SMB 1BL Search Results

1bl3

Abstract: diode 1bl3 MBRS130L on 1bl3
Contextual Info: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*

Contextual Info: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*

1bl3

Abstract: diode 1bl3 JEDEC DO-214AA DO-214AA package power rating 18L3 CBVK741B019 F63TNR F924 MBRS130L SS22
Contextual Info: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA COLOR BAND DENOTES CATHODE TOP MARK: 1BL3 1.0 Ampere Schottky Power Rectifiers

diode 1bl3

Abstract: 1bl3 MBRS130LT3 5M MARKING CODE SCHOTTKY DIODE marking code 1BL3 schottky diode SMB marking code 120 AS 031 1BL3 544 MBRS130LT3G on 1bl3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

1bl3

Abstract: on 1bl3 diode 1bl3 mma130 MBRS130L
Contextual Info: MBRS130L DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

KS57C2616

Abstract: LC5012 64 pin IC microcontroller LCD ic 555 timer 10 minute buzzer obo 112 KS57C2516
Contextual Info: KS57C261& 4-BIT CMOS Microcontroller ELECTRONICS „ J ^ , Product Specification OVERVIEW The KS57C2616 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core. With its up-to-896-dot LCD direct drive capability, flexible 8-bit and 16-bit timer/counters, and

T4 1060

Abstract: KS57C4004 sbr 1033 BSC23
Contextual Info: KS57C4004 4-BIT CMOS Microcontroller ELECTRONICS Ploduct specification OVERVIEW The KS57C4004 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an A/D converter, LED

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features

Contextual Info: FAIRCHILD S E M IC O N D U C T O R tm MBRS130L SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

diode 1bl3

Abstract: 1BL3 on 1bl3 G3060 Mark 1BL3 MBRS130L
Contextual Info: MBRS130L FAIRCH.LD MICDNDUCTQR T m DISCR^CPH ro“ SIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

1bl3

Contextual Info: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

diode 1bl3

Abstract: MBRS130LT3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: MBRS130LT3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS130LT3

Abstract: 403A-03
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

1bl3

Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

1BL3 marking code

Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: KS57C2202 4-BIT CMOS Microcontroller ELECTRONICS Product Specification PRODUCT OVERVIEW The KS57C2202 single-chip CMOS microcontroller has been designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-16-digit LCD direct drive capability, a melody generator with

Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: K S57C 3016 4-BIT CMOS Microcontroller ELEC TR ONIC S Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digit LCD

diode 1bl3

Abstract: 1bl3 on 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3 MBRS130LT3 marking CASE 403A
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: 1bl3 1BL3 marking code MBRS130LT3 diode+1bl3 on 1bl3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL