SMD 2F 1 Search Results

Magtek 21006516

Abstract: iso 7811-2 21006516 magtek ISO 7811-6 MAGNETIC HEAD iso 7811-2 2001 2F SMD MAG-TEK MAGNETIC HEAD circuit
Contextual Info: Magnetic Stripe F/2F Read/Decode Integrated Circuit 21006516 SMD SOIC General Information The F/2F Read/Decode Integrated Circuit in intended for use in recovering F/2F encoded data received from a magnetic head. Features • 150 to more than 12,000 F/2F bits per second

CMBT2907

Abstract: CMBT2907A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS

2f bc850

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G

KP15R25

Contextual Info: SHINDENGEN TSS KP Series KP15R25 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage

KP10N14

Contextual Info: SHINDENGEN TSS KP Series KP10N14 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage

smd transistor 2f

Abstract: smd 2f 2f smd transistor Diode smd 2f KP10L06
Contextual Info: SHINDENGEN TSS KP Series KP10L06 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage

SHINDENGEN

Abstract: KP10R25
Contextual Info: SHINDENGEN TSS KP Series KP10R25 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage

KP15N14

Abstract: KP15N
Contextual Info: SHINDENGEN TSS KP Series KP15N14 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage

BC849

Abstract: BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS

smd diode schottky code marking 2F

Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.

Contextual Info: Schottky Barrier Diode Single Diode m tm D3FS4A O UTLINE Unit-mm Weight 0.16g Typ Package : 2F iJV - F v - ^ thode m ark 40V 2.6A Feature • /J v P S M D • Small SMD • Tj=150°C • < S V f = 0 .4 5 V • Tj=150°C • Low V f = 0 . 4 5 V :ffiïiE

Contextual Info: FastRecover yDi ode Si ngl e OUTLI NE D3FK60 Uni tmm Package 2F 3FK 60 00 ① SMD t r r 100ns VF 品名略号 Type No. 4.0 カソードマーク Cathode mark 600V2. 1A ① ② ② ロット記号 （例） Date code 7.6 Feat ur e 2.8 Smal lSMD Hi ghVol t age

smd diode schottky code marking 2F

Abstract: smd diode schottky code marking nu T13c marking smd NU smd code marking 4A diode smd k9 MARKING JM smd diode marking 325 smd marking code nu
Contextual Info: Schottky Barrier Diode Single Diode m tm m o u tlin e Package : 2F D3FP3 Unit-mm Weight 0.16g Typ ij y -K -7 -9 30V 3A / Cathode mark Feature • Small SMD • Ultra-Low Vf=0.4V • K y T 'J H f f iS K it • Reverse connect protection for DC power source

Contextual Info: Si ngl eZenerDi ode PowerZenerDi ode OUTLI NE ST2030F2 Uni t mm Package 2F カソードマーク Cathode mark 30V2000W 7.0 4.0 T20 30 00 00 ① W SMD ① ② （例） ロット記号（例） 管理番号 Control No. Date code 品名略号 Type No. Feat ur

Contextual Info: Si ngl eZenerDi ode PowerZenerDi ode OUTLI NE ST2027F2 Uni t mm Package 2F カソードマーク Cathode mark 27V2000W 7.0 4.0 T20 27 00 00 ① W SMD ① ② （例） ロット記号（例） 管理番号 Control No. Date code 品名略号 Type No. Feat ur

Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS4A Weight 0.16g Typ 4 0 V 2 .6 A / Cathode mark Feature • /J ^ S M D Unit-mm Package I 2F • V f =0.45V • Small SMD • Low V f=0.45V • P rrsm • P r rs m R ating (B — M — @ • fü r

3fs 4a

Abstract: smd DIODE 3FS smd diode marking 3fs
Contextual Info: Schottky Barrier Diode Single Diode O U T L IN E w n n w D3FS4A U nit! mm P a c k a g e : 2F Weight 0.16g Typ •hy - K - 7 - y 4 0 V 2 .6 A / C arhode m ark Feature I m • Small SMD • Low Vf=0.45V • Prbsm Rating • /JvS yS M D • f f i V f = 0.45 V

D1FS4N

Abstract: G1VL8 KP4F12 D3FJ10 KL3Z18 K1VP24 1000cy DL04-18F1 KU4F8 smd 1f
Contextual Info: Ref. No. 84-119e November 13, 2006 Messrs. Request for Acceleration of Switching the Plating Type for Two-Terminal SMD Diodes Dear Valued Customer, We asked our customers the switching to Sn plating in our letter dated July 7, 2005 Ref. No. 83-033 and, thanks to your cooperation, the progress of the transition is much faster than expected.

AX057

Abstract: 0/AX057
Contextual Info: SCHOTTKY BARRIER DIODES High-frequency rectifying ITO-220 Single Diodes M1F M2F 1F 2F E-pack AX057 AX078 Absolute Maximum Ratings VRM IFSM IO Type No. ★ ★ ★ ★ D1NS4 6 M1FP3 M1FH3 M1FM3 M1FS4 6 D1FS4 6 D1FP3 D1FS4A D1FH3 D1FM3 D2S4M 6M S2S6M D2FS4 6

ddmm.mmmm

Abstract: EB-A801-P NMEA - 0183 protocol GPS NMEA 0183 protocol GPS Evermore nmea 0183-V2 NMEA-0183 6E SMD CODE EB-A801
Contextual Info: EB-A801-P GPS Engine Board EverMore EB-A801-P is a high sensitivity, low power, SMD type GPS Module, This product is based on Atmel chipset in 16 channel GPS receiver’s solution. The GPS module receiver will track up to 16 satellites at a time while providing

ir 19 831

Abstract: SF20L60U D1NL20U AX057 M1FL20U
Contextual Info: SUPER FAST RECOVERY DIODES High-frequency rectifying STO-220 M1F 1F E-pack Single Diodes 2F VRM IO Absolute Maximum Ratings Type No. 200 400 200 200 400 200 400 200 400 200 400 600 200 600 200 400 600 200 400 200 600 200 400 600 600 300 600 200 200 600 600

Contextual Info: LP3990 www.ti.com SNVS251H – MAY 2004 – REVISED OCTOBER 2008 LP3990 150mA Linear Voltage Regulator for Digital Applications Check for Samples: LP3990 FEATURES APPLICATIONS • • • • • • • 1 2 1% Voltage Accuracy at Room Temperature Stable with Ceramic Capacitor

LM340T5

Abstract: capacitor 476 SMD 6078B smd transistor A6a dale resistor data sheet DIODE 1N4001 SMD resistor smd A6A smd transistor 2f VALOR lan transformer
Contextual Info: DUMBHUB REV C Partslist Monday, March 04, 1996 ite m Referance Qty Devaice Device Description Package Vendor Vendor PN 1 C1 1 Capacitor ELEC_107 515D Sprague 2 10 Capacitor .01MF COG Ceramic Capacitor CC1812 KEMET 3 C15,C1921,C2326,C29-30 C2 515D107M016A A6A