SMD DIODE B3 Search Results

diode tfk s 220

Abstract: TFK BP 3 TFK 140 TFK S KJ SMD DIODE MARKING
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF10SC4M PyKLl°- ffl 40V m Unit-mm Weight 1.5g (Typ) 10.2 DA Feature a • SMD <SMD • Tj=150°C 1Tj=150°C 1 P rrsm Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use 1Switching Regulator

Contextual Info: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

X4 DIODE SMD

Abstract: smd diode marking LM smd diode marking B3 smd zm diode
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20SC4M P y K L l°- ffl 40V m U n it-m m W e ig h t 1.5g (T y p ) 10.2 DA Feature a <SMD • SMD • Tj= 150°C 1Tj=150°C 1 P rrs m Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use

1PS184

Abstract: JTP 85 diode capacitance diode marking T1
Contextual Info: Diodes SMD Type High-Speed Double Diode 1PS184 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Continuous reverse voltage:max. 80 V 0.55 High switching speed: max. 4 ns +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Schottky Barrier Diode Single Diode M2FH3 U n it ‘ m m Package : M2F Weight 0.072« T y p 30V 6A Feature • /JvguSMD •«« V f=0.36V • Small SMD • Super-Low Vf=0.36V • I { "J t U — iiJ S K ih • Reverse connect protection for DC power source

1203-005570

Abstract: CIE1931
Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

IDC2000

Abstract: CIE1931
Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

LM 385 N

Abstract: CIE1931
Contextual Info: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.

CIE1931

Contextual Info: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA3010RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

Contextual Info: Philips Semiconductors Product specification High-speed double diode BAW56W FEATU RES DESCRIPTION • Very small plastic SMD package The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the

CIE1931

Contextual Info: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA3010RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.

smd diode marking U10

Abstract: Diode marking TY smd diode marking B3 smd diode HB
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30SC4M u^hàLÌ°- M 40V m Feature a <SMD • Tj=150°C 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • P rrsm DC/D C 4.7 Main Use it 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game, Office Automation

smd diode B3

Abstract: b3 smd diode b3 smd transistor SMD transistor b3 BF1005
Contextual Info: ASB0130 SMD Schottky Barrier Diode Preliminary Features General Description IO = 100mA VR = 30V 0603(1608) 0.071(1.80) 0.063(1.60) - Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) - Extremely thin package. - Low drop-down voltage. 0.033(0.85)

CIE1931

Contextual Info: 2.8X1.0mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APKA2810RWC/A-F01 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Emitting Diode. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or

CIE1931

Contextual Info: 3.5x2.8 mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: AA3528RWS/Z ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN Light Emitting Diode. Static electricity and surge damage the LEDS.

diode tfk s 220

Abstract: TFK 490 tfk 123 7 TFK S
Contextual Info: Schottky Barrier Diode Twin Diode mtm DF25SC6M 60V m U nit-m m Package : STO -220 W eight 1.5g T y p P y K L l°-(ffl) 5A 10.2 Feature a <SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SM D • Tj=150°C • P OUTLINE rrsm 4.7 Main Use

5B1 zener diode

Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

CIE1931

Abstract: 034b3
Contextual Info: 2.8X1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: AA2810RWS/Z PRELIMINARY SPEC ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN Light Emitting Diode. Static electricity and surge damage the LEDS.

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

APHK1608RWC

Abstract: APHK1608RWC-A BTA12-700BW CIE1931
Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHK1608RWC/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

smd 5b1

Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

smd code book B3 transistor

Abstract: smd diode code b3 smd code book B3 smd diode B3 sod*323* diode MARKING B3 b3 smd transistor b3 smd diode KSD-C004-002 DIODE MARKING CODE B3 smd code ND
Contextual Info: SDP510D Semiconductor Pin Diode Features • • • • • SMD package : SOD-323 Low capacitance : CT=0.25pF Typ. Low series resistance : rs=1.5Ω(Typ.) VHF tuner band RF attenuator application AGC for FM tuner Ordering Information Type No. Marking Package Code

smd diode sod-323 marking code a2

Abstract: Zener Diode SOD-323 marking code j2 Zener Diode SOD-323 marking code a2 SMD ZENER DIODE E1 smd zener diode code J1 Zener diode smd marking Z2 smd diode sod-323 marking code 500 Diode smd code f2 SMD Transistor Marking Code F3 Zener diode smd marking e2
Contextual Info: MM3Z5221B~MM3Z5268B SILICON PLANAR ZENER DIODES Silicon Planar Zener Diode in a small plastic SMD SOD-323 package PINNING PIN Features • Total power dissipation: Max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5%