SMD A110 Search Results

Contextual Info: WPPC-A11066 Series High Reliability Photo Coupler DIP/ SMD /H . USR/CNR Listed File # 223387 Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA, VCE = 5V) 2. High isolation voltage between input and output.

Contextual Info: WPPC-A11064 Series High Reliability Photo Coupler DIP/ SMD /H . USR/CNR Listed File # 223387 Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA VCE = 5V) 2. High isolation voltage between input and output.

Contextual Info: WPPC-A11066 Series High Reliability Photo Coupler DIP/ SMD /H . USR/CNR Listed File # 223387 Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA, VCE = 5V) 2. High isolation voltage between input and output.

Contextual Info: WPPC-A11064 Series High Reliability Photo Coupler DIP/ SMD /H . USR/CNR Listed File # 223387 Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA VCE = 5V) 2. High isolation voltage between input and output.

Contextual Info: ISOCOUPLER TM High Reliability Photo Coupler DIP/ SMD /H WPPC-A11066 Series . USR/CNR Listed File # 223387 Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA, VCE = 5V) 2. High isolation voltage between input and output.

Contextual Info: ISOCOUPLER TM High Reliability Photo Coupler DIP/ SMD /H WPPC-A11066 Series . USR/CNR Listed File # 223387 Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA, VCE = 5V) 2. High isolation voltage between input and output.

R0218

Contextual Info: ISOCOUPLER TM High Reliability Photo Coupler DIP/ SMD /H WPPC-A11064 Series . USR/CNR Listed File # 223387 Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA VCE = 5V) 2. High isolation voltage between input and output.

Contextual Info: ISOCOUPLER TM High Reliability Photo Coupler DIP/ SMD /H WPPC-A11064 Series . USR/CNR Listed File # 223387 Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA VCE = 5V) 2. High isolation voltage between input and output.

smd marking YF

Abstract: marking YF smd marking CF smd transistor yf WPPC-A11064 smd marking cf rl
Contextual Info: ISOCOUPLER High Reliability Photo Coupler DIP/ SMD /H WPPC-A11064 Series . USR/CNR Listed File # 223387 VDE (File# 40009584) Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA VCE = 5V) 2. High isolation voltage between input and output.

Contextual Info: High Reliability Photo Coupler DIP I SMD /H WPPC-A11064 Series USR/CNR Listed File # 223387 Features Outside Dimension: Unit 1. Current transfer ratio. n (CTR: MIN. 60% at If = ±1mA V ce = (mm) r? 5V) 2. High isolation voltage between input and output.

Contextual Info: ISOCOUPLER High Reliability Photo Coupler DIP/ SMD /H WPPC-A11066 Series . USR/CNR Listed File # 223387 VDE (File # 40009584) Features Outside Dimension: Unit (mm) 1. Current transfer ratio. (CTR: MIN. 60% at IF = ±1mA, VCE = 5V) 2. High isolation voltage between input and output.

BB145

Abstract: DIODE Sp marking code BP317 943 vco st smd diode marking code str 4090
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 VCO variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145 is a planar technology

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV99S High-speed switching diode array Preliminary specification 2001 Jan 08 Philips Semiconductors Preliminary specification High-speed switching diode array BAV99S PINNING FEATURES • Small plastic SMD package

marking code k1

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV99S High-speed switching diode array Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification High-speed switching diode array BAV99S PINNING FEATURES • Small plastic SMD package

smd diode bas16t philips

Abstract: smd diode marking a6 smd diode 239 diode SMD MARKING CODE A6 BAS16T SC-75 marking code a6 diode marking code A6 smd diode marking code a6 smd diode bas16t
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BAS16T High-speed diode Product specification File under Discrete Semiconductors, SC01 1998 Jan 20 Philips Semiconductors Product specification High-speed diode BAS16T FEATURES DESCRIPTION • Very small plastic SMD package

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

BLT81

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC08b 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation

BA792

Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

358 SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D049 BB190 UHF variable capacitance diode Product specification 2000 Nov 07 Philips Semiconductors Product specification UHF variable capacitance diode BB190 FEATURES • Excellent linearity • Very small plastic SMD package

ba278

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V

4894

Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

2222 730

Abstract: BLT81
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.