SMD IC MARKING AE Search Results

st smt ic marking code

Abstract: 1740194-2
Contextual Info: RELEASED FOR PUBLICATION 2004 DEL FREI TYCO ELECTRONICS FUER V E R Ö F F E N T L I C H U N G AL L RIGHTS RESERVED. CORPORATION. AI I F RFTHTF ^ATED WI TH: F A S S E N D ZU: LOC RE V I S I O N S D I ST AENDERUNGEN A VTIRRFHAI T F N . P EGGMN03028 A N S IC H T ZE IG T 15 POL. STECKER

amp TYCO sub-d

Abstract: subd Sub-D 25-pol
Contextual Info: R E LE A S ED FOR P U B LIC A TIO N DEL 2004 ^ATED WITH: F A S S E N D ZU: FREI BY C O P Y R I G FIT 2 0 0 4 TYCO ELEC TR O N IC S FUER V E R Ö F F E N T L I C H U N G ALL RIGHTS R ESER VED . CORPORATIO N. LOC D IST REV IS I O N S AENDERUNGEN AI I F R FT H TF VTIRRFHAI T F N .

Contextual Info: BY C O P Y R I G FIT 20 04 TYCO ELECTRONICS R ELE A S E D FOR P U B LIC A T IO N FREI FUER V E R Ö F F E N T L I C H U N G CORPORATION. ALL RIGHTS RESERVED. AI I F RFTHTF VTIRRFHAI TFN. DEL 20 0 4 ^ATED WITH: F A S S E N D Z U: LOC REV IS IO N S D I ST AENDERUNGEN

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

520301006R

Abstract: 2N5154RESYHRG
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

NXP date code marking

Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

JESD22 Method Jb-100

Abstract: JIS-C-6429 ISO-7637-1
Contextual Info: Metal Oxide Varistor for Automotive： ：TVM-C Series SMD Type for Transient Overvoltage Protection Features 1. Qualification based on AEC-Q200 Rev-C 2. High surge suppress capability for automotive application load dump 3. No temperature derating up to 125 °C

ISO-7637-1

Abstract: ISO7637-1 TVM4C160K242 JESD22 Method Jb-100 metal oxide varistor airbag JB-100
Contextual Info: Metal Oxide Varistor for Automotive： ：TVM-C Series SMD Type for Transient Overvoltage Protection Features 1. Qualification based on AEC-Q200 Rev-C 2. High surge suppress capability for automotive application load dump 3. No temperature derating up to 125 °C

marking PS

Contextual Info: Power erStor PRELIMINARY Aerogel Capacitors S Series Description The PowerStor Aerogel Capacitor is a unique, ultra-high capacitance device based on a novel type of carbon foam, known as carbon aerogel. Aerogel capacitors are similar to supercapacitors, ultracapacitors and electrochemical double

5962-7802301MEX

Abstract: 5962-7802301MFX 5962-7802301M2X qml-38535 smd marking 6z 26f31 smd marking code 6z 7802301EX
Contextual Info: AMO ¿I NOTICE OF REVISION NOR (See MIL-STD-480 fo r instru ctio n s) Th's re visio n aescriseo aelaw ras seen autnor'zea fa r tre ascunent ''s te o . DATE ( vYMP00i 31/11/22 conn AccrcvBO 0MB No. :704-0188 Public re so rtin g Buraen fo r th is c o lle c tio n Is estimated to average 1 hour cer -esponse. inclu d in g tne time fo r reviewing

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: Transistors IC SMD Type Product specification BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage BCX51 Symbol Rating Unit VCBO -45 V BCX52

BCX53

Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
Contextual Info: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

transistor smd ba rn

Abstract: LM7805 smd 8 pin transistor smd marking 431 transistor smd code marking 431 LM7805 M SMD lm7805 so8 LM7805 acm SMD Transistor 431 ac transistor 431 smd transistor smd marking ND
Contextual Info: Semiconductor LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized pack­

SMD iC MARKING AE

Abstract: 2SA1419 ae marking
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage

Contextual Info: SMD Type Product specification 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO

Contextual Info: O O N M P T PF T Slow blow FuSeS DeScRiPtion T PF SS T PF SS T FuSe aPPlicationS FeatuReS H I C W C C R W S E E P R HS REACH C H F M L T MIL STD M A H B MIL STD M M R T MIL STD M T S MIL STD M G T S T AEC Q A V MIL STD M D M S MIL STD M B S ANSI J STD R S

Contextual Info: O O N M P T PF T HIGH INRUSH FUSeS DeScRIPtIoN T PF HS T PF FS T FUSe aPPlIcatIoNS FeatUReS H I C W C C R W S E E P R HS REACH C H F M L T MIL STD M A H B MIL STD M M R T MIL STD M T S MIL STD M G T S T AEC Q A B F AEC Q A M V MIL STD M D M S MIL STD M B S

5962F8776003VXA

Abstract: 5962F8762401VXA 5962F8762403VXC RHFAC2525K02V RHFAC14AK1
Contextual Info: 54ACxxxx, 54ACTxxxx Rad-hard advanced high-speed 5 V CMOS logic series Data brief Features • AC: 2 to 6 V operating voltage • ACT: 4.5 to 5.5 V operating voltage • High speed TPD = 4.5 ns typ. • Low DC power dissipation: 8 µA max. Flat-14 • Symmetrical 24 mA output characteristics

Contextual Info: O O N M P T PF T FaSt acting chiP FuSeS DeScRiPtion T PF FS T PF FS T FuSe aPPlicationS FeatuReS F A E C C R W S E E P R HS REACH C H F M L T MIL STD M A H B MIL STD M M R T MIL STD M T S MIL STD M G B F AEC Q A M V MIL STD M D M S MIL STD M B S MIL STD M

lm358 current monitor

Abstract: LM258 LM2904 lm358 smd LM358 IN COMPARATOR CIRCUIT LM158 national lm358 pin diagram LM358 comparator ic LM358 oscillator LM358
Contextual Info: LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single

LM2904

Abstract: lm358 smd LM358 IC OP AMP LM358N LM158 national lm358 current monitor LM258 LM158 lm2904n lm358 sum
Contextual Info: LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single