SMD TRANSISTOR 5 LEAD Search Results

Contextual Info: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 1d

Abstract: SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code
Contextual Info: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.

2d SMD PNP TRANSISTOR

Abstract: 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d
Contextual Info: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.

NXP SMD TRANSISTOR MARKING CODE

Contextual Info: PBSS5560PA 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

PBSS4041PX

Abstract: MARKING SMD TRANSISTOR P TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD TRANSISTOR MARKING 6G
Contextual Info: PBSS4041PX 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T8 9 PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4041PX 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

PBLS4003D

Abstract: tsop6 marking 312
Contextual Info: PBLS4003D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

TRANSISTOR SMD MARKING CODE f6

Abstract: PBLS2001D
Contextual Info: PBLS2001D 20 V PNP BISS loadswitch Rev. 01 — 5 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

PBLS4001D

Contextual Info: PBLS4001D 40 V PNP BISS loadswitch Rev. 02 — 5 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

PBLS4002D

Contextual Info: PBLS4002D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBLS4001D

Contextual Info: PBLS4001D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBSS301ND

Abstract: PBSS301PD
Contextual Info: PBSS301ND 20 V, 4 A NPN low VCEsat BISS transistor Rev. 01 — 5 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD.

4350SPN

Abstract: PBSS4350SPN PBSS4350SS PBSS5350SS MARKING SMD PNP TRANSISTOR FR TRANSISTOR SMD MARKING CODE 42
Contextual Info: PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat BISS transistor Rev. 01 — 5 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

marking code 1s

Contextual Info: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: PMPB47XP 30 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: Transistors IC SMD Type TrenchMOSTM transistor Standard level FET KUK7605-30A 1 .2 7 -0+ 0.1.1 TO-263 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 0.1max +0.1 1.27-0.1 1 5 .2 5 -0+ 0.2.2 5 .6 0 +0.1 1.27-0.1

PBHV8115Z

Abstract: PBHV9115Z SC-73
Contextual Info: PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

MARKING CODE SMD IC

Abstract: PBHV8540T PBHV9040T IEC 62-50 code SMD W4 Transistor SOT23 marking codes SOT23 NXP power dissipation TO-236AB NXP TRANSISTOR SMD MARKING CODE SOT23
Contextual Info: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

KUK110-50GL

Contextual Info: Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK110-50GL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Vertical power DMOS output stage Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 5 V input level Low threshold voltage also allows 5 V control

l14 254

Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
Contextual Info: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The

transistor SMD 12E

Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

SMD 6PIN IC MARKING CODE

Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3