SMD TRANSISTOR SA Search Results

SMD transistor code NC

Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
Contextual Info: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

Contextual Info: PZT3904 _ / SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA

Contextual Info: PZT3906 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA

MARKING SMD PNP TRANSISTOR R

Abstract: MARKING SMD TRANSISTOR P SMD TRANSISTOR MARKING BE BE MARKING bvceo MARKING SMD PNP TRANSISTOR 2SB1260
Contextual Info: Transistors SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE sat . Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

transistor smd bh

Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD TRANSISTOR MARKING 2A

Abstract: MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD 1A TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type Low VCE sat Transistor 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

npn smd 2a

Abstract: smd transistor 2A smd 2a transistor 2SC4115 smd transistor 560
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SC4115 Features Low VCE sat :VCE(sat) = 0.2V (Typ.) IC / IB = 2A / 0.1A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage VCBO 40 V collector-emitter voltage

Contextual Info: • t.tS3^31 DDEbOOb fifl3 N AUER PHILIPS/DISCRETE APX PZT3906 b?E ]> J V. SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed primarily fo r high-speed, saturated switching applications in industrial service.

Contextual Info: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.

702 transistor smd code

Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872

BLT50

Abstract: ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA

2SB772 sot-89

Abstract: TRANSISTOR SMD sot-89 smd 2sd882
Contextual Info: Transistors SMD Type PNP Silicon Power Transistor 2SB772 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● PNP transistor High current output up to 3A 2.50±0.1 4.00±0.1 ● Low Saturation Voltage ● Complement to 2SD882 0.53±0.1 0.80±0.1

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
Contextual Info: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

2SC516

Abstract: transistor 23 Transistor SMD 028 npn smd 2a TRANSISTOR SMD 1a 9 2SC5161 SMD npn TRANSISTOR 1a 200v
Contextual Info: Transistors SMD Type High Voltage Switching Transistor 2SC5161 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Low VCE sat . 0.127 max NPN silicon transistor 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15

transistor smd marking CQ

Abstract: transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K
Contextual Info: Transistors SMD Type Medium Power Transistor 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE sat . Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1

Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

transistor smd marking KA

Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
Contextual Info: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

702 TRANSISTOR smd

Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

358 SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

smd tr1

Contextual Info: Transistors IC SMD Type General purpose transistor isolated transistor and diode FML9 • Features Unit: mm ● Tr1: Low VCE(sat) ● Di : Low VF 4 5 ● Small package (3) (2) (1) 1 Di2 (4) 2 3 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Tr1 Parameter

smd tr1

Contextual Info: Transistors SMD Type General purpose transistor isolated transistor and diode FML10 • Features Unit: mm ● Tr1: Low VCE(sat) ● Di : Low VF 4 5 ● Small package (3) (2) (1) 1 Di2 (4) 2 3 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Tr1 Symbol Rating