SMD CODE MARKING HD SOT23 Search Results

smd code marking HD SOT23

Contextual Info: SO T2 3 PBSS5130T 30 V; 1 A PNP low VCEsat BISS transistor 9 July 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits

Philips MARKING CODE a91

Abstract: smd code marking TV sot23 smd code marking e3 5C sot23 SOT-23 marking code IT smd code marking HD smd sot23 marking E3 5c sot-23 sot23 marking 5c 8 smd marking NC package sot23
Contextual Info: 11 Voltage Reference SMD Diodes Voltage Reference SMD® Diodes % % % % Description Mechanical Data Philips Components voltage reference series is composed of stabistors low voltage stabilizing diodes and tempera­ ture compensating 6.2V reference diodes. Primary applica­

TRANSISTOR SMD MARKING CODE QR

Abstract: 2PMV65XP
Contextual Info: PMV65XP 20 V, single P-channel Trench MOSFET 21 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

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Contextual Info: PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

SOt23-3 footprint wave soldering

Abstract: MARKING TR SOT23-3 P MOSFET
Contextual Info: PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

PMEG3010BEA

Abstract: PMEG2010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEA PMEG4010BEV PMEGXX10BEA PMEGXX10BEV SC-76 SMD MARKING g5
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product data sheet Supersedes data of 2004 Apr 02 2004 Jun 14 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier

Contextual Info: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV75UP 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV130ENEA 40 V, N-channel Trench MOSFET 13 March 2014 Preliminary data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

PMV40UN2

Contextual Info: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 March 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

SOt23-3 footprint wave soldering

Contextual Info: PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

PMV65XP

Contextual Info: SO T2 3 PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

SMD MARKING g5

Abstract: smd diode g5 PMEG3010BEA diode smd marking SOD323 5-6 transistor smd code marking 420 PMEG2010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEA PMEG4010BEV
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product specification Supersedes data of 2004 Apr 02 2004 Jun 14 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier

DIODE smd marking CODE NZ

Abstract: MARKING CODE 16 transistor sot23 smd code marking HD SOT23
Contextual Info: SO T2 3 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.