SMD DIODE MARKING UM Search Results

JPP-95

Abstract: t3.15A/250V optocoupler 356T TEA1733 smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
Contextual Info: UM10385 GreenChip 65 W TEA1733 L T demo board Rev. 02 — 2 June 2010 User manual Document information Info Content Keywords Notebook adapter, TEA1733(L)T, Low standby power, High efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics, and Printed-Circuit

Contextual Info: UM10421 GreenChip 65 W TEA1733LT/T printer reference board Rev. 1 — 17 December 2010 User manual Document information Info Content Keywords Printer adapter, TEA1733LT/T, low standby power, high-efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics and Printed-Circuit

smd JS

Abstract: smd transistor js smd diode marking ja smd diode JS diode DIODE 630 DIODE JS diode marking ja DIODE SMD 55 ja smd
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT62-07W SOT-343 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Symbol Value Unit Diode reverse voltage Parameter VR 40 V Forward current IF 20 mA P tot 100

smd JS

Abstract: smd diode marking ja diode js smd transistor js 650 DIODE k 650 smd diode JS smd diode nh BAT62 ja smd
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT62 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 40 V Reverse voltage Forward current Total power dissipation, T S 85 Junction tem perature

smd diode UM 07

Abstract: diode IR switch SILICON SWITCHING DIODE BAR65-07 smd rf transistor marking pindiode switch smd diode UM 09 smd diode UM 08
Contextual Info: Diodes SMD Type Silicon RF Switching Diode BAR65-07 Unit: mm Features Low loss, low capacitance PIN-Diode Band switch for TV-tuners Series diode for mobile communications transmit-receive switch Unconnected pair Absolute M axim um R atings T a = 25 P aram eter

smd JS

Abstract: smd JS 3 diode smd transistor js DIODE JS marking bbs diode sot 100 mA diode diode ja smd marking SOT343 smd diode marking ja
Contextual Info: Diodes SMD Type Silicon RF Switching Diode BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100

smd diode marking Av

Abstract: 54s diode BAT17-05W "BAT17" marking 1AV BAT17-04W BAT17-06W BAT17-04 1AV marking
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT17-04W,BAT17-05W,BAT17-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Sym bol Value Unit VR 4 V IF 130

318 MARKING DIODE

Abstract: smd rf transistor marking BAT68-04W BAT68-05W BAT68-06W bat68
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT68-04W,BAT68-05W,BAT68-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current

smd diode UM

Abstract: SMD 3E marking 3e smd diode marking um "Schottky Barrier Diode" Schottky RB717F
Contextual Info: Diodes SMD Type Schottky barrier diode RB717F Features Small mold type. UMD3 High reliability. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Lim its Unit V RM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current * IO 30 mA I FSM 200

3D smd marking

Abstract: smd diode UM smd diode marking um SHOTTKY diode SMD marking 3D smd marking 3d SHOTTKY DIODE SMD MARKING 3D SMD 3D diode shottky
Contextual Info: Diodes SMD Type Shottky barrier diode RB715F Features Small mold type. UMD3 High reliability. Absolute Maxim um Ratings Ta = 25 Param eter Reverse voltage (repetitive peak) Sym bol Lim its Unit V RM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current

smd diode marking 47s

Abstract: transistor marking 47s smd diode marking 1P smd marking 47s diode K 345 Schottky Diode smd rf transistor marking BAS40-07W diode 345
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage

TEA1703

Abstract: transistor smd marking m6
Contextual Info: UM10437 GreenChip 65 W TEA1738LT/T and TEA1703 demo board Rev. 1 — 28 February 2011 User manual Document information Info Content Keywords Notebook adapter, TEA1738LT/T, TEA1703, fixed frequency, ultra-low standby power, high-efficiency, slim line Abstract

smd JS

Abstract: smd marking S9 BAT14-099 smd JS 5 marking s9 DIODE JS smd transistor js BAT14 bat14-099 data sheet smd rf transistor marking
Contextual Info: Diodes SMD Type Silicon Dual Schottky Diode BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55

sym 435

Abstract: smd rf transistor marking BAT68W smd diode UM 65 A
Contextual Info: Diodes SMD Type Silicon Schottky Diodes BAT68W Features For mixer applications in the VHF/UHF range For high speed switching Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current IF 150 mA P tot 150 mW

BAT68-03W

Abstract: 318 MARKING DIODE
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT68-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features For mixer applications in the VHF/UHF range +0.1 2.6-0.1 1.0max For high speed switching 0.375 +0.05 0.1-0.02 0.475 Absolute M axim um R atings Ta = 25

BAS125

Abstract: SMD DIODE MARKING 14s BAS125-04W BAS125-05W BAS125-06W BAS125W
Contextual Info: Diodes SMD Type Silicon Schottky Diodes BAS125W;BAS125-04W BAS125-05W;BAS125-06W Features For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Absolute Maxim um Ratings Ta = 25

RB501V-40

Contextual Info: Diodes SMD Type Schottky barrier diode RB501V-40 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small surface mounting type. UMD2 +0.1 2.6-0.1 1.0max Low VF.(VF = 0.43V Typ.at 100mA) High reliability. 0.375 +0.05 0.1-0.02

RB751V-40

Contextual Info: Diodes SMD Type Schottky barrier diode RB751V-40 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small surface mounting type. EMD2,UMD2 +0.1 2.6-0.1 1.0max Low reverse current and low forward voltage. High reliability. 0.375

1SS380

Contextual Info: Diodes SMD Type SWITCHING DIODE 1SS380 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Ultra small mold type. UMD2 +0.1 2.6-0.1 1.0max High reliability. 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Paremeter

Contextual Info: Diodes SMD Type Silicon RF Switching Diodes BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR

SMD MARKING P3

Abstract: transistor marking p3 marking p3 smd rf transistor marking HVU133 marking SMD P3
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVU133 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low capacitance. C=1.0pF max +0.1 2.6-0.1 Low forward resistance. (rf=0.7 1.0max max) 0.375 +0.05 0.1-0.02 0.475 A bsolute M axim um R atings T a = 25

smd marking 35

Abstract: 1SS378 smd diode UM smd diode marking um smd diode UM 85
Contextual Info: Diodes SMD Type HIGH SWITCHING DIODE 1SS378 Features Low forward voltage:VF 3 = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current

RB520S-30

Contextual Info: Diodes SMD Type Schottky barrier diode RB520S-30 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Ultra Small mold type. EMD2 + +0.1 0.6-0.1 - Low IR. High reliability. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25

Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING DIODE 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current