SJ 76 A Search Results

Contextual Info: FCH041N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 76 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)

f38w

Abstract: 6386D NHG-06 88X64 S476 fdvu
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Contextual Info: 2 4 3 5 7 6 — l X 239 S i g n a l K o n t a k t e 239 signal contacts Kontaktanordnung contact arrangement 98 96 9S29° 86 82 nn 78 7 4 ^ 7 0 , n 66, 62, A 84 80 76 72 68 64 60 58 56 54 52 50 4 8 46 96x 2,5 02,75 i_n O sJ ♦0.05 2 □ = Kon ta k tp o sitio n nicht belegt

Contextual Info: THI S C DRAWI NG IS UNPUBL I SHE D. COPYRI GHT 20 BY REL EASED FOR P U B L I C A T I O N ALL - RI GHTS 20 DIST RESERVED. GE R E V IS IONS 00 DESCRI PTI ON LTR J3 REVISED PER DWN DATE E C O - I 1- 0 0 5 0 3 0 RK I I MAR2011 APVD HMR A C C E P T S #4 S E L F T A P P I N G S C R E W ( E L C O H I - L O T H R E A D C U T T I N G

Contextual Info: 0RWRUROD 03& 9%B ODVK  (UUDWD 6KHHW (6 (YDOXDWLRQ %RDUG 03& 9 AV7UÂCpDÂÉÂ9ƒGCÂwÂ8ƒ†‡wu‡ˆ†Â! ÂwÂ@' $&)ÂUˆ‰ˆˆui†ˆ )VVEXE 7LIIX 4VSHYGX (EXI 6IZMWMSR )7  )ZEPYEXMSRFSEVH 14' :   )VVEXE 7YQQEV]

J505C

Abstract: SJ 76 a 2SJ-05031T13 J-503C
Contextual Info: 3.50 PHONE JACK NEW 2 S J -0 5 0 0 SERIES - 12- M6xP0.5 OLD S J -5 0 0 SERIES -1 1 .7 - OR 0» 3.6» 3.5 1 V -1 0 .7 - -n « î tf> m r ri n W /l COVER 10 PCB LAYOUT BOTTOM VIEW W /0 COVER -o 1 Schematic A£=§ 2 10 W /l SCREW W /l COVER W /0 SCREW

B170008

Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

ST25A

Abstract: 2N904 ST25A transistor 2N905 ST25C ST25C package ST25C transistor 2SC182 2N907A 2N906
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: ARK-LES CORPORATION T l I WATERTOWN, MA CUSTOM ER sy- 1 MRT MIC* T E R M I N A L . FLING S E R R A T E D , #6- # 8-#IO DRAW ING PART NO: 4 0 0 0 -A 4 G 9 8 / STUD 2 3 4 3 PART 5 6 NUMBER DIM. "A" 4000-A4G98-5 7 8 4000-A4G98-6 9 10 u 4000-A4698-7 <2 NO JZ 4000-A4G98-8

in4632

Abstract: IN4619 50 watt zener diode 1n4549 14584 IN4575A 1N4549 1N4550 1N4551 1N4552 1N4553
Contextual Info: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z

2N5417

Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

tea 1601 t

Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

B170007

Abstract: B170008 sk 110 19 20n B170002 b176 SDT8111 B170003 B170004 B170005 B170006
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

SJ 76 A DIODE

Contextual Info: SKM 100GB125DN G% R LS TC+ / * 00 ,6&)7420) 08)%2<2)5 Absolute Maximum Ratings Symbol Conditions IGBT UCQ1 GV R LS TC ?C GV R ISJ TC ?CPY Ultra Fast IGBT Module SKM 100GB125DN 680% ILJJ U IJJ D G%'0) R XS TC XJ D ISJ D [ LJ U GV R ILS TC IJ _0 G%'0) R LS TC

Contextual Info: CARRIAGE PLATES Hepco CM series carriage plates are constructed from extruded aluminium ailoy machined on the important top and bottom faces. A useful range of standard predrilled lengths are available from stock, and special length carriage plates can be

Contextual Info: SKiiP 14NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DT .< .<1Z L/DT -* R HG S<J 45%7* 2&97'8:*7 *B7?: :76 -* R HG VWOX S< -¥ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +

hPND

Contextual Info: • WfT\ 44475Ö4 □OCHb'ia 3T4 ■ H P A HEULETT-PACKAR] / CflPNTS blE J> HEWLETT L Ä I PACKARD B eam L ead PIN D iod es for P h a sed A rrays and S w itch es Technical Data HPND-4018 HPND-4028 HPND-4038 Features 680 27) • Low C ap acitan ce 0.025 pF Maximum at 1 MHz

Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

1N4637

Abstract: IN4620 IN4624 diode 1n4637 1N4639 1N4641 1N4632 1N4644 IN4636 IN4553
Contextual Info: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z

2N5034

Abstract: 2N5036 1713-1202 2N1508 2N2404 2N5034 package B170000 B170001 SG8207A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

A1381 transistor

Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

MA7805

Abstract: 2N2307 2CY38 germanium low power 150mW ST8034 5E29 NS1862 sl RS40 QD401-78 QD402-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,