SMD TRANSISTOR 1Y Search Results
SMD TRANSISTOR 1Y Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
| BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
| BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
| BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN | |||
| BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
SMD TRANSISTOR 1Y Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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power amplifier 3000W with PCB
Abstract: 3000w audio amplifier 500w car audio amplifier circuit diagram schematic Class D 1KW RMS audio amplifier 12v 1200W AUDIO AMPLIFIER IRFB4227 1200w power amplifier circuit diagram 12v 600W car AUDIO AMPLIFIER CIRCUIT DIAGRAM 3000w inverter circuit diagram 3000w transistor audio amplifier circuit diagram
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IRS2092S IRFB4227 power amplifier 3000W with PCB 3000w audio amplifier 500w car audio amplifier circuit diagram schematic Class D 1KW RMS audio amplifier 12v 1200W AUDIO AMPLIFIER IRFB4227 1200w power amplifier circuit diagram 12v 600W car AUDIO AMPLIFIER CIRCUIT DIAGRAM 3000w inverter circuit diagram 3000w transistor audio amplifier circuit diagram | |
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Contextual Info: ACS157MS Semiconductor Radiation Hardened Quad 2-Input Non-Inverting Multiplexer December 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS157MS is a Quad 2-Channel Non-Inverting Multiplexer which selects four bits of data from |
OCR Scan |
ACS157MS MIL-PRF-38535 ACS157MS 25Micron 2390nm 2390nm 525nm | |
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Contextual Info: ACS139MS HARRIS S E M I C O N D U C T O R Radiation Hardened Dual 2-to-4 Line D ecoder/D em ultiplexer November 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS139MS contains two indepen dent binary to one-of-four decoders, each with a single active |
OCR Scan |
ACS139MS MIL-PRF-38535 ACS139MS 25Micron | |
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Contextual Info: ACS253MS S MAEESS Radiation Hardened Dual 4-Input Multiplexer with Three-State Outputs November 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS253MS is a Dual 4-Channel Mul tiplexer having two common binary control inputs for selecting 1 |
OCR Scan |
ACS253MS MIL-PRF-38535 ACS253MS 25Micron | |
TIL116
Abstract: TIL111 E91231 TIL111X TIL114 TIL114X TIL116X TIL117 TIL117X
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TIL111X, TIL114X, TIL116X, TIL117X TIL111, TIL114, TIL116, TIL117 E91231 TIL111X TIL116 TIL111 E91231 TIL114 TIL114X TIL116X TIL117 TIL117X | |
5962F9860101V9A
Abstract: 5962F9860101VCC 5962F9860101VXC ACS02DMSR-03 ACS02MS
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ACS02MS ACS02MS MIL-PRF-38535 5962F9860101V9A 5962F9860101VCC 5962F9860101VXC ACS02DMSR-03 | |
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Contextual Info: ISP817-32 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 Package Code EE 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD l 2.54 1 2 7.0 6.0 4 3 1.2 - G form - SMD approved to CECC 00802 |
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ISP817-32 E91231 EN60950 P96102022 ISP817-32 DC93092 | |
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Contextual Info: ACS02MS Semiconductor Data Sheet November 1998 File Num ber Radiation Hardened Quad 2-Input NOR Gate Features The Radiation Hardened ACS02MS is a Quad 2-Input NOR Gate. For each gate, a HIGH level on either A or B input results in a LOW level on the Y output. A LOW level on both |
OCR Scan |
ACS02MS ACS02MS MIL-PRF-38535 1-800-4-HARRIS | |
smd transistor 2a3
Abstract: Transistor SMD Y1 y1 smd transistor smd transistor y1 smd transistor 2A1 y2 smd transistor transistor smd Y2 smd 1a2 diagram of ic 1a2 HCTS244KTR
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HCTS244T 100kRAD HCTS244T smd transistor 2a3 Transistor SMD Y1 y1 smd transistor smd transistor y1 smd transistor 2A1 y2 smd transistor transistor smd Y2 smd 1a2 diagram of ic 1a2 HCTS244KTR | |
E91231
Abstract: H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4 H11A4X H11A5
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H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 E91231 H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4 H11A4X H11A5 | |
E91231
Abstract: MCT2E applications IC 1 MCT2E
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E91231 EN60950 P01102465 FI18162 DB92279m-AAS/A2 E91231 MCT2E applications IC 1 MCT2E | |
4N38
Abstract: 4N38A 4N38X E91231 8001L
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4N38X, 4N38AX 4N38A E91231 EN60950 P01102464 FI18166 4N38A DB90047m-AAS/A2 4N38 4N38X E91231 8001L | |
CNX72A
Abstract: CNX72AX E91231
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CNX72AX CNX72A E91231 EN60950 P96101299 CNX72A DB92235m-AAS/A1 CNX72AX E91231 | |
E91231
Abstract: IS201-63 IS201X63
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IS201-63 IS201X63 E91231 EN60950 P96101299 IS201-63 DB92521-AAS/A1 E91231 IS201X63 | |
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Contextual Info: Transistors SMD Type Product specification BF821,BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage max. 300 V . 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 |
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BF821 BF823 OT-23 BF821 | |
smd diode SM 97
Abstract: E91231 IS205-1 IS205-2 IS205-3 IS205X3
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IS205X3 IS205-3 E91231 EN60950 P96101299 DB90029-AAS/A2 smd diode SM 97 E91231 IS205-1 IS205-2 | |
A1712Contextual Info: IS205X, IS206X IS205, IS206 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following |
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IS205X, IS206X IS205, IS206 E91231 EN60950 P96101299 IS206 DB92011m-AAS/A1 A1712 | |
smd transistor A1 3 PIN
Abstract: E91231 MOC8111 MOC8111X MOC8112 MOC8112X MOC8113 MOC8113X
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MOC8111X MOC8112X MOC8113X MOC8111, MOC8112, MOC8113 E91231 EN60950 smd transistor A1 3 PIN E91231 MOC8111 MOC8112 MOC8113 MOC8113X | |
E91231
Abstract: IS205 IS205X IS206 IS206X
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IS205X, IS206X IS205, IS206 E91231 EN60950 P96101299 IS206 DB92011m-AAS/A1 E91231 IS205 IS205X IS206X | |
4N37
Abstract: 4N37X E91231 4N35 4N35X 4N36 4N36X 4n35 214
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4N35X, 4N36X, 4N37X, E91231 EN60950 DB90046M-AAS/A1 4N37 4N37X E91231 4N35 4N35X 4N36 4N36X 4n35 214 | |
SMD 6 PIN IC
Abstract: h11av2 equivalent E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X
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H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 E91231 EN60950 P96101299 H11AV SMD 6 PIN IC h11av2 equivalent E91231 H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X | |
smd transistor A1
Abstract: photo-transistor 4N38 4N38A 4N38X E91231
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4N38X, 4N38AX 4N38A E91231 EN60950 P96101299 4N38A DB90047m-AAS/A1 smd transistor A1 photo-transistor 4N38 4N38X E91231 | |
moc8103
Abstract: E91231 MOC8106 MOC8106X MOC8107 MOC8107X MOC8108 MOC8108X
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MOC8106X MOC8107X MOC8108X, MOC8106, MOC8107, MOC8108 E91231 EN60950 P96101299 moc8103 E91231 MOC8106 MOC8107 MOC8108 MOC8108X | |
MCT2E characteristics
Abstract: E91231 IC 1 MCT2E
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E91231 EN60950 P96101299 DB92279m-AAS/A1 MCT2E characteristics E91231 IC 1 MCT2E | |