SMD BR 12 Search Results

RAC168D

Contextual Info: FIXED CHIP RESISTOR NETWORKS; RECTANGULAR TYPE KAMAYA OHM RAC •Features 1. High-density SMD packaging contributes higher productivity and reduces assembly costs. 2. Halogen*1 and Antimony*2 free product *1 Cl or Br 900ppm, Cl+Br 1500ppm *2 Sb2O3 900ppm

MMBV2107

Abstract: MMBD701LT1 MMBV609LT1 SMD BR 32 IFM450 BAV170LT c30 diode BAS116LT1 BAS21LT1 BAV170LT1
Contextual Info: MX-MICROELECTRONICS SOT-23 PACKAGE • • • • • • • 片式开关二极管 SMD SWITHING DIODES • 片式开关二极管 SMD SWITHING DIODES SOT-23 SMD VARACTOR DIODES 型号 TYPE V(BR) Vdc Min Vdc IR A top VF Vdc IF MA Min IR trr ns PIN 123 Max

Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors DSCC Approved 03028 BR/BX Dielectrics Overview outlined by DSCC. KEMET is approved to DSCC (Defense Supply Center, Columbus) drawing no. 03028 for EIA 0603 case size SMD MLCCs in BR and BX dielectrics. DSCC drawing no. 03028 was developed in response to the

EIA J code marking

Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors DSCC Approved 03029 BR/BX Dielectrics Overview outlined by DSCC. KEMET is approved to DSCC (Defense Supply Center, Columbus) drawing no. 03029 for EIA 0402 case size SMD MLCCs in BR and BX dielectrics. DSCC drawing no. 03029 was developed in response to the

br 39 SMD

Abstract: smd code YL SMD BR 08 br smd code 1210BR br 38 SMD
Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS PART NO. L±20% * Q / µH FREQ. Min. RDC Max. (Ω) IDC Min. Irms * (A) SRF TYP COLOR CODE SDS0804T-1R0M-S 1.0 3 / 100 0.021 3.8 5.0 110 BR, BL, RD SDS0804T-1R5M-S 1.5 5 / 100 0.022 5.2 4.5 90 BR, GN, RD SDS0804T-2R2M-S 2.2

TLP121-4

Abstract: tlp120 smd TLP112A
Contextual Info: Mini Flat Photocouplers SMD Photocouplers Transistor Output_ F7 Collector Breakdown Votage V(BR)CEO(V) Current Transfer Ratio Type No. Pin Configuration Features TLP121 4 ch Type TLP120 AC input £ TLP120-4 GB BV (mA) (V) 80 100 600 100 1200 200

beta 3435

Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
Contextual Info: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

49319

Abstract: 62277 175656 QT06015-055 smd 4468
Contextual Info: .031 .004 .063 .004 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=4100 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 3.5 mW/C MIN POWER RATING: 350mW AT 25C .037 .004 NOTES: SMD 0603 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

Contextual Info: 44 7 x 5 mm SMD CMOS VCXO BR SERIES Features > > > > > > > > > Voltage Controlled Crystal Oscillator VCXO . Fundamental solution. CMOS output, output frequencies 60 MHz to 200 MHz. Wide pull range and good linearity. Excellent low phase noise and jitter.

BR5005L-G

Contextual Info: COMCHIP Silicon Bridge Rectifiers SMD Diodes Specialist BR5005L-G Thru. BR5010L-G Reverse Voltage: 50 to 1000V Forward Current: 50A RoHS Device Features BR-L Metal Heat Sink -Plastic case with heatsink for heat dissipation. -Surge overload -500 Amperes peak.

Contextual Info: Transistors SMD Type Product specification BSP19A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 High Voltage: V BR CEO of 250 and 350 Volts. +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 Available in 12 mm Tape and Reel

Contextual Info: Transistors SMD Type Product specification BSP20A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features High Voltage: V BR CEO of 250 and 350 Volts. +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Available in 12 mm Tape and Reel

Contextual Info: SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD

smd diode marking c1

Contextual Info: SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD

smd transistor marking TL

Abstract: BSP20A FR MARKING SMD TRANSISTOR
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor BSP20A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features High Voltage: V BR CEO of 250 and 350 Volts. +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Available in 12 mm Tape and Reel

Contextual Info: Oscillators 7 x 5 mm SMD CMOS VCXO BR SERIES Features e1E TXC BRC .760 77 > > > > > > > > Voltage Controlled Crystal Oscillator VCXO . Fundamental solution. CMOS output, output frequencies 60 MHz to 220 MHz. Wide pull range and good linearity. Excellent low phase noise and jitter.

Contextual Info: Oscillators 7 x 5 mm SMD CMOS VCXO BR SERIES Features e1E TXC BRC .76 0 77 > > > > > > > > Voltage Controlled Crystal Oscillator VCXO . Fundamental solution. CMOS output, output frequencies 60 MHz to 220 MHz. Wide pull range and good linearity. Excellent low phase noise and jitter.

Contextual Info: Oscillators 14 x 9 mm SMD LVPECL / LVDS CXO 7J SERIES Features f00 BR .348 C X 6 T 1 > > > > > > Standard 14.0 x 9.0 mm PCB Package LVPECL / LVDS output. Various oscillation solutions to meet different performance request. Excellent low phase noise and jitter.

Contextual Info: Think of Frequency Think of SMD Voltage Controlled Crystal Oscillators 7.0 x 5.0 x 1.3 mm BR Series Oscillatots Series come visit our site http://www.txccorp.com Features ． Voltage Controlled Crystal Oscillator VCXO . 1E Ce 0 R C B 7.76 TX 7 ．Fundamental solution.

Contextual Info: Oscillators 7 x 5 mm SMD CMOS VCXO BR SERIES Features e1E TXC BRC .76 0 77 > > > > > > > > Voltage Controlled Crystal Oscillator VCXO . Fundamental solution. CMOS output, output frequencies 60 MHz to 220 MHz. Wide pull range and good linearity. Excellent low phase noise and jitter.

SMD15N05

Abstract: SMU15N05
Contextual Info: SMD/SMU15N05 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TOĆ251 D TOĆ252 G Drain connected to Tab G D S Top View Order Number: G SMD15N05 D S S Top View

JTs smd diode

Abstract: SMD15N05 SMU15N05 TD 33b 25A15
Contextual Info: Temic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary tDa A 15 r DS(on) (Q ) 0.10 V (BR)DSS (V) 50 TO-251 TO-252 o in D O O rO Drain connected to Thb G D S Top View Order Number: SMD15N05

SMU10P05

Abstract: SMD10P05 SMU10P SMD SMU10P05
Contextual Info: SMD/SMU10P05 Siliconix PĆChannel EnhancementĆMode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) -50 0.28 -10 TOĆ251 S TOĆ252 G Drain Connected to Tab G D S Top View Order Number: G SMD10P05 D D S PĆChannel MOSFET Top View Order Number:

GSIB-5S

Abstract: E54214 EDF1yM EDF1yS TO-269AA GBPC12-35W MBXM g2sb
Contextual Info: Bridge Rectifiers Vishay Semiconductors IF AV (A) 0.5 0.9 1.0 1.5 2.0 3.0 4.0 TYPE V(BR) RANGE (V) PACKAGE DEVICE(1) (7) SOURCE (3) FAMILY MAX VF(5) @ IF (V) (A) MBxM G Mini-bridge MBM 200 - 600 1.0 0.4 MBxS G Mini-bridge (SMD) MBS (TO-269AA) 200 - 600 1.0