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    SKM150GB12T4G Search Results

    SKM150GB12T4G Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SKM150GB12T4G
    		Semikron IGBT4 Modules Original PDF 490.09KB 5
    SF Impression Pixel

    SKM150GB12T4G Price and Stock

    SEMIKRON

    SEMIKRON SKM150GB12T4G

    Igbt, Half Bridge, 1.2Kv, 223A, Module; Continuous Collector Current:223A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Screw; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM150GB12T4G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM150GB12T4G Bulk 2 1
    • 1 $216.97
    • 10 $193.10
    • 100 $193.10
    • 1000 $193.10
    • 10000 $193.10
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    TME SKM150GB12T4G 1
    • 1 $217.24
    • 10 $174.25
    • 100 $174.25
    • 1000 $174.25
    • 10000 $174.25
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    Richardson RFPD SKM150GB12T4G 1
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    Vyrian SKM150GB12T4G 44
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    SEMIKRON SKM150GB12T4G (22892050)

    SEMITRANS; 1200V; 200A
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    RS SKM150GB12T4G (22892050) Bulk 1
    • 1 $216.97
    • 10 $195.27
    • 100 $195.27
    • 1000 $195.27
    • 10000 $195.27
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    SEMIKRON SKM150GB12T4GW

    POWER IGBT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD SKM150GB12T4GW 1
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    SKM150GB12T4G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SKM150GB12T4G PDF

    Contextual Info: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM150GB12T4G VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		SKM150GB12T4G PDF

    SKM150GB12T4G

    Abstract: Diode semikron 103
    Contextual Info: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SKM150GB12T4G App2009 SKM150GB12T4G Diode semikron 103 PDF

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c PDF