SMD 6J U Search Results

kHz-20MHz

Contextual Info: VXO-P9-DEH-6J SMD VCXO LVDS • Features •  Applications: wireless communications, 10 Gigabit Ethernet, SDH, SONET, Fibre Channel, broadband access, DSL, GPON Output frequency up to 800 MHz Low phase noise and low jitter < 0.4 ps Specification Parameter

Contextual Info: PXO-P9-3PEH-6J Low jitter LVPECL SMD Clock Oscillator • Features •   Applications: SONET / SDH / ATM, Gigabit Ethernet, switching system and telecom infrastructure Output frequency up to 800 MHz Low jitter < 1 ps Low phase noise Parameter Specification

Contextual Info: VXO-P9-PEH-6J SMD VCXO LVPECL • Features •  Applications: wireless communications, 10 Gigabit Ethernet, SDH, SONET, Fibre Channel, broadband access, DSL, GPON Output frequency up to 800 MHz Low phase noise and low jitter < 0.4 ps Specification Parameter

Contextual Info: PXO-P9-3DSH-6J Low jitter LVDS SMD Clock Oscillator Features • •   Applications: 10 Gigabit Ethernet, SDH, SONET, Fibre Channel broadband access, DSL, GPON and switching system Output frequency up to 800 MHz Low jitter < 1 ps Low phase noise Parameter

Contextual Info: KBU 6A .M Silizium-Brfickengleichrichter Silicon-Bridge Rectifiers 6.0 A Nominal current Nennstrom - 4.5 X L T 15° \ R£ 'V + 3 5 .700 V Alternating input voltage Eingangswechselspannung Pastic case Kunststoffgehäuse 23.5 x 7 x 19.3 [mm] Weight approx.

fuse smd code N

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHUUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS E L E C T R IC A L CHARACTERISTICS e 25°C TURNS RATIO TX RX □ CL @ lOOkHz/lOOmVRMS

Contextual Info: AG 6A .M Silizium-Gleichrichterzellen Silicon Rectifier Ceti 6A Nominal current Nennstrom Polysiloxan •05.2 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung r cu Rectifier cell with polysiloxan passivation Gleichrichterzelle mit Polysiloxanpassivierung

smd Pj

Abstract: smd diode code pj PJ-0A20X SMD code PJ PJ 33
Contextual Info: CMOS TCXO PJ-0A20X Series Rev C PJ-0A20X Series Frequency Range: 10.0 MHz to 52.0 MHz Description The PJ-0A20X Series of temperature compensated quartz crystal oscillators provide CMOS compatible signals. Features Size, mm 9 x 14 I/O 6J Lead Supply Voltage

Contextual Info: Circuit Protection Terminology Guide Circuit Protection TransGuard /MultiGuard, Transient Voltage Suppressor • Sub ns response time • Bipolar protection • Off state EMI filter, on state transient protection • High peak current and transient energy

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS on trr = 800 V = 14 A Ω ≤ 720 mΩ ≤ 250 ms TO-247 (IXFH) Symbol Test Conditions

smps crb

Abstract: microprocessor for medical implantable grade pacemaker varistor 560-2 microprocessor of medical implantable grade pacemaker medical implantable grade pacemaker military resistors catalog fpc smd connector 30 pin AVX 0805 Hearing Aid chips automotive canbus
Contextual Info: AVX is the technology leader in the Passive electronic component and connector markets. Each year AVX Corporation accepts the challenge of helping Design Engineers create superior products for their customers. Our team of innovators around the world, utilize cutting edge research, design

Contextual Info: MIC4426/4427/4428 Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4426/4427/4428 fam ily of buffer/drivers are built using a new, highly reliable BiCM O S/DM O S process. They are im proved versions of the M IC426/427/428 fam ily of buffer/

IC4427CM

Abstract: SMD MOSFET DRIVE 4427 8 PIN IC4427 IC4426 5962-8850307PX
Contextual Info: MIC4426/4427/4428 ht Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4426/4427/4428 fam ily of buffer/drivers are built using a new, highly reliable BiCMOS/DM OS process. They are improved versions of the M IC426/427/428 fam ily of buffer/

HM-6514-9

Contextual Info: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

smd ka2 diode

Contextual Info: Whnïï HEW LETT* mLriM P a c k a r d AC/DC to Logic Interface H erm etically Sealed O ptocouplers Technical Data HCPL-576X* 5962 8947701 *See matrix for available extensions Features Applications Description • Dual Marked w ith Device Part Number and DESC

zener diode SMD marking code 27 4F

Abstract: Zener diode smd marking 5j Zener diode smd marking 4p smd diode 27 5j diode 5d smd Diode smd 5j Zener diode smd marking code 63 6E SMD CODE diode marking code 4n smd marking 5R
Contextual Info: MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features 1 Cathode 2 Anode Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design

Zener diode smd marking 5j

Abstract: Zener diode smd marking 4p zener diode SMD marking code 27 4F zener smd marking 4X smd diode 27 5j smd diode ZENER marking 4R zener diode 5d SMD smd marking code 4Z smd zener diode code 5F MM1Z120
Contextual Info: MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features 1 Cathode 2 Anode Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design

Zener diode smd marking 5j

Abstract: Zener diode smd marking 4p zener diode SMD marking code 27 4F zener smd marking 4X smd zener diode code 5F SMD diode MARKING 5h smd diode code 6N diode marking code 4n smd diode 27 5j smd marking code 4Z
Contextual Info: MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features 1 Cathode 2 Anode Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design

Contextual Info: MIC4426/4427/4428 Dual 1.5A Low-Side M OSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4426/4427/4428 fam ily of buffer/drivers are built using a new, highly reliable B iC M O S /D M O S process. They are improved versions of the MIC426/427/428 family of buffer/

harris 8212

Contextual Info: 33 H A R R HS-82C12RH Radiation Hardened 8' Bît Input/Output Port March 1996 Features • Functional Diagram Devices QML Qualified in Accordance with MIL-PRF-38535 DS1 » • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

Contextual Info: 31 SMD Handling Precautions 1. S oldering T h ere are generally tw o types o f SM D soldering m ethods: reflow soldering and flow dip sodering. N ecessary precautions for these soldering m ethods are as follow s: 1.1 (1) Soldering M ethods R eflow Soldering

AD846

Contextual Info: REVISIONS LTR DESCRIPTION DATE CYR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A REV 1 SHEET 5 7 6 8 9 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 Charles E. Besore Michael A. Frye MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER,

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.