SKM 300 CIRCUIT Search Results

D73 -Y

Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
Contextual Info: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700

SKM 200 CIRCUIT

Contextual Info: SKM 300 GB 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C

Contextual Info: SKM 300 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C

skm400gal125d

Abstract: SKM400GB125D
Contextual Info: SKM 400GB125D Tc = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT VCES Tj = 25 °C 1200 V IC Tj = 150 °C 400 300 A A ICRM ICRM=2xICnom 600 A ± 20 V Tj = 125 °C 10 µs Tcase = 25 °C Tcase = 80 °C 390

Contextual Info: SKM 300 GB 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3

Contextual Info: SKM 300GB123D Tc - 25 °C, unless otherwise specified Values Units Absolute Maximum Ratings Symbol Conditions IGBT V CES Tj = 25 °C Tj = 150 °C 1200 v Tcase = 2 5 ”C 300 A = 220 A 400 A ±20 V 10 MS Tcase = 25 °C 260 A = 180 A 400 A Tj = 1 5 0 °C 2200

Contextual Info: SKM 300 GB 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

skm 50 gb 100 d

Contextual Info: SKM 300 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

Contextual Info: SKM 300GB125D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT | Conditions V CES Tj = 25 °C •c Tj = 150 °C 1200 V 300 A = 80 °C 210 A 400 A ±20 V 10 MS T case = 2 5 ° C 260 A = 80 °C 180 A 400 A 1800 A 500 A -4 0 .+ 150

UPS es 550

Abstract: SKM300GB123D
Contextual Info: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600

Contextual Info: SKM 300GB125D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT | Conditions V CES Tj = 25 °C •c Tj = 150 °C Values 1200 V Tcase = 2 5 ° C 300 A = 80 °C 210 A 400 A ±20 V 10 MS Tcase = 2 5 ° C 260 A = 80 °C 180 A 400 A 1800

Contextual Info: SKM 300GB125D T c = 2 5 °C , u n le s s o th e r w is e s p e c ifie d Absolute Maximum Ratings Symbol Conditions IGBT | Values Units V CES Tj = 25 °C 1200 v !C Tj = 150 °C = 2 5 °C 300 A = 80 °C 210 A 400 A ±20 V 10 |JS Tease Tease *CRM lCRM- 2 x l Cnom

SKM 75 GAL 123 IGBT

Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
Contextual Info: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment

SKHI 20

Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Contextual Info: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

skiip 613 gb

Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Contextual Info: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

skm 200 gb 122 d

Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Contextual Info: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity

skm 152 ga 123

Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040

skm 200 GB 12 V

Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC

SKM 400 gal 124 IGBT

Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400

Contextual Info: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms

SKM 300 GA 102 D

Abstract: si 13003 br hc 13003 ml 13003 skm300ga122d semikron diode 200a DDD3717 DDG371B GA102 SKM 300 CIRCUIT
Contextual Info: 013bb71 □□□3710 Iflfl * S E K G S1E D S EM IK R D N SEPIIKRON INC Absolute Maximum Ratings Symbol Values 102 D Conditions1> 1000 1200 1000 1200 300/200 600/400 ±20 1750 -5 5 . . .+150 2 500 Class F 55/150/56 VcES Rge = 20 k iî VCGR Ic Tease = 2 5 / 8 5 ° C

SKM 151F

Abstract: ac drives LS 600 M151A SKM151F drives ls 600 LS9100 resonant inverter for welding SKM 300 CIRCUIT LS-1800 M151A4R
Contextual Info: SKM 151 A4R Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units 500 500 70 / 50 280 / 200 ± 20 780 –40 . +150 (125) 2 500 RGE = 20 kΩ Tc = 25 / 80 °C Tc = 25 / 80 °C AC, 1 min. IEC 60721-3-3

3v100

Abstract: SKM 300 GA 102 D Ga 81 ga 39 diode
Contextual Info: se MIKRO n Absolute Maximum Ratings Sym bol Values . 102 D . 122 D Conditions 11 1000 1200 1000 1200 3 0 0 /2 0 0 6 0 0 /4 0 0 ±20 1750 - 5 5 . . .+150 2 500 V cES O CM II Tease — 2 5 /8 5 C Tease = 2 5 /8 5 °C ICM LU OC lc <3 VcGR V g es Ptot Tj, Tstg