SMD DIODE 64 A Search Results

JJ SMD diode

Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
Contextual Info: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package

smd diode UM-12

Contextual Info: LED19-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LED19-SMD5

Contextual Info: LED19-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

Contextual Info: LED22-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.20 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

Contextual Info: BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches 2 • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance 1 • For frequencies up to 3 GHz VES05991 • Extremely small plastic SMD package

Contextual Info: LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

Contextual Info: LED20-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.05 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

Contextual Info: LED21-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LED19-SMD5R

Contextual Info: LED19-SMD5R TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

smd diode schottky code marking 5A

Abstract: diode SMD MARKING CODE JV diode smd 6j DIODE SMD MARKING CODE VE SHINDENGEN DIODE SMD 6J U Voltage regulator diode smd
Contextual Info: Schottky Barrier Diode single Diode m n m M1FJ4 o u tlin e W eight 0.027« T y p 40V 1.5A i j '/ —K t — ? Cathode m ark (D Feature • A h iü S M D • Small SMD • filR = 0 .0 5 m A • Low lR=0.05mA |z 64 T y p e No. D a te code 3.9 Main Use •

Contextual Info: DAF 811 A /K . DAF 814 A/K Fast Switching Diode Arrays Schnelle Dioden Sätze Nominal power dissipation Verlustleistung 1-1 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100.400 V 24 x 3 x 5.1 [mm] Weight approx.

Contextual Info: DA 811 A /K . DA 8110 A/K Diode Arrays Dioden Sätze Nominal power dissipation Verlustleistung 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100. 1000 V 24 x 3 x 5.1 [mm] Weight approx. Gewicht ca. 0,6 g

VERPACKUNGSVORSCHRIFT

Contextual Info: RA 2505.RA 2510 Si-Gleichrichterzellen in Button-Bauform Silicon Rectifier Button-Cell m 25 A Nominal current Nennstrom =a 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung tr Plastic case, coloured metal ring indicates cathode

Contextual Info: BV 4, BV 6 Si-Hochspannungs-Gleichrichter High Voltage Si-Rectifier 50 mA Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3 000. 5 000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0

VERPACKUNGSVORSCHRIFT

Abstract: by6000 Bauelemente
Contextual Info: BY 4000.BY 8000 Si-Hochspannungs- Gleichrichter High Voltage Si-Rectifier 1.5.0.7 A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3000.7000 V Plastic case Kunststoffgehäuse -D O -2 0 1 Weight approx. Gewicht ca.

Contextual Info: Silicon Rectifier Cell Silizium-Gleichrichterzellen Nominal current Nennstrom 12 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1000 V Rectifier cell with polysiloxan passivation Gleichrichterzelle mit Polysiloxanpassivierung Weight approx.

STS Bv 1500

Contextual Info: BV 8, BV 12, BV 16 High Voltage Si-Rectifier Si-Hochspannungs-Gleichrichter Nominal current Nennstrom 350 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 7000. 15000 V Plastic case Kunststoffgehäuse 0 6.3 x 21 [mm] Weight approx. Gewicht ca.

Contextual Info: AG 6A .M Silizium-Gleichrichterzellen Silicon Rectifier Ceti 6A Nominal current Nennstrom Polysiloxan •05.2 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung r cu Rectifier cell with polysiloxan passivation Gleichrichterzelle mit Polysiloxanpassivierung

Contextual Info: DB 15-005.-16 Dreiphasen-Si-Briickengleichrichter 3-Phase Si-Bridge Rectifiers 15 A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 5 0 .1600 V Plastic case with Al-bottom Kunststoffgehäuse mit Alu-Boden 28.5 x 28.5 x 10 [mm]

Contextual Info: MR 820.MR 828 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 5A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1000 V Plastic case Kunststoffgehäuse 0 8 X 7.5 [mm] Weight approx. Gewicht ca. 1.4 i

Contextual Info: DB 25-005.-16 Dreiphasen-Si-Brfickengleichrichter 3-Phase Si-Bridee Rectifiers Nominal current Nennstrom 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1600 V Plastic case with Al-bottom Kunststoffgehäuse mit Alu-Boden 28.5 x 28.5 x 10 [mm]

3H DIODE smd

Abstract: VERPACKUNGSVORSCHRIFT diode smd 3H
Contextual Info: FE 3A .FE 3H Sunerschnelle Silizium Gleichrichter Super Fast Silicon Rectifier 3A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung / 50.400 V 4 .5 ” Plastic case Kunststoffgehäuse ~ D 0201 Weight approx. Gewicht ca.

Contextual Info: IN 5400K .1N 5408K Silizium Gleichrichter Silicon Rectifier 3A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0

Contextual Info: SB 220.SB 2100 Si-Schottkv-Rectifier Si-Schottkv-Gleichrichter 2A Nominal current Nennstrom 20. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung I I Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. — 0,8:8:8? 0.4 g