SMD DIODE HB Search Results

GC smd diode

Abstract: IOA10 smd marking gc diode
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30JC4 Unit-m m W e ig h t 1.5g Typ 10.2 40V 30A Feature • SMD • SMD • <SlR=0.7mA • Low lR=0.7mA • S iy R T È ÎE iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

DIODE JS.9 smd

Contextual Info: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF40SC4 u^hàLÌ°- M 40V m U nit-m m W eight 1.5g (T y p ) 10.2 DA Feature a • SMD < • Tj=150°C 1Tj=150°C • P rrsm 1 P rrs m Rating SMD 1 High lo Rating -Small-PKG 4.7 m Main Use

smd diode marking LM

Abstract: smd diode "marking 77" SMD diode TSA smd diode HB RW marking Diode marking TY
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC3L Unit^mm W eight 0.326g Typ 30 V 10A Feature <SMD • SMD • Tj=150°C •<SV f=0.45V 1Tj=150°C 1 Low Vf=0.45V 1 P rrsm Rating 1 High lo Rating -Small-PKG • P r r s m 7 7A ' 5 > ^ i S IÎE

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP ATTENTION Part Number: AA3535SEL1Z1S Hyper Orange OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

SMD LED

Contextual Info: Part Number: XZMD20X92S-4 3.5x3.5 mm SMD CHIP LED LAMP Features Applications 3.5mm X 3.5mm X 1.15mm SMD LED Signal and symbol luminaire for orientation. Zener diode provided for ESD Protection Marker lights e.g. steps, exit ways, etc . IR-reflow compatible

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. White SMD package, silicone resin.

smd diode marking U1

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use

X4 DIODE SMD

Abstract: smd diode marking LM smd diode marking B3 smd zm diode
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20SC4M P y K L l°- ffl 40V m U n it-m m W e ig h t 1.5g (T y p ) 10.2 DA Feature a <SMD • SMD • Tj= 150°C 1Tj=150°C 1 P rrs m Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use

Contextual Info: b'lE D N AUER P H I L IPS/DISCRETE bbS3R31 0027101 Philips Semiconductors 07T B IAPX Preliminary specification High speed diode FEATURES 1PS193 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

Contextual Info: Part Number: ZCB25X92S-4 3.5x3.5 mm SMD CHIP LED LAMP www.SunLED.com Features 3.5mm X 3.5mm X 1.15mm SMD LED Zener diode provided for ESD Protection IR-reflow compatible Applications Signal and symbol luminaire for orientation. Ideal for accent lighting Standard Package: 2,000pcs / Reel

Contextual Info: Part Number: ZMYLA92S-4 3.5x3.5 mm SMD CHIP LED LAMP www.SunLED.com Features 3.5mm X 3.5mm X 1.15mm SMD LED Zener diode provided for ESD Protection Applications IR-reflow compatible Signal and symbol luminaire for orientation. Ideal for accent lighting Marker lights e.g. steps, exit ways, etc .

PESDxU1UT

Abstract: pesdxu1 PESD12VU1UT PESD15VU1UT PESD24VU1UT 149-12
Contextual Info: PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line

PESDXS4UD

Abstract: PESD5V0S4UD diode SMD MARKING CODE K6 PESD3V3S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD philips diode arrays sot-457 diode SMD MARKING CODE K6 07
Contextual Info: PESDxS4UD series Quadruple ESD protection diode arrays in a SOT457 package Rev. 01 — 4 July 2006 Product data sheet 1. Product profile 1.1 General description Quadruple ElectroStatic Discharge ESD protection diode arrays in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package designed to protect up to 4 signal

Contextual Info: Schottky Barrier Diode Twin Diode mtm DF30JC6 OUTLINE Unit-mm Package : STO -220 Weight 1.5g Typ PyhfLig-(ffl) 10.2 60V 30A Feature • SM D • SMD • Tj=150°C • Tj=150°C • Low lR = 0 .7 m A • <S lR =0.7m A • • Resistance for thermal run-away

D 92 M - 02 DIODE

Abstract: JS marking diode c 92 M - 02 DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7

CIE1931

Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

1203-005570

Abstract: CIE1931
Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535ZG25Z1S Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.

IDC2000

Abstract: CIE1931
Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description The source color devices are made with InGaN on SiC Light Emitting Diode.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QB25Z1S Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Blue source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features