SMD DIODE B2 Search Results

smd diode code B2

Abstract: diode marking b2 CDBER00340 SMD marking b2 DIODE SMD CODE MARKING 35
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER00340 RoHs Device Io = 30 mA V R = 40 Volts Features 0503(1308) Designed for mounting on small surface. 0.053(1.35) 0.045(1.15) Extremely thin package. Low stored charge. Majority carrier conduction.

BAS21H

Abstract: MARKING JSp
Contextual Info: BAS21H Single high-voltage switching diode Rev. 02 — 3 November Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device SMD plastic package.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Hyper Orange Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

smd Marking OU

Abstract: B05S-G B05S smd marking NE B10S B10SG
Contextual Info: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)

1PS184

Abstract: A2 diode smd SC59
Contextual Info: Philips Semiconductors Product specification High-speed double diode 1PS184 FEATURES DESCRIPTION • Small plastic SMD package The 1PS184 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small plastic SMD SC59

smd diode code B2

Abstract: SMD diode B2 CDBER00340-HF Device marking code 1m diode diode marking b2 smd diode code b2 smd 1m SMD diode SMD marking b2 SMD MARKING CODE B2 diode marking b2
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER00340-HF RoHS Device Io = 30 mA V R = 40 Volts Features 0503(1308) Halogen free. 0.053(1.35) 0.045(1.15) Designed for mounting on small surface. Extremely thin package. Low stored charge. 0.034(0.85)

SOD123F footprint

Abstract: data sheet for all smd components smd diode code B2 SOD123F DIODE Sp marking code single power diode package SMD Packages BAS21H philips package information
Contextual Info: BAS21H Single high-voltage switching diode in small SOD123F package Rev. 01 — 11 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead SMD plastic package.

Contextual Info: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. -Ideal for printed circuit board. 0.031 0.80 0.019 (0.50)

QW-G1106

Abstract: smd diode code B2 diode marking b2 SMD Schottky Barrier Diode 0402 SMD MARKING CODE B2
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR00340-HF RoHS Device Io = 30 mA V R = 40 Volts Features 0402(1005) Halogen free. 0.041(1.05) 0.037(0.95) Designed for mounting on small surface. Extremely thin package. 0.026(0.65) 0.022(0.55) Low stored charge.

smd diode code B2

Abstract: Device marking code 1m diode sMD diode B2 diode marking b2 diode code b2 smd diode marking b2 smd Diode marking CODE 1M SMD marking b2 smd schottky diode b2 QW-G1002
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBU00340-HF RoHS Device Io = 30 mA V R = 40 Volts Features 0603(1608) Halogen free. 0.071(1.80) 0.063(1.60) Designed for mounting on small surface. Extremely thin package. 0.039(1.00) 0.031(0.80) Low stored charge.

smd diode code B2

Abstract: SMD Schottky Barrier Diode 0402 SMD marking b2 diode code b2 smd SMD Schottky Barrier Diode 0402 D1 diode marking b2 SMD diode B2 smd b2 marking
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR00340 RoHS Device Io = 30 mA V R = 40 Volts Features 0402(1005) Designed for mounting on small surface. 0.041(1.05) 0.037(0.95) Extremely thin package. Low stored charge. 0.026(0.65) 0.022(0.55) Majority carrier conduction.

smd diode code B2

Abstract: SMD MARKING CODE 102 diode code b2 smd 1m SMD diode SMD diode B2 smd code marking pd SMD MARKING CODE 009 SMD MARKING CODE D1 marking code SMD 30 MARKING CODE SMD diode
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBF00340-HF RoHS Device Io = 30 mA V R = 40 Volts Features 1005(2512) Halogen free. 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin package. 0.051(1.30) 0.043(1.10) Low stored charge.

general purpose bridge rectifier

Abstract: comchip rectifier bridge low smd diode bridge
Contextual Info: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-HF Thru B10S-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Halogen Free MBS Features -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board.

Contextual Info: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)

KPK-3020QWC-D

Abstract: smd diode B4 4600k
Contextual Info: 3.0x2.0mm SMD CHIP LED LAMP ATTENTION Part Number: KPK-3020QWC-D WHITE OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z3.0mmX2.0mm zLOW SMT LED, 1.3mm THICKNESS. Sapphire Light Emitting Diode. POWER CONSUMPTION.

D 819

Contextual Info: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V

1203-005570

Abstract: CIE1931
Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

diode schottky 40v 30ma

Contextual Info: ASB00340 SMD Schottky Barrier Diode Preliminary Features General Description IO = 30mA VR = 40V 0603(1608) 0.071(1.80) 0.063(1.60) - Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) - Extremely thin package. - Low capacitance. 0.033(0.85)

IDC2000

Abstract: CIE1931
Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features

CIE1931

Contextual Info: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.

CIE1931

Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.