SMD MARKING A16 Search Results

smd transistor a9

Abstract: a15 SMD A19 SMD smd marking A5 10 35L A16 SMD SMD A18 Transistor SMD a7 Transistor smd diode a5 MT5C1001
Contextual Info: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •

Contextual Info: SRAM AS5C4008 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATION 32-Pin DIP (CW), 32-Pin LCC (EC) 32-Pin SOJ (ECJ) • SMD 5962-95600 • MIL STD-883 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1

Contextual Info: SRAM AS5C4008 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATION 32-Pin DIP (CW), 32-Pin LCC (EC) 32-Pin SOJ (ECJ) • SMD 5962-95600 • MIL STD-883 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1

AS5C4008CW

Contextual Info: SRAM AS5C4008 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATION 32-Pin DIP (CW), 32-Pin LCC (EC) 32-Pin SOJ (ECJ) • SMD 5962-95600 • SMD 5962-95613 • MIL STD-883 A18 A16 A14 A12 A7

Flash

Abstract: AS29F040
Contextual Info: FLASH AS29F040 512K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2

SMD MARKING A16

Contextual Info: SRAM MT5C2561 256K x 1 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) A6 A7 A8 A9 A10 A11 A14 A15 A0 Q WE\ Vss FEATURES • • • • High Speed: 35, 45, 55, and 70

smd a17

Abstract: A16 SMD SMD a7 Transistor smd marking A8 smd transistor a4 smd transistor A7 smd transistor marking A5 MT5C2561 SMD a7 S
Contextual Info: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) A6 A7 A8 A9 A10 A11 A14 A15 A0 Q WE\ Vss

Contextual Info: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A8 A7 A6 Vcc A17 SRAM MEMORY ARRAY 3 2 1 28 27

Contextual Info: EEPROM AS8E512K8 512K x 8 EEPROM PIN ASSIGNMENT EEPROM Module Top View AVAILABLE AS MILITARY SPECIFICATIONS • • 32-Pin DIP & 32-Pin SOJ (CW) SMD 5962-93091 MIL-STD-883 FEATURES • • • • • • • • Access times of 150, 200, 250, and 300 ns

smd marking g8

Contextual Info: Standard Products RadHard Eclipse FPGA Family 6250 and 6325 Advanced Data Sheet June 16, 2006 www.aeroflex.com/RadHardFPGA FEATURES ‰ Comprehensive design tools include high quality Verilog/ VHDL synthesis and simulation ‰ QuickLogic IP available for microcontrollers, DRAM

HIGHWAY 09a 16 PIN DIAGRAM

Contextual Info: REVISIONS LTR A DESCRIPTION Changes in accordance with NOR 5962-R124-95. DATE YR-MO-DA 95-04-28 APPROVED Monica L. Poelking B Changes in accordance with NOR 5962-R003-96. 95-10-13 Monica L. Poelking C Add device type 03. Update boiler plate. Editorial changes throughout.

TDC1001

Abstract: 74LS04 ttl 1001b8c TDC1025 Marking A103 low noise TMC12441 SMD CAPACITOR CODE b7 SMD marking A67 LS161 TDC1038
Contextual Info: A /D Converters T R in i TRW offers a line o f high performance A /D converters that addresses applications from 50kHz to 100MHz. For video bandwidths on the order o f 10MHz , w e have converters with resolutions o f 4 to 10 bits and conversion rates from 18Msps to lOOMsps. W e pioneered the monolithic video A /D converter in 1977,

MG80C286-10/B

Abstract: MQ80C286-10 QML-38535 MG80C286-10/883 MQ80C286-10/B 80C286-10 80C286-12 MG80C mg80c286
Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 18 19 20 21

512K32

Abstract: 9Q512K32 UT9Q512 UT9Q512K32
Contextual Info: Standard Products UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet January 15, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

5962-XXXXXZZ

Abstract: QML-38534 qml-38535
Contextual Info: REVISIONS DESCRIPTION LTR DATE 93-04-15 Added device types 02, 03, and 04. Made changes to tables I and II._ APPROVED YR-MO-DA K. Cottongim REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE

w18 SMD

Abstract: W18 SMD MARKING CODE INTEL flash part MARKING marking code micron label cub smd Flash Controller Micron micron part marking decoder
Contextual Info: 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A ADVANCE‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

Contextual Info: Standard Products UT8R512_8 512K x 8 SRAM Advanced Data Sheet October 30, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Preliminary Data Sheet September 21, 2001 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT9Q512 512K x 8 SRAM Preliminary Data Sheet December 17, 2001 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet March 25, 2002 FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus

marking code micron label

Abstract: INTEL flash part MARKING
Contextual Info: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C128516W18/W30D PREVIEW‡‡ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

INFINEON "part marking"

Abstract: marking code micron label
Contextual Info: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30E MT28C128564W18/W30E Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA Stacked die Combo package • Includes two 64Mb Flash devices

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet July 30, 1999 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

UT8R128

Contextual Info: Standard Products UT8R128K32 128K x 32 SRAM Data Sheet November, 2005 www.aeroflex.com/4MSRAM INTRODUCTION FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 128K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state