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Contextual Info: SKiiP 613GD123-3DUL < '2= 3 ! 6 Absolute Maximum Ratings Symbol Conditions IGBT ># > , ># :! " @ < '2 +&%, = Values Units ('%% A%% B '% > > > $%% +12%, 1&% +*2%, *2%% Inverse diode SKiiP 3 6-pack-integrated
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613gd123-3dul |
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Contextual Info: SKiiP 613GD123-3DUL < '2= 3 ! 6 Absolute Maximum Ratings Symbol Conditions IGBT ># > , ># :! " @ < '2 +&%, = Values Units ('%% A%% B '% > > > $%% +12%, 1&% +*2%, 1*'% Inverse diode SKiiP 3 6-pack-integrated
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613gd123-3dulskf16b-230-1d123-3dul |
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SKCB
Abstract: skcb 2m2-45-3-12 3m3-45-2-12 SKiiP 83 AC 12 i t 1 41046220 SKIIP "2 FOLD" SKIIP85 SKIIP DRIVER SKIIP GD semikron skiip 20
Contextual Info: Modules – Explanations – SKiiP SKiiP gate driver designator D: gate driver Features DU: gate driver with DC-link voltage measurement and over voltage protection • SKiiP: SEMIKRON integrated intelligent Power is a power semiconductor subsystem • SKiiP integrates power semiconductor switches, heat
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th50002m2-45-2-122m2-45-3-122m2-45-4-12+153m3-45-2-123m3-45-3-123m3-45-4-124m7-40-2-124m7-40-3-124m7-40-4-12skcbskcb 2m2-45-3-12skiip 83 ac 12 i t 141046220skiip "2 foldskiip85skiip driverskiip gdsemikron skiip 20
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CALCULATION SemiSel 3.1
Abstract: semikron skiip3 DIN 5463 usage of skiip CALCULATION SemiSel skiip gb 120 semikron skiip vf group semikron skiip 81 AN 15 T B DIN 5463 semikron IGBT, 1200V, 600A, H bridge
Contextual Info: Usage of SKiiP Systems 10. Dezember 2002 Seite: 1 von: 16 Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main features of SKiiP2 and SKiiP3 Systems . 2
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sm/5/fo/000/006/rev00/25v020627calculation semisel 3.1semikron skiip3+8din 5463usage of skiipcalculation semiselskiip gb 120semikron skiip vf groupsemikron skiip 81 an 15 tb din 5463semikron igbt, 1200v, 600a, h bridge
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613GD123-3DUL
Abstract: PX16 bottom12 semikron IGBT skiip 3000kV
Contextual Info: SKiiP 613GD123-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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613gd123-3dulpx16bottom12semikron igbt skiip+13000kv
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SKCB
Abstract: SKiiP 81 AN 15 T1 SKIIP 81 AC 12 I T1 skcb 2m2-45-3-12 semikron skiip3 SKIIP "2 FOLD" 3m3-45-2-12 IGBT driver IC with PWM output SEMIKRON skiip gb 120 CALCULATION SemiSel
Contextual Info: 3. Dezember 2003 Page: 1 von: 26 8VHU 0DQXDO IRU 6.LL3 6\VWHPV Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main Features of SKiiP Systems . 2
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sm/5/fo/000/006/rev00/25v031201skcbskiip 81 an 15 t1+8skiip 81 ac 12 i t1skcb 2m2-45-3-12semikron skiip3skiip "2 fold3m3-45-2-12igbt driver ic with pwm output semikronskiip gb 120calculation semisel
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semikron skiip 400 gb
Abstract: 803GD061-3DUW
Contextual Info: SKiiP 803GD061-3DUW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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803gd061-3duwsemikron skiip 400 gb |
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132GD120-318CTV
Abstract: semikron skiip 20 132-gd120 IC-125A semikron IGBT 150A 600v
Contextual Info: SKiiP 132GD120-318CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin
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132gd120-318ctvsemikron skiip 20132-gd120ic-125a+1semikron igbt 150a 600v
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Contextual Info: SKiiP 513GD172-3DUL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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513gd172-3dul |
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semikron skiip 400 gb
Abstract: semikron skiip 613GD061-3DUL skiip gb 120 PX16
Contextual Info: SKiiP 613GD061-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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613gd061-3dulsemikron skiip 400 gbsemikron skiipskiip gb 120+1px16
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513GD173-3DUL
Abstract: semikron skiip 400 gb semikron skiip 3 skiip gb 120 MKP 357 PX16 SKIIP 125 513GD173
Contextual Info: SKiiP 513GD173-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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513gd173-3dulsemikron skiip 400 gbsemikron skiip 3skiip gb 120+4mkp 357px16skiip 125513gd173
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semikron skiip 400 gb
