SM-180 DIODE Search Results

IG 2200 19

Contextual Info: Rectifier diodes Type Vrrm V r sm I f r u SM = V rrm If-SM / i2dt 10 m s, 10 ms, t. A V D 121 N D 121 K D 150 N 800 1200 1800 2000 800 1200 1800 2000 2800 3200 kA 360 1400 mû. 2.6 kA2s 33.8 D 255 N 1400 330 2.4 28.8 3600 420 3.7 68.5 t v, t., ir,i. 180°el

dt61n

Abstract: dt250n DT18N td18n
Contextual Info: EUPEC MIE D • 3MD35T7 DOGDiaD STI ■ Thyristor-diode-modules for current source inverters Type Vdrm Vrrm TRM SM dv/dt cr ^ th J C yp- DIN EC 747-6 180 °el sin. ns V/flS 50 100 di/dt)cr /'i2dt tavm/Ic 10 ms, 10 ms, VJ V] max 180 °el sin. VJ = v] max vj max

dd 76 N powerblock

Abstract: powerblock dd 82 S 800 powerblock DD 76 N 1200 PB20S
Contextual Info: Fast Diode Modules Type Schnelle Dioden-Module V RRM V Ifrm sm Ifsm ö3dt I f AV m / T c V TO A A A2s A/°C V 10 ms, 10 ms, T"v| max Tvi max ,103 V R SM = VRRm +100V (50Hz) rT m Irm A °c /w Tv,= Tv,= Tv,= 180° el Tvj max Tvi max max -di/dt = sin outline

Contextual Info: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It rm sm A D iode (Thyr.) kA 10 ms, J ¡2dt kA2s 10 ms, ^vj max 1,40 It sm It A V M ^ c V (T O ) V ^vj max A/°C 180° el sin ^vj max 9,8 60/85 ri­ ma (di/dt) or tq MS (di/dt) or V/ps DIN IEC

D1809

Abstract: 2040.2590 68 4401 D1029 D1030 D1049 D1069 D1800 D452N
Contextual Info: Rectifier Diodes Type V rrm Ifrm sm Ifsm V A kA 10ms, 1^jmax V r SM = Vrrm + 100 V 50V 1) J i2d t A2s I fA V M ^ C V (T O ) It RthJC tvj max A /°C V m£2 °c/w °c 180° el sin 1 0 m S , t^jmax tvi = tv, = •103 ^vj max ^vj max outline D 121 N 800.2000

Contextual Info: ZMUIOO . Z M U 180 ^Cathode Mark 1 J Silicon Planar Zener Diodes for use in stabilizing and clipping circuits with higher power rating. — 1 The Zener voltages are graded according to the international E 12 standard. Sm aller voltage tolerances on request.

EUPEC DD 104 N 16

Abstract: EUPEC DD 105 N 16 L EUPEC DD 31 800 EUPEC DD 600 eupec dd 76 n 1200 EUPEC DD 171 N EUPEC DD 89 DD 85 N 1600 EUPEC DD 105 N 16 157000
Contextual Info: Type V rrm V r sm 'frm sm = V r rm blE D EUPEC Rectifier diode modules If s m / i 2d t Ifa vm ^ c 34Q32T? V TD Tt R th JC GEH « U P E C R thC K •tvj m a x Outline + 100 V A V 10 ms, 10 ms, t vj = tv i = ty j m ax tv j max f'.’j max fv j max 180 “el

BYS 045 v 72

Abstract: BYS 045 bys 26-45 bys 27-45 DS17 BYS 26-90 BYS 21-45 bys 22-50 SCHOTTKY bys 50 BYS 045 v 75
Contextual Info: Overview Diodes in Disk Housings Rectifier Diodes Type V rrm V V rsm Ifrm sm I f SM Ji2d t IFA V M / t c V TO rT A kA A 2s A fC V m fi 10 ms, = V RR!.1 + 100 V (50V) 1) . T "v jm a x — T vj m ax R th J C ° c /w T , m ax o u tlin e °C 180° el sin

T 698

Contextual Info: -as" :hyris:ors "ype V drm Itrm sm Its m / ¡ 2dt ^TAVM^C V TO rT (di/dt)cr *q (dv/dt)cr Vqt Igt RthJC DIN IEC 747-6 tvj = 25 “C tvj = 25 °C 180 °el sinus V mA °C/W °c tvj max Outline Vrrm 10 ms, 10 ms, tvj max tvj max 180 °Bl sin. t,j = tvj ma, tvj =

Contextual Info: □ IXYS MCC60 Thyristor Module TRMS •TAVM V RRM, DRM Preliminary data V RSM V RRM V DSM V DRM V V 1700 1600 Conditions I t RMS j I f r m s T vj - T Vjm T c = 85°C ; 180° sine I t SM! I f SM l2dt T vj = T Vjm V R= 0 t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine

D-68623

Abstract: d 966 ixys 047
Contextual Info: □ IX Y S Advanced Technical Data Power Schottky Rectifier Symbol Test Conditions DSS10 Maximum Ratings per diode ^FRMS Tc = 135°C; rectangular, Uav t U sM = 10 ms 13 A; L d = 0.5 (50 Hz), sine = 180 |aH; TVJ = 2 5 °C; non repetitive Eas l AS = lAR VA =1.5 x VRRM; f=10 kHz; repetitive

