SILIKRON SEMICONDUCTOR Search Results

TO220 package

Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation TO220 PACKAGE OUTLINE DIMENSION_HS Rev.A www.silikron.com

DFN2X2-6L

Abstract: 043 520 DFN2X2
Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation DFN2X2-6L PACKAGE OUTLINE DIMENSION Symbol A A1 A3 D E D1 E1 K b e L Rev.A Dimension In Millimeters Min Max 0.700/0.800 0.800/0.900 0.000 0.050 0.203REF 1.924 2.076 1.924

DFN3X2-8L

Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation DFN3X2-8L PACKAGE OUTLINE DIMENSION Symbol A A1 A3 D E b L D2 E2 e Rev.A Dimension In Millimeters Nom Max 0.750 0.800 0.050 0.200REF 2.950 3.000 3.050 1.950 2.000 2.050

TSOP-6

Abstract: tsop6 package
Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation TSOP-6 PACKAGE OUTLINE DIMENSION Symbol A A1 A2 b c D E E1 e L θ Rev.A Dimension In Millimeters Min Nom Max 0.935 1.100 0.010 0.100 0.925 1.000 0.250 0.320 0.400 0.100

TSSOP-8

Abstract: TSSOP8 TSSOP8 Package
Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation TSSOP8 PACKAGE OUTLINE DIMENSION Symbol D E b c E1 A A2 A1 e L H θ Rev.A Dimension In Millimeters Min Max 2.900 3.100 4.300 4.500 0.190 0.300 0.090 0.200 6.250 6.550 1.100

SOP-8

Abstract: sop8 Package dimension SOP8 Package
Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation SOP8 PACKAGE OUTLINE DIMENSION Symbol A A1 A2 b c D E E1 e L θ Rev.A Dimension In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700

DFN3X3-8L

Abstract: DFN-3x3
Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation DFN3X3-8L PACKAGE OUTLINE DIMENSION Symbol A A1 A3 D E b L D2 E2 e Rev.A Dimension In Millimeters Nom Max 0.750 0.800 0.050 0.200REF 2.950 3.000 3.050 2.950 3.000 3.050

800-2

Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation SOT-23 PACKAGE OUTLINE DIMENSION Symbol A A1 A2 b c D E E1 e e1 L L1 θ Rev.A Dimension In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150

SOT-23-6L

Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation SOT-23-6L PACKAGE OUTLINE DIMENSION_CD Symbol A A1 A2 b c D E E1 e e1 L θ Rev.A Dimension In Millimeters Min Max 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100

SOT-23-3L

Abstract: dimension symbol
Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation SOT-23-3L PACKAGE OUTLINE DIMENSION Symbol A A1 A2 b c D E E1 e e1 L θ Rev.A Dimension In Millimeters Min Max 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200

TSOP-6

Abstract: SSF3428 DIODE 30V TSOP DIODE 30V TSOP-6
Contextual Info: SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V

SOT23-6

Abstract: SSF3420 marking QG SOT23-6 55A SOT23-6
Contextual Info: SSF3420 D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V

SSFK3204

Abstract: GEMPAK5060
Contextual Info: SSFK3204 D DESCRIPTION The SSFK3204 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =15A RDS(ON) < 8.5mΩ @ VGS=4.5V

SSF2301

Abstract: 2301 marking sot-23
Contextual Info: SSF2301 D DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram

MARKING 33A DIODE SOT23

Abstract: SSF6401 marking 43A sot23
Contextual Info: SSF6401 D DESCRIPTION The SSF6401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram

SSF2816E

Abstract: SSF2816 S-SF2816 2816E
Contextual Info: SSF2816E DESCRIPTION The SSF2816E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

ssf4606

Abstract: SOP-8 4606 inverter 4606 mosfet SOP-8 4606 4606 MOSFET circuit diagram MOSFET 4606 A 4606 SSF4606 mosfet mosfet inverter 4606
Contextual Info: SSF4606 DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS ON and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES

SSF3338

Contextual Info: SSF3338 D DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =4A RDS(ON) < 65mΩ @ VGS=4.5V

SSF3322

Contextual Info: SSF3322 D DESCRIPTION The SSF3322 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =5.8A RDS(ON) < 43mΩ @ VGS=4.5V

SOT23

Abstract: SSF2301B 2301B
Contextual Info: SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES

Contextual Info: SSF2N60D2 Main Product Characteristics: VDSS 600V RDS on 3.7Ω (typ.) ID 2A TO-252 Schematic diagram Assignment Features and Benefits:   Marking and pin Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications

SOT23-6

Abstract: SSF3416 9A SOT23
Contextual Info: SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V

SSF3604

Contextual Info: SSF3604 D DESCRIPTION The SSF3604 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. G S

8205A

Abstract: 8205A TSSOP-8 SSF8205A 8205A tssop 6 SSF8205 8205A 6 pin S 8205A G2 marking "battery protection" 8205A datasheet
Contextual Info: SSF8205A DESCRIPTION D1 The SSF8205A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D2