SMD 2A IC Search Results

Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1284 TO-252 Unit: mm Low on-state resistance 0.40 @VGS=4V,ID=2A +0.8 0.50-0.7 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 Built-in G-S Gate Protection Diode +0.15 0.50-0.15 +0.2 9.70-0.2

SMD BR 17

Abstract: SMD BR 2SC3443 2SA1363 smd transistor 2A transistor smd marking SMD BR 42
Contextual Info: Transistors SMD Type High Current Drive Applications 2SA1363 Features High hFE : hFE = 150 to 800 High Collector Current IC = -2A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3443 Absolute Maximum Ratings Ta = 25 Symbol

SMD TRANSISTOR MARKING 2A

Abstract: MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD 1A TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type Low VCE sat Transistor 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

smd marking mp

Abstract: marking mp dc dc smd marking smd marking m_p smd marking UP smd transistor 2A smd transistor MARKING 2A
Contextual Info: Transistors SMD Type Digital Transistors HR1A3M Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

npn smd 2a

Abstract: smd transistor 2A smd 2a transistor 2SC4115 smd transistor 560
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SC4115 Features Low VCE sat :VCE(sat) = 0.2V (Typ.) IC / IB = 2A / 0.1A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage VCBO 40 V collector-emitter voltage

Contextual Info: SMD Type Product specification HR1F3P Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: SMD Type Product specification HR1A4M Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: SMD Type Product specification HR1L3N Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

SMD TRANSISTOR MARKING BF

Abstract: bf TRANSISTOR smd hFE-150 SMD TRANSISTOR BF marking be smd transistor marking 017 2SC3443 transistor smd bf BF Marking 017V
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC3443 Features High hFE=150 to 800. High collector current Ic=2A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTC3205 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1

WY smd transistor

Abstract: SMD TRANSISTOR MARKING wy
Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1

Contextual Info: Transistors SMD Type Product specification FZT690B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Very low equivalent on-resistance; RCE sat 125mÙ at 2A. +0.1 3.00-0.1 Gain of 400 at IC=1 Amp. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3

2SD1760

Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1760 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 IC = 2A, IB = 0.2A . +0.28

smd transistor 2A

Abstract: smd 2a transistor transistor smd 2a ciss 2SK1284
Contextual Info: IC MOSFET SMD Type MOS Field Effect Power Transistor 2SK1284 TO-252 Unit: mm Low on-state resistance 0.40 @VGS=4V,ID=2A +0.8 0.50-0.7 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 Built-in G-S Gate Protection Diode +0.15 0.50-0.15 +0.2 9.70-0.2

Contextual Info: Transistors SMD Type Product specification FZT753 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low saturation voltage +0.1 3.00-0.1 Excellent hFE specified up to 2A +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector

Contextual Info: Transistors SMD Type Product specification FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Diode BFT smd

Contextual Info: Schottky Barrier Diode mtmm o u t l in e Single Diode D1FP3 30V 2A Feature • /JvgySMD Small SMD Ultra-Low V f= 0.4 V • Î b V f=0.4V Main Use • Reverse connect protection for DC power source • DC OR-output • D C th ^ O R ffl • DC /D C • DC/DC Converter

A6062

Abstract: voltage controlled oscillator circuit with op amp P-DSO-28-4 NEOSID 22 vogt* 2.1 VOGT balun smd Lo2 neosid GPS05123 GPS05389
Contextual Info: GSM Receiver Circuit PMB 2401 Preliminary Data Bipolar IC Features ● Heterodyne receiver with demodulator ● Down mixing from 900 MHz receiver band to the base ● ● ● ● ● ● ● ● ● ● ● ● band Demodulation and generation of I/Q-baseband

VLMC3100

Contextual Info: VLMC310. Vishay Semiconductors Low Current SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Compatible with automatic placement equipment e3 • EIA and ICE standard package • Compatible with infrared, vapor phase and wave solder processes according to CECC 00802

Contextual Info: VLMB41. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • High efficient InGaN technology • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave solder processes acc. to CECC 00802 and J-STD-020 • Available in 8 mm tape reel

Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1254S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25

smd 3535 led strip

Contextual Info: VLMPG31L1M2 Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • Lead Pb -free device • SMD LEDs with exceptional brightness • Luminous intensity categorized e3 • Compatible with automatic placement equipment • EIA and ICE standard package • Compatible with IR-Reflow, vapor phase and wave

Contextual Info: VLMPG31L1M2 Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • Lead Pb -free device • SMD LEDs with exceptional brightness • Luminous intensity categorized e3 • Compatible with automatic placement equipment • EIA and ICE standard package • Compatible with IR reflow, vapor phase and wave

Contextual Info: VLMF3100 Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement equipment • EIA and ICE standard package • Compatible with IR reflow, vapor phase