SMD TRANSISTOR MARKING C14 8 Search Results

PTF082001E

Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
Contextual Info: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest

LM7805 smd

Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

K934

Abstract: CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR
Contextual Info: K²950G/K²950GU DATA ACCESS ARRANGEMENT CHIPSET HIGH PERFORMANCE, LOW COST, ALL SILICON DAA DATA ACCESS ARRANGEMENT FOR US (FCC), CANADA (DOC), and JAPAN (JATE) APPLICATIONS FEATURES ♦ High performance for modems up to V.34/ 33.6Kbps and V.90/56Kbps ♦ Low power consumption: 20mW active,

smd transistor marking C14

Abstract: transistor smd marking ds BCP56 LM7805 PTF081301E PTF081301F
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

LM7805 M SMD

Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

PTF141501E

Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital

LM7805 smd 8 pin

Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
Contextual Info: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

smd transistor marking r14

Abstract: 0603 footprint IPC IHLP-2525CZ-ER-10R-M01 DIODE smd marking R12 smd diode marking 1P smd transistor marking 1p smd transistor marking D3 C3225X7R1E106MT CAPACITOR SMD smd transistor marking u1
Contextual Info: ISL8501EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8501 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8501 integrates

AN1332

Abstract: smd transistor marking C14 C5 MARKING smd transistor smd transistor marking 1p T DIODE smd marking R12 smd transistor pinout sot23 MARKING SMD transistor R11 smd transistor marking 1p smd transistor marking sp1 capacitor SM 1206 100uf 6.3V
Contextual Info: ISL8510EVAL1Z 1A Buck Regulator with Integrated MOSFETs Application Note The ISL8510 is a high-performance, triple output controller that provides a single, high frequency power solution for a variety of point of load applications. The ISL8510 integrates

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

MARKING SMD npn TRANSISTOR R45

Abstract: PMSM 200kw FSBB30CH60C smd transistor marking r14
Contextual Info: User Guide for FEBSPM3SPM45_M01MTCA Motion SPM3/45H Evaluation Board Compatible with: SPM3V2_V4 & SPM45H Modules Featured Fairchild Product: FNB41560 SPM45H SPM Direct questions or comments about this evaluation board to: “Worldwide Direct Support” /

B340 smd

Abstract: SC441A SMD diode B340 a94a transistor smd marking 431 PWM power switch TSSOP20 pcb smd transistor 805 239
Contextual Info: SC441A High Efficiency Integrated Driver for 4-Strings of 150mA LEDs POWER MANAGEMENT Features                Description Wide input voltage range from 4.5V to 21V 36V maximum output voltage Drives up to 40 WLEDs in 4 strings

Contextual Info: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

smd transistor marking j1

Contextual Info: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

TEA1703

Abstract: transistor smd marking m6
Contextual Info: UM10437 GreenChip 65 W TEA1738LT/T and TEA1703 demo board Rev. 1 — 28 February 2011 User manual Document information Info Content Keywords Notebook adapter, TEA1738LT/T, TEA1703, fixed frequency, ultra-low standby power, high-efficiency, slim line Abstract

USD1120 diode

Abstract: SmD TRANSISTOR a42 PIN CONFIGURATION IC RT 3060 smd diode marking jg U9D946 TRANSISTOR SMd jg data diode USD1120 USD1120
Contextual Info: UC1843-SP www.ti.com SLUS981 – MARCH 2010 QML CLASS V, CURRENT-MODE PWM CONTROLLER Check for Samples: UC1843-SP FEATURES 1 • • • • • • • • • • • • • • 1 QML-V Qualified, SMD 5962-86704 Rad-Tolerant: 50 kRad (Si) TID (ELDRS Free)

USD1120 ZENER

Abstract: USD1120 diode USD1120 U9D946 smd transistor marking zf
Contextual Info: UC1843-SP www.ti.com SLUS981 – MARCH 2010 QML CLASS V, CURRENT-MODE PWM CONTROLLER Check for Samples: UC1843-SP FEATURES 1 • • • • • • • • • • • • • • 1 QML-V Qualified, SMD 5962-86704 Rad-Tolerant: 50 kRad (Si) TID (ELDRS Free)

diode USD1120

Abstract: SmD TRANSISTOR jg
Contextual Info: UC1843-SP www.ti.com SLUS981 – MARCH 2010 QML CLASS V, CURRENT-MODE PWM CONTROLLER Check for Samples: UC1843-SP FEATURES 1 • • • • • • • • • • • • • • 1 QML-V Qualified, SMD 5962-86704 Rad-Tolerant: 50 kRad (Si) TID (ELDRS Free)

TRANSISTOR SMd jg data

Abstract: USD1120 ZENER USD1120 diode USD1120 SmD TRANSISTOR a42 UC1843-SP smd diode marking jg smd 2n2222 diode USD1120 zener diode 8.2 v smd 1w
Contextual Info: UC1843-SP www.ti.com SLUS981 – MARCH 2010 QML CLASS V, CURRENT-MODE PWM CONTROLLER Check for Samples: UC1843-SP FEATURES 1 • • • • • • • • • • • • • • 1 QML-V Qualified, SMD 5962-86704 Rad-Tolerant: 50 kRad (Si) TID (ELDRS Free)

smd transistor marking j6

Abstract: 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c
Contextual Info: ISL6227EVAL2Z Dual Switcher Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board dual switcher implementation. For information about the DDR application, please refer to Application Note 1067, “ISL6227EVAL1 DDR Evaluation

film capacitor 0.33uf/CTX x1

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

ST 0841

Abstract: ST 0721 0721 marking st 12089 MARKING code mf stmicroelectronics STMicroelectronics marking code 0721 J-STD-020B PD55003L-E PD55003LE TRANSISTOR SMD MARKING CODE 703
Contextual Info: PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 17dB gain@500 MHz/12.5 V ■ New leadless plastic package ■ ESD protection

Contextual Info: SA615 High performance low power mixer FM IF system Rev. 4 — 14 November 2014 Product data sheet 1. General description The SA615 is a high performance monolithic low-power FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,

Contextual Info: SA605 High performance low power mixer FM IF system Rev. 5 — 14 November 2014 Product data sheet 1. General description The SA605 is a high performance monolithic low-power FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,