SMD TRANSISTOR 2 T Search Results

TRANSISTOR SMD CODE PACKAGE SOT89 4

Contextual Info: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:

transistor smd marking CQ

Abstract: transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K
Contextual Info: Transistors SMD Type Medium Power Transistor 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE sat . Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1

Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS

MARKING SMD TRANSISTOR DQ

Abstract: MARKING SMD TRANSISTOR DR SMD PNP TRANSISTOR MARKING SMD PNP TRANSISTOR 2PB1219A 2PB1219AQ 2PB1219AR 2PB1219AS smd transistor ds 65 smd transistor dr
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor 2PB1219A Features High current max. 500 mA Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating

marking C15

Abstract: smd MARKING c17 2sa1612 MARKING SMD PNP TRANSISTOR V5090 smd transistor marking c17
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA1612 Features High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -120 V Collector to emitter voltage VCEO -120

smd transistor GY

Abstract: smd marking GY smd GY marking gy VEBO-15V MARKING SMD NPN TRANSISTOR BR 2SC4413
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4413 Features Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

FZT458

Contextual Info: Transistors SMD Type NPN Silicon Planar High Voltage Transistor FZT458 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features 400 Volt VCEO +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1

BF822W

Contextual Info: Transistors SMD Type NPN High-Voltage Transistor BF822W Features Low current max. 50 mA High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V

smd transistor 2t1

Abstract: smd 2t1 2T1 SOT-23 KST9012 2t1 transistor MARKING SMD PNP TRANSISTOR 1301 smd L120H 2t1 TRANSISTOR smd
Contextual Info: IC Transistors SMD Type PNP Transistor KST9012 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Collector Current :IC=-0.5A +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent hFE liearity 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1

MARKING SMD PNP TRANSISTOR F8

Abstract: transistor f8 MARKING SMD PNP TRANSISTOR BF824W marking f8
Contextual Info: Transistors IC SMD Type PNP Medium Frequency Transistor BF824W Features Low current max. 25 mA . Low voltage (max. 30 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage

BSS138PW

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

2SC3837K

Abstract: NF marking TRANSISTOR SMD
Contextual Info: Transistors SMD Type Power Transistor 2SC3837K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Small rbb'.Cc and high gain. Typ. 6ps 1 0.55 High transition frequency. (Typ. fT = 1.5GHz) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base

MOSFET marking smd

Abstract: marking kp SMD TRANSISTOR MARKING 93 MOSFET smd marking mosfet vth 5v vth mos 2SK2033
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2033 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High input impedance. 0.4 3 1 0.55 Enhancement-Mode +0.1 1.3-0.1 +0.1 2.4-0.1 Low gate threshold voltage :Vth=0.5 to 1.5V 2 +0.1 0.95-0.1 +0.1 1.9-0.1

marking PP

Abstract: 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp
Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ213 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS on =4.2 MAX.@VGS=-1.0V,ID=-0.3A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1

transistor 2sc2412k

Abstract: smd transistor bq smd transistor bq 50 SMD TRANSISTOR MARKING BR 2SC2412K transistor 2sc.2412K 2SC2412K smd
Contextual Info: Transistors IC SMD Type General Purpose Transistor 2SC2412K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low Cob.Cob=2.0pF Typ. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

smd MARKING c17

Abstract: marking C15 2SA811A SMD 6v Transistor MARKING C16 SOT-23 smd transistor marking c17
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA811A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

NS-106

Abstract: 2SK3354 NS 106
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2

A1723

Abstract: smd transistor 26 KPA1716 40A19
Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1716 Features Low on-state resistance RDS on 1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP.

SMD TRANSISTOR MARKING Dd

Abstract: SMD TRANSISTOR MARKING DE MARKING SMD NPN TRANSISTOR BR SMD TRANSISTOR MARKING BR 2SD1419
Contextual Info: Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

BCF32

Abstract: NF marking TRANSISTOR SMD
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCF32 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 32 V . 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

transistor smd K2

Abstract: transistor smd marking k2 k2 smd transistor smd transistor k2 BCW71 BCW72 SMD TRANSISTOR MARKING k2
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCW71,BCW72 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1

AMS1117 3.3V

Abstract: AMS1117 3.3V circuit diagram AMS1117 AMS1117-ADJ smd ams1117 AMS1117 REGULATOR AMS1117-3.3 AMS1117-3.3 1A Low Dropout Voltage Regulator AMS1117 3.3V SOT-223 AMS1117 5V circuit diagram ams1117 adj
Contextual Info: Integrate Circuit IC SMD Type 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator AMS1117 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features 1.4V maximum dropout at full load current +0.1 3.00-0.1 Fast transient response +0.15 1.65-0.15 +0.2 3.50-0.2

SMD TRANSISTOR MARKING BR

Abstract: 2SC5209 marking RH
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO

TRANSISTOR SMD 1a 9

Abstract: 2SB1275 50MHZ
Contextual Info: Transistors SMD Type Power Transistor 2SB1275 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High transition frequency. fT = 50MHZ +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1