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    SMD DIODE 8A H Search Results

    SMD DIODE 8A H Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX330BH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF
    BLM15PX600SH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN PDF
    BLM21HE601SN1L
    Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO PDF
    BLM21HE472BH1L
    Murata Manufacturing Co Ltd FB SMD 0805inch 4700ohm POWRTRN PDF
    BLM15PX330SH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF

    SMD DIODE 8A H Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DF8L60US 600V 8A Feature • SMD • SB E E • trr=25ns • SMD • High Voltage • trr-25ns • PFC • • • • • Main Use •mm.OA • FA PFC Power Factor Correction Switching Regulator Fly Wheel


    OCR Scan
    DF8L60US trr-25ns li501I J532-1) PDF

    smd code marking WV

    Abstract: 6F SMD SMD MARKING CODE 501 smd diode 6F 8L60 smd diode wv marking rzr marking rzr -sot23 -led smd marking code 8A fly wheel
    Contextual Info: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DF8L60US 600V 8A Feature • SMD • SMD • High Voltage • trr-25ns • trr-2 5 n s • PFC • PFC Pow er Factor Correction Main Use • Switching Regulator • Fly Wheel •mm,OA • H om e A ppliance, Office Automation


    OCR Scan
    DF8L60US trr-25ns STO-220 J532-1) smd code marking WV 6F SMD SMD MARKING CODE 501 smd diode 6F 8L60 smd diode wv marking rzr marking rzr -sot23 -led smd marking code 8A fly wheel PDF

    ADP1048-600-EVALZ

    Abstract: Analog Devices A1W SMD P275RD125
    Contextual Info: ADP1048 600 Watt Evaluation Kit ADP1048-600-EVALZ PRD 1363 FEATURES Interleaved Boost PFC topology providing high power factor and low THD Protection features for AC line input and high voltage output Current balancing between two phases High efficiency I2C serial interface to PC


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    ADP1048 ADP1048-600-EVALZ ADP1048-600-EVALZ Analog Devices A1W SMD P275RD125 PDF

    1N4148 SMD

    Abstract: 1N4148 equivalent SMD
    Contextual Info: ADP1048 Bridgeless PFC Evaluation Kit ADP1048-Brigeless PRD 1378 FEATURES Bridgeless Boost PFC topology providing high efficiency, high power factor and low THD Protection features for AC line input and high voltage output I2C serial interface to PC Software GUI


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    ADP1048 ADP1048-Brigeless ADP1047 ADP3303 ADP1048-Bridgeless 1N4148 SMD 1N4148 equivalent SMD PDF

    SMD 8A TRANSISTOR

    Abstract: transistor SMD 8A smd transistor 8A FDB4020P KDB4020P
    Contextual Info: MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P FDB4020P TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 High density cell design for extremely low RDS(on).


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    KDB4020P FDB4020P) O-263 SMD 8A TRANSISTOR transistor SMD 8A smd transistor 8A FDB4020P PDF

    TO-252AA Package

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - Automotive-Grade Rectifiers and Diodes FRED Pt and HEXFRED ® AEC-Q101 Qualified FRED Pt® and HEXFRED® Ultrafast Rectifiers and Soft Recovery Diodes in Six Package Options KEY BENEFITS


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    AEC-Q101 O-220, O-262, O-247, VMN-PT0358-1402 TO-252AA Package PDF

    KPBA-3010SURKQBDC

    Contextual Info: 3.0mmx1.0mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPBA-3010SURKQBDC ATTENTION Hyper Red Blue OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. The Hyper Red source color devices are made with Al-


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    KPBA-3010SURKQBDC NOV/17/2011 DSAE2495 KPBA-3010SURKQBDC PDF

    Contextual Info: SMD ESD Protection Diode CPDT6-5V4U RoHS Device Features -IEC61000-4-2 8kV(Contact), 15kV(air). -Surface mount package. -High component density. SOT-23-6 Mechanical data 0.119(3.02) 0.111(2.82) -Case: SOT-23-6 Standard package, molded 0.067(1.70) 0.059(1.50)


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    -IEC61000-4-2 OT-23-6 OT-23-6 STD-750D, QW-BP016 PDF

    Contextual Info: SMD ESD Protection Diode CPDT5-5V0U RoHS Device Features -IEC61000-4-2 8kV Contact , 15kV(air). SOT-23-5 -Surface mount package. -High component density. 0.119(3.02) 0.111(2.82) Mechanical data 0.067(1.70) 0.059(1.50) -Case: SOT-23-5 Standard package, molded


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    -IEC61000-4-2 OT-23-5 OT-23-5 MILSTD-750D, QW-BP003 PDF

    "Aluminum Electrolytic Capacitor" 100me100px

    Abstract: "Toggle Switch" 8.2nF 100me100px 100uF, 100v IHLP5050FDER100M01 ceramic capacitor, .1uF 50v IHLP5050FDER 487 SMD DIODE capacitor 100uF/100V
    Contextual Info: ISL8107EVAL1Z Application Note June 5, 2008 AN1402.0 Introduction Circuit Setup The ISL8107 is a single-phase PWM controller that operates from 9V to 75V bias supply voltage. The PWM controller drives an external high-side N-Channel MOSFET in a non-synchronous buck converter topology. The ISL8107


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    ISL8107EVAL1Z AN1402 ISL8107 ISL8107 com/data/fn/fn6605 ISL8107EVAL1Z "Aluminum Electrolytic Capacitor" 100me100px "Toggle Switch" 8.2nF 100me100px 100uF, 100v IHLP5050FDER100M01 ceramic capacitor, .1uF 50v IHLP5050FDER 487 SMD DIODE capacitor 100uF/100V PDF

