SMD 2817 Search Results

SMT-R000

Abstract: smd 2817
Contextual Info: SMT-R000 Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values < 0.2 mOhm Temperaturkoeffizient Temperature coefficient ca./approx. 3800 ppm/K Temperaturbereich

Precision Resistors

Abstract: SMT resistor
Contextual Info: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 4 mOhm - 4 Ohm Toleranz Tolerance 0.5 %, 1 %, 5 % Temperaturkoeffizient Temperature coefficient

SMT resistor

Abstract: smd 2817 isabellenhutte SMT
Contextual Info: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 4 mOhm - 2 Ohm Toleranz Tolerance 0.5 %, 1 %, 2 %, 5 % Temperaturkoeffizient MANGANIN Temperature coefficient (tcr)

smd 2817

Abstract: isa-plan smd R004
Contextual Info: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 4 mOhm - 2 Ohm Toleranz Tolerance 0.5 %, 1 %, 2 %, 5 % Temperaturkoeffizient MANGANIN Temperature coefficient (tcr)

isabellenhutte smt

Abstract: 210B isabellenhutte isabellenhutte precision resistor SMT resistor smd 2817
Contextual Info: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors TECHNISCHE DATEN / TECHNICAL DATA Widerstandswerte Resistance values 4 mOhm - 2 Ohm Toleranz Tolerance 0.5 %, 1 %, 2 %, 5 % Temperaturkoeffizient MANGANIN® Temperature coefficient (tcr)

Contextual Info: SMT Bauform / Size : 2817 ISA-PLAN - SMD Präzisionswiderstände / SMD precision resistors TECHNISCHE DATEN / TECHNICAL DATA Widerstandswerte Resistance values 4 mOhm - 2 Ohm Toleranz Tolerance 0.5 %, 1 %, 2 %, 5 % Temperaturkoeffizient MANGANIN® Temperature coefficient (tcr)

transistor SMD making code 3f

Abstract: A564A D-71254 sdars TDFM3A 2 F transistor dab radio Dielectric Filter 2442 2 pole TDFM2B-1472H-10 TDFM2B-915E-10
Contextual Info: Chip Dielectric TDF S eries TDF 2 Pole SMD TDFM (2, 3, 4 Pole SMD) TDFS (2, 3, 4 Pole SMD) Meeting Your Needs Meeting Your Needs 1 Chip Dielectric Filters Meeting Your Needs TDF Description CONTENTS Chip Dielectric Filters Dimensions . 2

3773 SMD

Abstract: 142012 132101 4221 739 76118 34695 1815 smd 58779
Contextual Info: .049 .008 .079 .008 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C THERMAL TIME CONSTANT: 60 SEC MAX DISSIPATION CONSTANT: 4 mW/C POWER RATING: 400mW AT 25C, DERATE TO 125 NOTES: SMD 0805 PACKAGE .047 .008 DRAWN

S1365

Contextual Info: SAW Bandpass Filter 250651B 1. Features z IF Bandpass Filter z Low-Loss Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions

3773 SMD

Abstract: 142012 76118 202F CMM0805
Contextual Info: .049 .008 .079 .008 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 2% NTC= -4.0 %/ C OPERATING TEMPERATURE: -40C TO 125C THERMAL TIME CONSTANT: 60 SEC MAX DISSIPATION CONSTANT: 4 mW/C POWER RATING: 400mW AT 25C, DERATE TO 125 NOTES: SMD 0805 PACKAGE .047 .008

beta 3435

Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
Contextual Info: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1012 R07DS0317EJ0400 Rev.4.00 Jan 10, 2014 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1016 R07DS0318EJ0300 Previous: REJ03G1327-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.