SKM 22 GAL 123 Search Results

SKM 75 GAL 123 IGBT

Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
Contextual Info: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment

skm 152 ga 123

Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040

semikron SKm 123D

Abstract: semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKm 50 GB 123D semikron skm 150 gb 123 skm 50 gd 123 d skm 22 gal 123 SKM 75 GB 123D semikron skm 40 skm 40 gb 123 d
Contextual Info: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment

SKM 200 CIRCUIT

Abstract: B 688
Contextual Info: se MIKRDn Absolute Maximum Ratings Symbol VcES VcGH lc IcM V qes Ptot Tj. Tstg Visol humidity climate V a lu e s | . 1 2 3 D 1 Conditions ' . 123 D 1200 1200 200/150 400/300 ±20 1250 - 4 0 . . .+150(125) 2 500 71 Class F 55/150/56 FWD6) 260/180 200/130

Contextual Info: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms

skm 200 GB 12 V

Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC

SKM 75 GAL 123 IGBT

Abstract: SKM 75 GB 123 SKM 380 skm 50 gb 100 d Semitrans* IGBT GAL 200 gb
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = 25/80 °C

Contextual Info: s e M IK R O n Absolute Maximum Ratings Values Symbol Conditions ' . 123 D Units VcES VcGR lc ICM V ges R ge = 20 k£2 Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms 1200 1200 5 0 /4 0 1 0 0 /8 0 ±20 310 - 4 0 . . .+150 125 2 500 V V p e r IG BT, Tease = 25 °C

skm 152 ga 123

Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C

Semikron SKM 173D

Abstract: SK 200 GAR 125 SKM200GB173 B679
Contextual Info: s e m ik r o n Absolute Maximum Ratings S ym bol VcES VcGR lc ICM V a lu e s C o nd itions 1 U nits 1700 1700 2 2 0 /1 5 0 440 / 300 ±20 1250 - 4 0 . . .+150 125 4000 Class F 55/150/56 Rqe = 20 k ii Tease = 25/80 °C Tease ~ 25/80 °C; tp = 1 ms Vges Ptoi

SKM 75 GB 123

Abstract: semikron skm 150 gal SKM 75 GAL 123 IGBT skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

semikron SKm GAL 123D

Abstract: CASED61
Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm

Contextual Info: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56

semikron skm 300 gar 123

Abstract: skm 300 gar skm 22 gal 123 SKM 300 GB 123 D 300GB-6 SKM 300 GB 12 V
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

skm 152 ga 123

Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
Contextual Info: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms

skm150gb123d

Abstract: semikron IGBT 100A SKM 75 GAL 123 IGBT SKM150GB123
Contextual Info: SEMI KRÖN Absolute Maximum Ratings Sym bol VcES VcGR lc V a lu e s C onditions 1 Units 1200 1200 150 '100 300 / 200 ±20 800 - 4 0 . . .+150 125 2 500 7) Class F 55/150/56 Rge = 20 k£i Tease = 25/80 X Tease = 25/80 X ; tp = 1 ms ICM Vges Plot T|, (Tjtg)

Contextual Info: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode

Contextual Info: 1 back IT S E M IK R D N zurück Absolute Maximum Ratings Symbol VcES VcGR lc ICM Vges Ptot Tj, Tstg Visol humidity climate Values Units Conditions ' 1200 1200 300 / 220 600 / 440 ±20 1660 - 4 0 .+ 1 5 0 (125) 2 500 Class F 40/125/56 Rge = 20 k£2 Tease = 25/80 °C

SKM 300 CIRCUIT

Abstract: SKM 400 gal 124 IGBT D 145 SKM 300 GB 123 D SKM 600 gb semikron skm 150 gb 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

skm 150 gb 122

Abstract: skm 40 gb 124 d lse-b6 GAL10 SKM 121 R skm 100 gb 101 d tic 122
Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol V ces I V cgr lc 1c m ; V ges Ptot Values . 101 D . 121 D . 102 D . 122 D Conditions ' 1000 1200 1000 I 1200 150/10 0 3 0 0 /2 0 0 ± 20 1000 - 55 . . .+150 2 500 C lass F 5 5 /1 5 0 /5 6 R ge = 2 0 k i i

Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc ICM V ges Rge = 20 k£2 T c a s e = 25/80 °C T c a s e = 25/80 °C; tp = 1 ms P to t p e r IG B T , Tcase Units = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc

Contextual Info: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10

B697

Abstract: 10R-A10
Contextual Info: SEMIKRON Absolute Maximum Ratings Symbol VcES VcGR lc ICM VqeS Plot Tj. Ts* Visol humidity climate Rge = 20 k£i Tease = 25/80 “C Tease ~ 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC68T.1 Inverse Diode Tease = 25/80 C If= - lc