SMD DIODE 145 Search Results

DIODE marking S4 77

Abstract: smd diode marking 77 marking s4 resistor DIODE S4 77 diode S4 SMD smd marking rd BAP70-02 DIODE marking S4 marking 77 diode MARKING 54 "Pin Diode"
Contextual Info: Diodes SMD Type Silicon PIN diode BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max

Contextual Info: 3.0X2.0mm SMD CHIP LED LAMP KPK-3020NC Description Features ! 3.0mmX2.0mm ! LOW The Pure Orange source color devices are made SMT LED, 1.3mm THICKNESS. with Gallium Arsenide Phosphide on Gallium POWER CONSUMPTION. ! WIDE Phosphide Pure Orange Light Emitting Diode.

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP APT2012NC PURE ORANGE Features Description !2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Pure Orange source color devices are made !LOW POWER CONSUMPTION. with Gallium Arsenide Phosphide on Gallium !WIDE VIEWING ANGLE. Phosphide Pure Orange Light Emitting Diode.

Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP PRELIMINARY SPEC APTD3216ND Features Description !3.2mmx1.6mm SMT LED,1.8mm THICKNESS. The Pure Orange source color devices are made !LOW POWER CONSUMPTION. with Gallium Arsenide Phosphide on Gallium !WIDE VIEWING ANGLE. Phosphide Pure Orange Light Emitting Diode.

Contextual Info: 3.0x1.0mm SMD CHIP LED LAMP KPBA-3010SGNC SUPER BRIGHT GREEN PURE ORANGE Features Description ! 3.0mm The Super Bright Green source color devices are made x 1.0mm SMT LED, 2.0mm THICKNESS. !LOW POWER CONSUMPTION. with Gallium Phosphide Green Light Emitting Diode.

APTB1615SGNC-F01

Contextual Info: 1.6x1.5mm BI-COLOR SMD CHIP LED LAMP APTB1615SGNC-F01 SUPER BRIGHT GREEN PURE ORANGE Features Description 1.6mmx1.5mm SMT LED, 0.7mm THICKNESS. The Super Bright Green source color devices are made LOW POWER CONSUMPTION. with Gallium Phosphide Green Light Emitting Diode.

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP APH1608ND PURE ORANGE Features Description !1.6mmx0.8mm SMT LED,0.65mm THICKNESS. The Pure Orange source color devices are made !LOW with Gallium Arsenide Phosphide on Gallium POWER CONSUMPTION. ! WIDE VIEWING ANGLE. Phosphide Pure Orange Light Emitting Diode.

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP AP1608NC PURE ORANGE Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The Pure Orange source color devices are made !LOW with Gallium Arsenide Phosphide on Gallium POWER CONSUMPTION. !WIDE VIEWING ANGLE. !IDEAL Phosphide Pure Orange Light Emitting Diode.

Contextual Info: 3.2mm x 1.6mm SMD CHIP LED LAMP APT3216NC PURE ORANGE Features Description !3.2mmx1.6mm SMT LED, 0.75mm THICKNESS. The Pure Orange source color devices are made !LOW POWER CONSUMPTION. with Gallium Arsenide Phosphide on Gallium !WIDE VIEWING ANGLE. Phosphide Pure Orange Light Emitting Diode.

Contextual Info: 3.0X2.0mm SMD CHIP LED LAMP KPK-3020NC PURE ORANGE Features Description !3.0mmX2.0mm SMT LED, 1.3mm THICKNESS. The Pure Orange source color devices are made !LOW POWER CONSUMPTION. with Gallium Arsenide Phosphide on Gallium !WIDE VIEWING ANGLE. Phosphide Pure Orange Light Emitting Diode.

Contextual Info: Diodes SMD Type Product specification BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3355 TO-263 +0.1 1.27-0.1 RDS on 2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 9800 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode

Contextual Info: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU

R-78A3.3-0.5SMD

Abstract: 217F R-78A12 dc/dc+converter+5v+/power+converter+dc/dc+5/LC51
Contextual Info: Features ● ● ● ● ● ● ● ● ● INNOLINE Efficiency up to 97%,Non isolated, no need for heatsinks SMD Package Adjustable Output Voltage Wide input range. 4.75V ~ 34V Short circuit protection, Thermal shutdown Remote On/Off Control DC/DC-Converter

film capacitor 0.33uf/CTX x1

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: MOSFET SMD Type Product specification BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1 0.95-0.1

1N4148 diode SMD

Abstract: VIPER26 viper26ld resistor net b 103g w14 smd transistor STGIPS20K60 application note for STGIPL14K60 finder 40.61 UM1036 Transistor hall w12
Contextual Info: UM1036 User manual 2 kW 3-phase motor control STEVAL-IHM028V1 demonstration board featuring the IGBT intelligent power module STGIPS20K60 1 Introduction This document describes the 2 kW 3-phase motor control demonstration board featuring the IGBT intelligent power module STGIPS20K60. The demonstration board is an AC-DC

Contextual Info: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2

15n03l

Abstract: 15N03 IPB15N03L IPP15N03L IPB15N03L SMD OPTIMOS smd code diode 20a
Contextual Info: IPP15N03L IPB15N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) max. SMD version ID V m
12.6 42 P-TO263-3-2

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS405-00010-2v0-E ASSP High Power Factor LED Driver IC for LED lighting MB39C602  DESCRIPTION MB39C602 is a flyback type switching regulator contorller IC. The LED current is regulated by controlling the switching on-time depending on the LED load.

78 DIODE SMD

Abstract: smd transistor 26
Contextual Info: Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1 A, 30 V RDS ON = 80m RDS(ON) = 130m @ VGS = 10 V @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m @ VGS =- 10 V @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON).

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

12W SMD MOSFET

Abstract: mosfet 12w smd IRFM254 IRFN254
Contextual Info: IRFM254 IRFN254 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) IRFM254 20.07 (0.790) 20.32 (0.800) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

Contextual Info: UM10460 Low-cost 4 W mains LED driver for the Japanese market using the TEA1523 Rev. 1 — 16 June 2011 User manual Document information Info Content Keywords TEA1523, SSL, low-cost, LED driver, AC/DC conversion, buck converter, driver, mains supply, user manual