SMD DIODE 444 Search Results

Contextual Info: SMD Switching Diode SMD Diodes Specialist CDSV6-4448D-G RoHS Device Features Fast switching speed. Ultra-small surface mount package. SOT-363 For general purpose switching applications. 0.067 1.70 0.059(1.50) High conductance power dissipation. Mechanical data

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

SOD-363

Contextual Info: SMD Switching Diode CDSV6-4448D-G RoHS Device Features -Fast switching speed. SOT-363 -Ultra-small surface mount package. -For general purpose switching applications. 0.087 2.20 0.079(2.00) -High conductance power dissipation. Mechanical data 0.053(1.35)

Contextual Info: SMD Switching Diode CDST6-4448TI-G RoHS Device Features -Fast switching speed. SOT-23-6 -Ultra-small surface mount package. -For general purpose switching applications. 0.119 3.02 0.111(2.82) -High conductance power dissipation. Mechanical data 0.067(1.70)

CDSH6-4448-G

Contextual Info: SMD Switching Diode CDSH6-4448-G RoHS Device Features SOT-563 -Fast Switching Speed 0.067 1.70 0.059(1.50) -For general purpose switching applications. -High conductance. 0.051(1.30) 0.043(1.10) Mechanical data -Case: SOT-563, Molded Plastic 0.022(0.55) 0.018(0.45)

Contextual Info: Philips Semiconductors Product specification High-speed double diode 1PS301 FEATURES DESCRIPTION • Very small plastic SMD package The 1PS301 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated

Zener Diode 4148

Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
Contextual Info: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80

Contextual Info: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

Contextual Info: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung .ÇsO Ct V J 5 0 . ,100 V H Hrgl9 j £ 150 mA nox, Cvo EM Glass case Glasgehäuse DO-35

Diode 4148 MINIMELF

Contextual Info: LL 4148, LL 4150, LL 4151, LL 4448, Si-Allzweck-Dioden für die Oberflächenmontage Surface Mount Small Signal Si-Diodes 150 niA Nominal current Nennstrom 50. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung SOD-80 Glass case MiniMELF

Contextual Info: Oscilloscope Probes and Accessories Professional Oscilloscope Probes feature modular design for maximum flexibility Oscilloscope Probes and Accessories ACCESS FAX ON DEMAND This symbol indicates immediate Fax-On-Demand Technical Information is available. Dial U.S. (800) 444-6785, (Outside U.S.) (909) 469-2991. Enter

IC la 4148

Abstract: ic 4148 diode 4148 CDSV3-4148-G N 4148 diode 4448 LA 4448
Contextual Info: C O A IC H II’ Small Signal Switching Diodes S MEj Diodes CDSV3-4148-G / 4448-G Reverse Voltage: 75 Volts Forward Current: 200mA RoHS Device Features SOT-323 Designed for mounting on small surface. High speed switching. H 0 !0 5 9 l!8 0 * High mounting capability, strong surge

SOD523F

Abstract: diode 4448 4148 sma CDSL4148-G diode t 4148 CDSU4148 4448-G
Contextual Info: COAICHII’ Small Signal Switching Diodes SM Ej D io d e s CDSL4148-G/ 4448-G Reverse Voltage: 75 Volts Forward Current: 500mW RoHS Device Features Designed fo r m ounting on sm all surface. High speed sw itching. High m ounting capability, strong surge w ithstand, high reliability.

4E smd diode

Abstract: Zener diode quad surface mount smd schottky diode A2 SOD-123 Schottky Diode SOT-89 smd transistor 662 composition of material used in zener diode smd transistor 662 x SMD transistor 123 CMPZDC47V CMXZ47VTO
Contextual Info: N ew To T he 2 □□< 4 E di ti on New additions to the 2004 SMD Databook The following pages outline the latest additions to this edition of the surface mount devices databook. Over 90 new devices manufactured by Central Semiconductor have been added, as well as the new material composition data section. To keep up to date on all the latest

smd diode B3

Abstract: GHB-1206L-B3
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B3 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on Sapphire Light Emitting Diode.

GHB-1206L-B2

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B2 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with InGaN on SiC Light Emitting Diode.

GHB-0805-B

Abstract: yp36
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805-B Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Blue source color devices are made with GaN !LOW POWER CONSUMPTION. on Sapphire Light Emitting Diode.

Led driver 10W schematic

Abstract: schematic diagram of mosfet based inverters mini inverter smd inverter 10w Power MosFet inverter schematic diagram four switch mosfet inverter LM5118 mini inverter SMD based 0805YD106KAT2A TDSON-8 Mosfet
Contextual Info: National Semiconductor Application Note 2178 Ron Crews October 17, 2011 Introduction synchronous 4 switch version is realized, with corresponding increase in efficiency and only requires a handful of readably available parts. This is shown in Figure 2, in its basic form. All

GHB-1206-YG

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206-YG Description Features !3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. !LOW POWER CONSUMPTION. !WIDE VIEWING ANGLE. !IDEAL FOR BACKLIGHT AND INDICATOR. !VARIOUS The Green source color devices are made with

GHB-0603-R

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0603-R Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The Hyper Red source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-PLCC-Y Features Description !SINGLE COLOR. The Super Bright Yellow source color devices are made with !SUITABLE DH InGaAIP on GaAs substrate Light Emitting Diode. FOR ALL SMT ASSEMBLY AND SOLDER

diode sy 170

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-PLCC-R2 Features Description !SINGLE COLOR. The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. !SUITABLE FOR ALL SMT ASSEMBLY AND

GHB-1104R-R

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1104R-R Features Description !3.0mmx1.0mm SMT LED, 2.0mm THICKNESS. The Hyper Red source color devices are made with !LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode.

GHB-0402-YG

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0402-YG Features !1.0mmx0.5mm !LOW POWER !WIDE !IDEAL Description SMT LED, 0.5mm THICKNESS. The Mega Green source color devices are made CONSUMPTION. VIEWING ANGLE. with DH InGaAlP on GaAs substrate Light