Contextual Info: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using

BLD6G22L-150BN/2

Abstract: BLD6G22L 4350B capacitor 82j 076MM BLD6G22L-150BN/BLD6G22L
Contextual Info: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using

smd JH transistor

Abstract: transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V