SMD DIODE CODE B4 ST Search Results

smd diode B4

Abstract: smd diode code B4 SMD DIODE DEVICE marking b4 b4 smd diode DIODE MARKING B4 CDBF0145-HF marking code b4 SMD marking B4 SMD MARKING CODE 102 diode B4
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0145-HF RoHS Device Io = 100 mA V R = 45 Volts Features 1005(2512) Halogen free. 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin/leadless package. 0.051(1.30) 0.043(1.10)

smd diode B4

Abstract: smd diode code B4 SMD DIODE DEVICE marking b4 b4 smd diode SMD MARKING CODE b4 DIODE MARKING B4 marking code b4 SMD marking B4 diode b4 DIODE schottky SMD MARKING CODE 45
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0145-HF RoHS Device Io = 100 mA V R = 45 Volts Features 0603(1608) Halogen free. 0.071(1.80) 0.063(1.60) Designed for mounting on small surface. Extremely thin/leadless package. 0.039(1.00) 0.031(0.80)

smd diode B4

Contextual Info: SMD Schottky Barrier Diode CDBF0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Designed for mounting on small surface. -Extremely thin/leadless package. 0.051(1.30) 0.043(1.10) -Low leakage current.

Contextual Info: SMD Schottky Barrier Diode CDBU0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free Features 0603/SOD-523F 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin/leadless package. -Low leakage current. (I R =0.1uA typ.@V R =10V)

Contextual Info: SMD Schottky Barrier Diode CDBF0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Designed for mounting on small surface. -Extremely thin/leadless package. 0.051(1.30) 0.043(1.10) -Low leakage current.

Contextual Info: SMD Schottky Barrier Diode CDBU0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free Features 0603/SOD-523F 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin/leadless package. -Low leakage current. (I R =0.1uA typ.@V R =10V)

varistor 472m

Abstract: 5024x t60403-k5024-x044 5024X044 VAC-5024-X044 ST7580 472m varistor TRANSIL DIODE smd MB542B-01 Tantalum Capacitor smd
Contextual Info: AN3273 Application note STEVAL-IPP001V2: E-meter PLM demonstration board Introduction The purpose of this application note is to describe the use of the E-meter PLM demonstration board both in standalone and network mode. The E-meter demonstration board can be used as a guideline to design a typical energy-meter board for smart metering

t60403-k5024-x044

Abstract: ST7580 STM32F103VET STM32 RM0008 vac t60403-k5024-x044 8097 microcontroller architecture and details RM0008 Reference Manual STM32F103xC STM32-RTC TRANSIL DIODE smd VAC-5024-X044
Contextual Info: UM0997 User manual STEVAL-IPP001V2: E-meter demonstration board with PLM Introduction The E-meter demonstration board can be used as a guideline to designing a typical energy meter board for smart metering applications. It was designed to include advanced features

CDBF0145-HF

Contextual Info: SMD Schottky Barrier Diode CDBF0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free Features 1005/SOD-323F - Designed for mounting on small surface. 0.102 2.60 0.095(2.40) - Extremely thin / leadless package. - Low leakage current. (IR=0.1uA typ.@VR=10V)

CDBU0145-HF

Contextual Info: SMD Schottky Barrier Diode CDBU0145-HF I o = 100 mA V R = 45 Volts RoHS Device Halogen Free Features 0603/SOD-523F - Designed for mounting on small surface. 0.071 1.80 0.063(1.60) - Extremely thin / leadless package. - Low leakage current. (IR=0.1uA typ.@VR=10V)

Contextual Info: SMD Schottky Barrier Diode CDBU0145 I o = 100 mA V R = 45 Volts RoHS Device Features 0603/SOD-523F - Designed for mounting on small surface. 0.071 1.80 0.063(1.60) - Extremely thin / leadless package. - Low leakage current. (IR=0.1uA typ.@VR=10V) - Majority carrier conduction.

75N3LLH6

Abstract: STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint
Contextual Info: STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.0059 Ω 75 A STU75N3LLH6-S 30 V

75n3l

Abstract: STU75N3LLH6 STD75N3LLH6 STD75N3L 75N3LLH6 75n3 std75n STD75N3LL
Contextual Info: STD75N3LLH6 STU75N3LLH6 N-channel 30 V, 0.0045 Ω, 75 A, DPAK, IPAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.006 Ω 75 A 3 3 2 • RDS(on) * Qg industry benchmark

VARISTOR k275

Abstract: K95 varistor S20 K275 varistor varistor s20 k275 "Surge Arresters" pspice siemens automotive relay dc 12v S20K275 sm 323 module Siemens varistor s20k275 k275 varistor
Contextual Info: 3 Application and design examples 3.1 Switching off inductive loads The discharge of an inductor produces high voltages that endanger both the contact breaker switching transistor and the like and the inductor itself. According to equation 16 the energy stored

CC0402KRX7R9BB102

Abstract: yageo R68 choke C210-C215 R118-R122 AA19 smd diode SMD capacitor aa4 aa5 C216-C221 smd diode u1j sot23-5 SMD CODE E5 c225 diode smd
Contextual Info: S1D13771 S5U13771B00B USB Evaluation Board User Manual Document Number: X82A-G-001-01 Status: Revision 1.01 Issue Date: 2006/07/26 SEIKO EPSON CORPORATION 2006. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

APHK1608RWC

Abstract: APHK1608RWC-A BTA12-700BW CIE1931
Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHK1608RWC/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

Contextual Info: 3.2x1.6 mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APK3216RWC/Z-F01 WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN Light Emitting Diode. Static electricity and surge damage the LEDS.

pt-120 Board

Abstract: CIE1931
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APTK2012RWC/A-F01 WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

CIE1931

Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APTD3216RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

CIE1931

Contextual Info: 2.8X1.0mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APKA2810RWC/A-F01 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Emitting Diode. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or

CIE1931

Contextual Info: 3.2mmx1.6mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT3216RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

CIE1931

Contextual Info: 3.2x1.6 mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APK3216RWC/A-F01 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

CIE1931

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT2012RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.