SMD MOSFET 400V Search Results

IRHNB7360SE

Contextual Info: PD - 91740B IRHNB7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7360SE

Contextual Info: PD - 91398A IRHNA7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7360SE

Contextual Info: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRFN340

Abstract: JANTX2N7221U JANTXV2N7221U mosfet 60a 200v
Contextual Info: PD - 91550C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN340 JANTX2N7221U JANTXV2N7221U REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International

MIL-PRF-19500/592

Abstract: IRFN350 JANTX2N7227U JANTXV2N7227U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD - 91551C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

MIL-PRF-19500/592

Abstract: MOSFET 150 N IRF IRFN350 JANTX2N7227U JANTXV2N7227U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD-91551D POWER MOSFET SURFACE MOUNT SMD-1 IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

Contextual Info: PD-91550D POWER MOSFET SURFACE MOUNT SMD-1 IRFN340 JANTX2N7221U JANTXV2N7221U REF:MIL-PRF-19500/596 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International

IRHNA7460SE

Abstract: HEXFET Power MOSFET SMD2
Contextual Info: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7460SE

Contextual Info: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

400V to 12V DC Regulator

Abstract: IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh
Contextual Info: PD - 91741A IRHNB7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET

IRFNG50

Abstract: mosfet 10a 800v high power 91556A
Contextual Info: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

SMD TRANSISTOR 12a

Abstract: IRFN450 JANTX2N7228U JANTXV2N7228U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD - 90418C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International

IRFN440

Abstract: JANTX2N7222U JANTXV2N7222U
Contextual Info: PD - 91552C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN440 JANTX2N7222U JANTXV2N7222U REF:MIL-PRF-19500/596 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 Ω 8.0A HEXFET® MOSFET technology is the key to International

KDB15N50

Abstract: IC MOSFET QG SMPS MOSFET n-channel 250V power mosfet smd MOSFET 500V 15A N channel Mosfet 15A 500V n-channel 250V power mosfet FDB15N50 smd mosfet 400v
Contextual Info: MOSFET SMD Type N-Channel SMPS Power MOSFET KDB15N50 FDB15N50 Features TO-263 Unit: mm +0.1 1.27-0.1 Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt +0.1 1.27-0.1 +0.2 4.57-0.2 Ruggedness Reduced Miller Capacitance and Low Input Capacitance

IRHNJ7330SE

Abstract: JANSR2N7465U3
Contextual Info: PD - 93829A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ7330SE JANSR2N7465U3 400V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ7330SE 100K Rads (Si) RDS(on) ID QPL Part Number

12v dc motor IG 2200 53

Abstract: IRHNJ7330SE
Contextual Info: PD - 93829 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ7330SE JANSR2N7465U3 400V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ7330SE 100K Rads (Si) RDS(on) ID QPL Part Number

SMD DIODE 200A

Abstract: Diode smd 86 SMD diode NC 200a smd MOSFET 400 A smd mosfet 400v 58nC TR2050 diode LMP KQS4901
Contextual Info: IC IC SMD Type 400V Dual N-Channel MOSFET KQS4901 Features 0.45 A, 400 V. RDS ON = 4.2 @ VGS = 10 V Low gate charge (typical 5.8nC) Low Crss (typical 5.0 Pf) Fast switching speed lmproved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage

Contextual Info: Transistors IC SMD Type 400V N-Channel MOSFET KQB3N40 TO-263 Features @ VGS = 10 V 1 .2 7 -0+ 0.1.1 2.5A, 400 V. RDS ON = 3.4 Low gate charge (typical 6.0nC) Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54

400v p-channel mosfet

Abstract: P-Channel mosfet 400v KQB4P40
Contextual Info: Transistors IC SMD Type 400V P-Channel MOSFET KQB4P40 1 .2 7 -0+ 0.1.1 TO-263 Features 3.5A, -400V, RDS on = 3.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 @VGS = -10 V 5 .2 8 -0+ 0.2.2 100% avalanche tested Improved dv/dt capability 0.1max +0.1 1.27-0.1 Fast switching

IRHNJ7430SE

Abstract: JANSR2N7466U3
Contextual Info: PD - 93830B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ7430SE JANSR2N7466U3 500V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNJ7430SE Radiation Level 100K Rads (Si) RDS(on) 1.77Ω ID

f 676

Contextual Info: PD - 93830 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ7430SE JANSR2N7466U3 500V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNJ7430SE Radiation Level 100K Rads (Si) RDS(on) 1.6Ω ID QPL Part Number

ld smd transistor

Abstract: KRFR9310
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRFR9310 TO-252 Features Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.8 0.50-0.7 P-Channel 0.127 max 2.3 Fully Avalanche Rated +0.28 1.50-0.1 Avanced Process Technology +0.1 0.60-0.1 +0.15

2SK3668

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3668 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. VGS = 10 V, ID = 5.0 A 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.55 Surface mount package available +0.2 2.54-0.2

2SK3305

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3305 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on = 1.5 MAX. (VGS = 10 V, ID = 2.5A) Avalanche capability ratings +0.2 2.54-0.2