SMD A4 TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel

202319A

Contextual Info: EVALUATION BOARD DATA SHEET EV183 Evaluation Board for the AAT2822/2823/2824/2825 TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer Introduction The AAT282x family AAT2822, AAT2823, AAT2824, AAT2825 of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor (TFT) liquid-crystal display (LCD). The AAT282x family

AN1294

Abstract: PD60015 PD60015S
Contextual Info: PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

pd55035

Abstract: smd transistor code A4
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: PD60030 PD60030S
Contextual Info: PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

smd transistor code A4

Abstract: AN1294 PD60004 PD60004S
Contextual Info: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power

AN1294

Abstract: LET20015 LET90015
Contextual Info: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION

AN1294

Abstract: LET20015 LET90015
Contextual Info: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION

Contextual Info: Transistors SMD Type N-Channel 30-V D-S MOSFET KI2304DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source

Contextual Info: Transistors IC SMD Type Product specification KI2304DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source

Contextual Info: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

smd marking 58a

Abstract: smd transistor a4 a4 smd transistor smd transistor marking A4 KO3404 SMD TRANSISTOR A4 S DIODE smd marking A4 smd diode A4 marking on IC SMD TRANSISTOR MARKING 28 DIODE EJL
Contextual Info: Transistors IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 28 m VGS = 10V RDS(ON) 43 m (VGS = 4.5V) 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

PD20010

Abstract: PD20010-E AN1294 J-STD-020B
Contextual Info: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection

NV SMD TRANSISTOR

Abstract: AN1294 J-STD-020B LET9045S LET9045STR LET9045TR
Contextual Info: LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V ■ Plastic package ■

PD20010-E

Abstract: PD20010
Contextual Info: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package

capacitor 220 uf

Contextual Info: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead

E2 SMD Transistor

Abstract: SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883
Contextual Info: m W H A R R HM-65642 I S S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM January 1992 Description Features Full CMOS Design Six Transistor Memory Cell Low Standby Supply C u rre n t. . 100|oA Low Operating Supply C urrent.

PD85015-E

Abstract: PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF
Contextual Info: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■

Contextual Info: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION

Contextual Info: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead

PD85015s-e

Abstract: PD85015 AN1294 PD85015-E
Contextual Info: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package