SMD 1203 5 Search Results

1202 smd diode

Abstract: 304N diode e 1205 smd 1203 5 DSA0010574 CMBD1201 CMBD1202 CMBD1203 CMBD1204 CMBD1205
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD1201, 1202, 1203 CMBD1204, 1205 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, are all single diodes CMBD1203 is a dual diode, in series

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CMBD1201, 1202, 1203 CMBD1204, 1205 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, are all single diodes CMBD1203 is a dual diode, in series

1SS134 ROHM

Abstract: ROHM 1SS292 1SS139
Contextual Info: $ < K /D io d es M 3 . -f y ^ > *7 $ - i $ — K /S w itc h in g Diodes • S & J f X 'f K /H ig h - S p e e d S w itching Diodes m Type B E S S IE Vr V i1 EE Cond. V f (V) Max. I f (mA) Package Page 1S2471 80 1.2 100 D O -35/S C -40 1187 1S2472 50 1.2 100

Contextual Info: 页码，1/7 Products Products Product Name : Smd Power Choke Add to Inquiry Cart Features: High current and inductance capacity. Varios high power inductors are superior to be high saturation for surface mounting. Applications: Power supply, OA equipment, LCD TV set, notebook, computer, portable communication,etc.

BMR 603

Abstract: ericsson BMR 610 49 ericsson BMR BMR6
Contextual Info: Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EFEIDEN SEC/S Thomas Deng Approved BMR 603 EAB/FJB/GKF SEC/D (Julia1203/1 You) (Natalie Natalie) 1 (1) (4) No. 001521/1301-BMR EN/LZT146393 603Technical

PKR 2113A SI

Abstract: MACRODENS 4918B PKR 4910A S PKR 4211 PKR 2111A PI spb 640 pkr 5611 pkr 4221A SI BMR 640 5007 series
Contextual Info: Ericsson Internal 1 2 Prepared (also subject responsible if other) No. SEC/S Stella Song 2/12012-BMR 640 Uen Approved Checked Date Rev SEC/S [David Xie] 2010-11-18 A For Your Information Sales and FAE world-wide Receiver All customers Reference PKR PKD-E PB Option Discontinuation - Last time buy

NDTS

Abstract: kdc_ndts NDTD1215C
Contextual Info: NDTS Series www.murata-ps.com Isolated 3W Single Output DC/DC Converters SELECTION GUIDE FEATURES „ RoHS compliant „ Industry standard footprint „ Single isolated output „ Short circuit protection „ Operating temperature range –40°C to +85°C „ Low profile 24 pin case

Contextual Info: NDTS SERIES Isolated 3W Single Output DC/DC Converters SELECTION GUIDE FEATURES n RoHS compliant n Industry standard footprint n Single isolated output n Short circuit protection n Operating temperature range –40°C to +85°C n Low profile 24 pin case Order Code

NDTS0503C

Abstract: ndtd1215c ndts2405c NDTS0515C ndts4805c ndts48
Contextual Info: NDTS Series Isolated 3W Single Output DC/DC Converters SELECTION GUIDE FEATURES n RoHS compliant n Industry standard footprint n Single isolated output n Short circuit protection n Operating temperature range –40°C to +85°C n Low profile 24 pin case n 2:1 Wide input range

TLE4941-1C

Abstract: piezo air pressure sensor IC hall sensor smd 80 L TLE4990 Programming Guide shock sensor airbag siemens 4 Pin SMD Hall sensors KP110 P-SOT-23 TLE4942-1C tle4941c
Contextual Info: 2003191_Selection_Guide_16 21.07.2004 17:50 Uhr Seite 3 Pressure Sensor ICs – Hall ICs – Temperature Sensors Converting ENVIRONMENT to Data Complete AUTOMOTIVE Sensor Solutions w w w. i n f i n e o n . c o m / s e n s o r s Never stop thinking. 2003191_Selection_Guide_16

Contextual Info: Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310E General Description Features The AP4310E is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies. Op Amp • Input Offset Voltage: 0.5mV

transistor 131

Abstract: MRF18060ALR3 transistor Z6 MRF18060A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18060A

Abstract: transistor 6 pin SMD Z2 BC847 GSM1800 LP2951 MRF18060 MRF18060ALR3 MRF18060ALSR3 smd z5 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from

MEJ1S1203SC

Contextual Info: MEJ1 Series www.murata-ps.com 5.2kVDC Isolated 1W DC/DC Converters FEATURES „ Basic/supplementary isolation to UL 609502 „ UL60601 3rd Ed recognition2 „ UL 94V-0 package material Single „ Single and dual outputs „ SIP package style „ 5.2kVDC isolation

NDTS4805C

Abstract: NDTS0503C ndts2405c NDTS0505C NDTS2403C
Contextual Info: NDTS SERIES Isolated 3W Single Output DC/DC Converters SELECTION GUIDE Order Code FEATURES n RoHS compliant n Industry standard footprint n Single isolated output n Short circuit protection n Operating temperature range –40°C to +85°C n Low profile 24 pin case

transistor smd ALG

Abstract: r23 transistor HM79-10100LFTR7 transistor smd ALG 33 HICAL HM00-A5861LF PoE adapter circuit diagrams SMD ZENER DIODE u6 transistor smd ALG c1 SIL6029
Contextual Info: Engineering Prototype Report for EP-86 – 6.6 W Multi-Class Powered Device PD for Power over Ethernet (PoE) Using DPA-Switch (DPA423G) Title Specification Input: 33-57 VDC, Output: 3.3 V / 2.0 A Application PoE Class 2 PD – Including IEEE802.3af Compliant Interface Circuit

Contextual Info: Application Note: W3070 Ceramic Dual Band Monopole Antenna. Confidential. Preliminary 07/09 1 Application note Ceramic Dual Band Monopole Antenna EGSM900 and PCN1800 10 mm x 3.2 mm x 2 mm Ceramic Chip Antenna Ground Cleared Under Antenna: Version 1: 25 mm x 10 mm

smd transistor 927

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts MRF18060A
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

motorola rf Power Transistor obsolete

Abstract: MRF18060A
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

RF POWER TRANSISTOR NPN, motorola

Abstract: MRF18060 MRF18060A
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18060A

Contextual Info: Document Number: MRF18060A Rev. 11, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from

Z1 Transistor

Abstract: smd transistor marking j2 smd transistor marking z3 465A MARKINGS MRF18060A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

NDTD

Abstract: kdc_ndtd
Contextual Info: NDTD Series www.murata-ps.com Isolated 3W Wide Input Dual Output DC/DC Converters SELECTION GUIDE Order code FEATURES „ RoHS compliant „ Industry standard footprint „ Power density 0.90W/cm3 „ 2:1 Input range, 3W output power, minimum 3:1 input range with power derating to 2W

DEMO 0365 R

Abstract: SMD Transistor z6 Transistor z1 MRF18060A transistor smd z3 BC847 SOT-23 PACKAGE 0805 smd z5 transistor 927 SOT23 GSM1805 LP2951
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from