SMD TRANSISTOR 715 Search Results

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

PBHV8540T

Abstract: PBHV9040T MARKING CODE SMD IC npn transistor w5 NXP TRANSISTOR SMD MARKING CODE SOT23
Contextual Info: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 13 February 2008 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

V9040Z

Abstract: PBHV9040Z PBHV8540Z SC-73 MARKING SMD IC CODE 10 pin
Contextual Info: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PBHV8540T

Abstract: PBHV9040T MARKING CODE SMD IC
Contextual Info: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

V9040Z

Abstract: SOT223 nxp packing PBHV8540Z PBHV9040Z SC-73 MARKING CODE SMD IC
Contextual Info: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 19 February 2008 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T8 9 PBHV9040X 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor 9 December 2013 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T8 83 PMZ370UNE 30 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 9 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 8 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: PMZB300XN 20 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: PMG45UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: PMZB380XN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

03AF6

Contextual Info: PMZB790SN 60 V, single N-channel Trench MOSFET 14 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 PMZ290UN 20 V, single N-channel Trench MOSFET 6 November 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless and ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

BUZ102

Abstract: smd transistor py
Contextual Info: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

Contextual Info: 83B PMZB670UPE SO T8 20 V, single P-channel Trench MOSFET Rev. 1 — 31 January 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET

BUZ111SL

Abstract: Q67040-S4003-A2 SPP80N05
Contextual Info: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code