    P-TO-247-3-1

    Abstract: smps* ZVT Electronic ballast 40W IKB03N120H2 1000v 3a diode Electronic ballast 220 v 40W f 9222 l Q67040-S4594 IKP03N120H2 IKW03N120H2
    Contextual Info: IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IKP03N120H2, IKW03N120H2 IKB03N120H2 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-247-3-1 O-247AC) P-TO-247-3-1 smps* ZVT Electronic ballast 40W IKB03N120H2 1000v 3a diode Electronic ballast 220 v 40W f 9222 l Q67040-S4594 IKP03N120H2 IKW03N120H2 PDF

    ISL6745 Application Notes

    Abstract: half-bridge power supply half bridge converter ISL6745 murata filter cfm 455 d diode smd 2d AN-1439 ISL6745EVAL1Z smd diode S2 HIP2101
    Contextual Info: ISL6745EVAL1Z 48V to 12V 120W Half-Bridge Power Supply for Telecom Applications Application Note November 5, 2008 AN1439.0 SR HIP2101 UVLO, OVP ISL6720 ISL6745 FIGURE 1. TOP VIEW OF THE ISL6745EVAL1Z EVALUATION BOARD The ISL6745EVAL1Z evaluation board utilizes Intersil’s


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    ISL6745EVAL1Z AN1439 HIP2101 ISL6720 ISL6745 ISL6745A ISL6745 ISL6745 Application Notes half-bridge power supply half bridge converter murata filter cfm 455 d diode smd 2d AN-1439 smd diode S2 HIP2101 PDF

    1E14

    Abstract: 2E12 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
    Contextual Info: FSYE23A0D, FSYE23A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    FSYE23A0D, FSYE23A0R 1E14 2E12 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3 PDF

    smps* ZVT

    Abstract: 1200v 3A 15v 60w smps Electronic ballast 40W IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 P-TO-247-3-1
    Contextual Info: IGP03N120H2, IGW03N120H2 IGB03N120H2 HighSpeed 2-Technology • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies C G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits


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    IGP03N120H2, IGW03N120H2 IGB03N120H2 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-247-3-1 O-247AC) smps* ZVT 1200v 3A 15v 60w smps Electronic ballast 40W IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 P-TO-247-3-1 PDF

    IPM04S0A0S10

    Abstract: IPM12S0A0S08
    Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection


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    12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220 IPM04S0A0S10 IPM12S0A0S08 PDF

    IPM04S0A0S10

    Abstract: 509K
    Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection


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    12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220 IPM04S0A0S10 509K PDF

    IPM12S0A0R08FA

    Contextual Info: FEATURES High efficiency: 93% @ 12Vin, 5V/8A out Small size and low profile: 17.8x15.0x7.8mm 0.70”x0.59”x0.31” Output voltage adjustment: 0.8V~5V Monotonic startup into normal and pre-biased loads Input UVLO, output OCP Remote ON/OFF Output short circuit protection


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    12Vin, QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM12S x6220 IPM12S0A008 IPM12S0A0R08FA PDF

    1E14

    Abstract: 2E12 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
    Contextual Info: FSYE23A0D, FSYE23A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    FSYE23A0D, FSYE23A0R 1E14 2E12 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3 PDF

    8B TRANSISTOR SMD

    Abstract: LM124/883 LM124AJRLQMLV LM124AJRQMLV LM124QML 5962R9950402
    Contextual Info: Low Power Quad Operational Amplifiers General Description Advantages The LM124/124A consists of four independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split


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    LM124/124A 8B TRANSISTOR SMD LM124/883 LM124AJRLQMLV LM124AJRQMLV LM124QML 5962R9950402 PDF

    smd 1C

    Abstract: 1b.1 smd transistor
    Contextual Info: IC IC SMD Type P-Channel 2.5V Specified PowerTrench MOSFET KDS6375 Features -8 A, -20 V. RDS ON = 24m @ VGS = -4.5 V RDS(ON) = 32m @ VGS =-2.5V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability


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    KDS6375 smd 1C 1b.1 smd transistor PDF

    Q67040-S4628

    Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
    Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


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    ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 Q67040-S4628 ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration PDF

    IR1155

    Abstract: IR1155S
    Contextual Info: 13 April 2011 Data Sheet No. PD97152 IRAC1155-300W Reference Design Kit for IR1155 One Cycle Control PFC IC Product Summary REFERENCE DESIGN KIT FEATURES • • • • • • • • • • • IEC61000-3-2 Class D Standards Compliant Less than 10% Total Harmonic Distortion (115230VAC/300W)


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    PD97152 IRAC1155-300W IR1155 IEC61000-3-2 115230VAC/300W) 115-230VAC/300W) 100kHz 85-264VAC IR1155 IR1155S PDF

    Contextual Info: PD-97472 IR3871MPBF SupIRBuck TM 8A HIGHLY INTEGRATED WIDE-INPUT VOLTAGE, SYNCHRONOUS BUCK REGULATOR Features • •           Input Voltage Range: 3V to 26V Output Voltage Range: 0.5V to 12V Continuous 8A Load Capability Constant On-Time control


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    PD-97472 IR3871MPBF IR3871 refe1379 PDF

    Contextual Info: User Guide 030 ISL8117EVAL1Z Evaluation Board User Guide Description Key Features The ISL8117EVAL1Z evaluation board shown in Figure 1 features the ISL8117. The ISL8117 is a 60V high voltage synchronous buck controller that offers external soft-start, independent enable functions and integrates UV/OV/OC/OT


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    ISL8117EVAL1Z ISL8117. ISL8117 100kHz UG030 PDF