SMD DIODE MARKING CODE G Search Results

smd diode code WP

Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Contextual Info: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

BB181

Contextual Info: BB181 VHF variable capacitance diode Rev. 03 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 SC-79 ultra small plastic SMD package.

l04a SMD

Abstract: L03A l03a smd TRANSISTOR SMD MARKING CODE L03A L0DA LP2981IM5-5.0 L05A L05B L77A L77B
Contextual Info: LP2981 Micropower 100 mA Ultra Low-Dropout Regulator in SOT-23 and micro SMD Packages General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2981 delivers unequaled performance in all

l58a

Abstract: lp2982 MF05A l76a smd smd transistor marking n 3 package 23
Contextual Info: LP2982 Micropower 50 mA Ultra Low-Dropout Regulator in SOT-23 and micro SMD Packages General Description Features The LP2982 is a 50 mA, fixed-output voltage regulator designed to provide ultra low dropout and lower noise in battery powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2982 delivers unequaled performance in all

smd diode code SL

Abstract: Diode smd s6 46 160-0055X1 SMD MARKING g4
Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol

smd diode marking code 2a

Abstract: smd code marking rac smd marking code s 2026 DIODE W1 SMD diode SMD code 10 diode SMD MARKING CODE S SMD DIODE MARKING 14 SMD diode 0402 DIODE SMD 55 smd diode code A
Contextual Info: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDQR5V0UP RoHS Device Features 0402/SOD-923F - Uni-directional ESD protection. - Surface mount package. - Ultra small SMD package:0402. - High component density. 0.041 1.05 0.037(0.95) 0.026(0.65) 0.022(0.55)

1PS76SB21

Abstract: BAT721C L9 BAT721C BAT721 BAT721A BAT721S SC-76 Marking codes MARKING CODE SMD s1 sot23
Contextual Info: 1PS76SB21; BAT721 series Schottky barrier diodes in small packages Rev. 06 — 21 December 2006 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device SMD plastic packages.

BAP142LX

Abstract: DIODE SMD CODE MARKING LG
Contextual Info: BAP142LX Silicon PIN diode Rev. 01 — 30 July 2007 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • ■ ■ ■ ■ High voltage, current controlled RF resistor

Contextual Info: Schottky Barrier Diode Single Diode OUTLINE Package : 1F D1FS6 Unit ‘mm Weight U.0f>8u Typ a v-K -y-» 60V 1.1A ' Cathode mark 1I r l cos I GO cn Feature • 'J S M D • Small SMD • P r r s m 7 ' K 5 > î/ x ( S S E • P rrsm Rating Type Na ir: CM

smd diode code BAS85

Abstract: 12NC ordering code nxp data sheet for all smd components nxp Standard Marking BAS85
Contextual Info: BAS85 Schottky barrier diode Rev. 6 — 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted

BAT74

Abstract: BAT74L41
Contextual Info: BAT74 Schottky barrier double diode Rev. 03 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B

pesd1can4

Abstract: BV SMD SOT-023 PESD1CAN.215 PESD1CAN
Contextual Info: PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines

CM 6631

Abstract: 6651 Optocoupler Agilent 8102801EX 8102802PX smd code HF transistor 6N134 6N137 HCPL-2601 HCPL-268K HCPL-560X
Contextual Info: Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers Technical Data 6N134* 81028 HCPL-563X HCPL-663X HCPL-565X 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DSCC

MSA435

Abstract: PMLL4148 PMLL4148L PMLL4448 MSA461
Contextual Info: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.

Contextual Info: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

JJ SMD diode

Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
Contextual Info: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package

smd diode code b3

Abstract: smd diode B3 b3 smd diode DIODE MARKING CODE B3 marking code b3 SOD523F smd diode marking B3
Contextual Info: SMD Schottky Barrier Diode CDBU0130-HF I o = 100 mA V R = 30 Volts RoHS Device Halogen Free Features 0603/SOD-523F 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin package. -Low stored charge. 0.039(1.00) 0.031(0.80) -Majority carrier conduction.

1PS76SB10

Abstract: nxp ordering information MIFARE DESFire sod323 wave soldering
Contextual Info: 1PS76SB10 Schottky barrier single diode 18 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 very small Surface-Mounted Device SMD plastic package.

CDBQR54-HF

Abstract: SMD Schottky Barrier Diode 0402 10010U
Contextual Info: SMD Schottky Barrier Diode CDBQR54-HF I o = 200 mA V R = 30 Volts RoHS Device Halogen Free 0402/SOD-923F Features 0.041 1.05 0.037(0.95) -Low forward voltage. -Designed for mounting on small surface. 0.026(0.65) 0.022(0.55) -Extremely thin/leadless package.

Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

smd diode L29

Abstract: ic smd 6pin for power supply so package marking L28 LP5952
Contextual Info: LP5952 LP5952 350mA Dual Rail Linear Regulator Literature Number: SNVS469D LP5952 350mA Dual Rail Linear Regulator General Description Features The LP5952 is a Dual Supply Rail Linear Regulator optimized for powering ultra-low voltage circuits from a single Li-Ion cell