SMD JH TRANSISTOR Search Results

250 B 340 smd Transistor

Abstract: smd JH transistor BLA0912-250 T491D476M020AS
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

T491D226M020AS

Abstract: T491D476M020AS smd JH transistor
Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 2 — 15 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

smd JH transistor

Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

smd JH transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF1043 UHF power LDMOS transistor Preliminary specification 2002 Jul 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1043 FEATURES PINNING - SOT538A • Easy power control PIN DESCRIPTION

smd JH transistor

Abstract: transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 FEATURES PINNING - SOT538A • Typical 2-tone performance at a supply voltage of 26 V

NV SMD TRANSISTOR

Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

transistor buz 104

Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package

BUZ102

Abstract: smd transistor py
Contextual Info: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code

transistor SMD t70

Abstract: BUZ104
Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V

BUZ 21 SMD

Contextual Info: SIEMENS BUZ 103 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-22O SMD available Type Vfcs b ^% S on) Package Ordering Code BUZ 103 50 V

Contextual Info: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on

rf transistor mar 8

Abstract: CBD46 BLF1043 MAR 749 smd JH transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Preliminary specification 2002 Mar 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • High power gain

BUZ100

Contextual Info: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A

T491D476M020AS

Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain

DB16

Abstract: 34S2
Contextual Info: BLF1043 UHF power LDMOS transistor Rev. 8 — 6 May 2013 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 May 17 2002 Jul 04 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 PINNING - SOT502A

BLF2022-70

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Nov 27 2002 May 17 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 PINNING - SOT502A

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^D S o n Package Ordering Code BUZ 20 100 V 13.5 A 0.2 n TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Values Symbol Continuous drain current Unit A b 13.5

smd transistor A15 HB

Abstract: PHILIPS 433003036301 smd TRANSISTOR 1702 37281 2222-581 BLF2045
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 2000 Jan 04 Philips Semiconductors 2000 Feb 17 PHILIPS Philips Semiconductors Product specification UHF power LDMOS transistor BLF2045 FEATURES PINNING - SOT467C • High power gain PIN DESCRIPTION

C67078-S1355-A2

Abstract: BUZ 32 SMD
Contextual Info: BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS on

BSP320

Abstract: 320S BSP320S Q67000-S4001 VPS05163
Contextual Info: BSP 320S SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 60 V RDS on 0.12 Ω ID 2.9 A • dv/dt rated 4 3