Abstract: skiip gb 120 semikron IGBT skiip 513GD122-3DUL semikron skiip 3 semikron skiip 31 PX16 semikron skiip 3 gb 120 3000kV 513GD1223DU
Contextual Info: SKiiP 513GD122-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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513gd122-3dulsemikron skiip 400 gbskiip gb 120semikron igbt skiip+6semikron skiip 3semikron skiip 31px16semikron skiip 3 gb 1203000kv513gd1223du
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semikron skiip 400 gb
Abstract: 513GD172-3DUL semikron skiip sensor s33 SKIIP APPLICATION skiip gb 120 PX16
Contextual Info: SKiiP 513GD172-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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513gd172-3dulsemikron skiip 400 gbsemikron skiipsensor s33+3skiip applicationskiip gb 120px16
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342GD120-314CTV
Contextual Info: SKiiP 342GD120-314CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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semikron skiip 400 gb
Abstract: 402GD061-358CTV
Contextual Info: SKiiP 402GD061-358CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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402gd061-358ctvsemikron skiip 400 gb |
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semikron skiip 603GD122-3DUL
Abstract: SKiiP 603GD122-3DUL semikron skiip 31 603GD122-3DUL PX16 SKIIP 12 6pack
Contextual Info: SKiiP 603GD122-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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603gd122-3dulsemikron skiip 603gd122-3dulskiip 603gd122-3dulsemikron skiip 31+2px16skiip 12 6pack
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Semikron sk 51
Abstract: nr. 9181 semikron skiip 83 SKP24 SKiiP2 skiip6 skiip 84 p1003 SK 618
Contextual Info: s e MIKRDN in n o v a tio n + service integrateci intelligent power subsystems Easy paralleling • 2, 3 o r 4 2 -p a c k halfbridge => m a x .1600 A rms o u tp u t current • hom og en ou s current d istrib u tio n Modular power section • 2 -p a c k (halfbridge)
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semikron sk 51nr. 9181semikron skiip 83skp24+5skiip2skiip6skiip 84p1003sk 618
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power diode 200A
Contextual Info: SKiiP 413GD061-3DUL I. Power section 1 * SKiiP413GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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413gd061-3dulskiip413gb061ctpower diode 200a |
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SKiiP613GB061CT
Abstract: skIIP613GB 613GD061-3DUL
Contextual Info: SKiiP 613GD061-3DUL I. Power section 1 * SKiiP613GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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Contextual Info: SKiiP 313GD122-3DUL I. Power section 1 * SKiiP313GB122CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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skiip513gb
Abstract: SKIIP513GB122CT 513GD1223DU
Contextual Info: SKiiP 513GD122-3DUL I. Power section 1 * SKiiP513GB122CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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MKP capacitor
Abstract: SKIIP APPLICATION 803GD061-3DUW
Contextual Info: SKiiP 803GD061-3DUW I. Power section 1 * SKiiP803GB061CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin
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803gd061-3duwskiip803gb061ctmkp capacitorskiip application |
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B6U 380
Abstract: semikron skiip 81 AN 15 T Module SKDH 146 16 Semikron semipont b6u SKDH 115 semikron skd 146 skiip 83 T-sensor 16L1 semikron skd 75
Contextual Info: SEMIPONT 5 SEMIPONT 6 45 mm Compared to SEMIPONT 5, SEMIPONT 6 additionally contains a brake chopper and temperature sensor. 45 mm 17 mm 81 mm 17 mm 100 mm ID = up to 140 A VRRM = up to 1800 V SEMIPONT 5/6 – new innovative packaging with SKiiP technology for bridge rectifier and softstarter.
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16-l116-l163b6u 380semikron skiip 81 an 15 t+8module skdh 146 16semikron semipont b6uskdh 115semikron skd 146skiip 83t-sensor16l1semikron skd 75
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SKiiP 83 AC 12 i t 1
Abstract: SKiiP 83 AC 12 i t skiip613gb121ct sensor s33 skiip613gb12 SKIIP613GB 613GD121-3DUL
Contextual Info: SKiiP 613GD121-3DUL I. Power section 1 * SKiiP613GB121CT per phase Absolute maximum ratings Symbol Conditions 1 Values IGBT and inverse diode VCES VCC Operating DC link voltage VGES IC IGBT, Theat sink = 25 / 70 °C ICM IGBT, tp < 1 ms,Theat sink = 25°C
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613gd121-3dulskiip613gb121ctskiip 83 ac 12 i t 1skiip 83 ac 12 i t+3sensor s33skiip613gb12skiip613gb
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