SP5LFG

Abstract: sp5lf SM3f SM3F - HVCA SP5L HVCA SM3FG SP5LG
Contextual Info: HIGH VOLTAGE SURFACE MOUNT DIODES – SM & SP SERIES FIGURE 94 .160 .180 .110 .117 .101 .112 .065 .094 .204 .220 .030 .060 .008 .067 .088 .02 8.00 5.90 8.60 6.30 FIGURE 95 0.20 0.50 2.74 2.84 4.06 4.57 7° 0.61 1.65 2.13 2.85 2.05 7° 1.00 1.30 1.70 2.21 All dimensions in mm

SM3f

Abstract: SM3FG SP5LG sp5l SM3F - HVCA SP5S Sp5l - HVCA HV Component Associates HVCA
Contextual Info: HIGH VOLTAGE SURFACE MOUNT DIODES – SM & SP SERIES FIGURE 94 .160 .180 .110 .117 .101 .112 .065 .094 .204 .220 .030 .060 .008 .067 .088 .02 8.00 5.90 8.60 6.30 FIGURE 95 0.20 0.50 2.74 2.84 4.06 4.57 7° 0.61 1.65 2.13 2.85 2.05 7° 1.00 1.30 1.70 2.21 All dimensions in mm

Contextual Info: □ IX Y S Rectifier Diode DSI 2x55 IFAVM = 2x56 A V rrm = 1200-1600 V Preliminary Data vR SM V 1300 1700 vR AM V 1200 1600 Conditions ^FRMS 'favm 'fsm TVj = Tvjm Tc =80°C; 180° sine TVJ = 45°C; :=> ° - |— 120 56 A A t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine

Contextual Info: s e M IK R D N V r sm Ifrm s V rrm SEMIPACK 2 maximum values for continuous operation 450 A Ifa v V Fast Diode1* Modules (sin. 180; Tease = 85 °C; 50 H z) 220 A 1000 SKKE 301 F 10 1100 SKKE 301 F 11 1200 SKKE 301 F 12 Symbol Conditions SKKE 301 F Preliminary data

Contextual Info: SEM IKRON V r sm I fr m s maximum values for continuous operation V rrm 110 A SEMIPACK 2 Fast Diode 1) Modules I fa v (sin. 180; Tease = 65 °C ; 50 Hz) 70 A V SKKD 60 F 1500 SKKD 60 F 15 1600 SKKD 60 F 16 SKKD 60 F Units 58 70 A A Tvj = 25 °C; 10 ms

semikron skkt 41

Abstract: T42B SKKT 41/12E
Contextual Info: SEMIKRON V r sm V rrm dv/ SEMIPACK 1 Thyristor/ Diode Modules It r m s (maximum value for continuous operation 75 A V drm dt)cr It a v (sin. 180; Tease = 68 °C) V V/|as V 500 400 500 48 A - - SKKH 41/04 D - 700 600 500 SKKT 41/06 D SKKT 42/06 D SKKH 41/06 D

thyristor tt 250 n 16

Abstract: thyristor TD 25 N ot 3000 DI 210 dt61n dt250n
Contextual Info: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,

ITT DIODE 210

Abstract: 81 210 W 20 TD92N ITT DIODE 128 dt61n dt250n IC 7476
Contextual Info: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,

Contextual Info: S E M IK R O N V r sm V r rm dv/ SEMIPACK 1 Thyristor/ Diode Modules It r m s (maximum value for continuous operation 95 A V d rm dt)cr ITAV (sin. 180; Tcase = 74 °C) V V/|as V 500 400 500 60 A - - SKKH 56/04 D - 700 600 500 SKKT 56/06 D SKKT 57/06 D

AS150A

Abstract: SKMT91 diode T-91 SKMT912
Contextual Info: SEMIKRON V r sm V r rm SEMIPACK 1 Thyristor/ Diode Modules It r m s maximum value for continuous operation (dv/ 150 A V d rm dt)cr ITAV (sin. 180 ; Tcase = 85 °C) V V/|as V 95 A 500 400 500 700 600 500 S K KT 91/06 D SKKH 91/04 D - SKKH 91/06 D SKKH 92/06 D

Contextual Info: s e MIKROn Fast Recovery Rectifier Diodes maximum values for continuous operation 30 A 47 A 72 A V r sm I fr m s V r rm IfA V (sin. 180; Tease = 85 °C; 50 Hz) 48 A SKR20 F SKR 31 F SKR 48 F V 20 A 31 A 1000 SKR 20F10 SKR 31F10 SKR 48F10 1200 SKR 20F12 SKR 31F12

eupec rectifier

Abstract: D1809 0 280 130 037
Contextual Info: EUPEC ‘H E D Rectifier diodes Type Ifrm sm V rrm V A • !fsm 3 4 0 3 ^ 7 DDDD11D 3ST ■ UPEC / ¡ 2dt I favm / I c V TO Tt R th jc T-OItv j m a x 10 ms, 10 ms, tv, = tv, = 180 “el tv; max tvj max tvj max tv] max sin. kA A2s V mQ K/W •c A /'C Outline

dd 76 N powerblock

Contextual Info: Rectifier Diode Modules Type V rrm Ifr m sm V A Ifsm A 10 ms, VRSM = VRRM + 100 V Jpdt IfavM / T c A2s A/°C 10ms, T vjmaXi T vjm a x *103 28,8 V TO V T‘ V] =T1v) max rT m fi T„; RfhCK T v j m ax ° c /w °C /W °c o u tlin e 180° e! sin ^ v| rr a <