SILICONE DIODE Search Results

KJR9022E

Abstract: KJR4013E GTO thyristor driver KJR651 KJR9061E silicone low volatile potting G1821 KJR-9010E KJR651E KJR9060E
Contextual Info: Shin-Etsu Liquid Coating Materials for Electronic Devices KJR Series Junction Coating Resins Liquid Type Silicone & Polyimide Silicone for Electronic, Electric and Optical Devices Main Features ●Ultra High Purity ●High Thermal Stability ●High Electrical Stability

HLT22

Abstract: Rosenthal HL-26 HLA130 HLT25 HLT-15 HLA051 GRID Resistors HL025 hl050
Contextual Info: Silicone Coate d HL x x w w w. v i s h a y. c o m Selector Guide Industrial wirewound resistors R e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Industrial Wirewound Resistors Silicone Coated Key Features • A wide range of high power ratings 3 W to 375 W

metal rectifier diode

Contextual Info: Bulletin I0150J 02/03 IR19DDR12L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 19 mm Diameter VRRM Class: 1200 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage 1.32 V

Contextual Info: High g Reliability y Rectifier Diodes silicone diffusion junction type ROHM's unique diffusion process offers high surge resistance in a compact package (2616-size) - ideal for automotive applications. Withstands high voltage and current surges! Withstands high surges

metal rectifier diode

Contextual Info: Bulletin I0151J 02/03 IR24DDR12L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 24 mm Diameter V RRM Class: 1200 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage 1.35 V

IR24CDR

Abstract: ir24cdr.l ir24c
Contextual Info: Bulletin I0303J rev. A 02/03 IR24CDR.L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 24 mm Diameter VRRM Class: 400V - 800 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage

Contextual Info: Cryogenic Temperature Transmitters For CY7 Series Diode Sensor and Platinum RTD Elements MADE IN USA Model CYTX231P-115 with Enclosure $ 645 Basic Unit ߜ Models for Silicone Diode or Platinum RTD Elements ߜ Accuracy ±0.07K at 4.2K Factory Calibration in

BCS5030G1

Abstract: color sensitive PHOTO TRANSISTOR BCS2015G1 8020s Series eb-51b 8020s
Contextual Info: 1/3 Visible Radiant Optical Sensors Photo-diode Type BCS2015G1/5030G1 Series Conformity to RoHS Directive The surface-mount type optical sensor that is highly sensitive only to ambient light with an amorphous silicone semiconductor photodiode on the glass substrate.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP ATTENTION Part Number: AA3535SEL1Z1S Hyper Orange OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

metal rectifier diode

Contextual Info: Bulletin I0305J rev. A 02/03 IR19EDR.L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 19 mm Diameter V RRM Class: 1600 to 2500 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage

SMAL850

Contextual Info: SMAL850 TECHNICAL DATA High Power LED Array, 60 chips, SMD ALGaAs SMAL850 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on an AIN ceramics and covered with clear silicone resin.

P channel 600v 20a IGBT

Abstract: mig20j
Contextual Info: TOSHIBA MIG20J906H TOSHIBA INTEGRATED 1GBT MODULE SILICONE N CHANNEL 1GBT MIG20J906H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package • Output Inverter Stage :

TLP785GB

Abstract: 11-5L107 TLP785F TLP785 EN60747-5-2 TL-P785 TLP785 TLP78 BR 13005 A
Contextual Info: TLP785,TLP785F TOSHIBA Photocoupler GaAs IRED & Photo−Transistor TLP785,TLP785F Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP785 consists of a silicone phototransistor optically

EN60065

Abstract: TOSHIBA VDE DIODE S4 58A DIODE S4 62a UL1577 TLP421 TLP421F DIN-VDE0884 TOSHIBA TUV VDE0884
Contextual Info: TO SH IBA TLP421F TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421F HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421F consists of a silicone photo-transistor

TLP781

Abstract: EN60747-5-2 TLP781GB
Contextual Info: TLP781 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP781 Tentative Unit in mm Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP781 consists of a silicone photo−transistor

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QR424Z1S-N1 PRELIMINARY SPEC Neutral White ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with AlGaInN Features z White SMD package, silicone resin.

K1921

Abstract: AA3535QR425Z1S-W2
Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QR425Z1S-W2 Warm White ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features The source color devices are made with InGaN on Al2O3 z White SMD package, silicone resin.

03144

Abstract: PT555
Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QR424Z1S-W2 PRELIMINARY SPEC Warm White ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with AlGaInN Features z White SMD package, silicone resin.

TLP781F

Abstract: TLP781 VDE60747-5-2 "photo transistor" UL1577
Contextual Info: TLP781F TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP781F Tentative Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits Unit in mm The TOSHIBA TLP781F consists of a silicone photo−transistor optically

LEDW47-66-60

Contextual Info: LEDW47-66-60 TECHNICAL DATA High Power LED Array, 60 chips InGaN LEDW47-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaN blue color diode chips, mounted on a metal stem TO-66 and covered with silicone resin.

LED365-66-60

Contextual Info: LED365-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaN LED365-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaN diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with clear silicone resin.

SI8011

Abstract: Toshiba axial diodes g-746
Contextual Info: 1-1-2 Switching Mode Regulator ICs Application Note • Heat Dissipation and Reliability ■ Mounting Torque The reliability of an IC is highly dependent on its operating temperature. Please be sure to apply silicone grease to the IC and to mount it to the

G746

Abstract: YG-6260 SI8011 Toshiba axial diodes power Diode 200V 10A YG6260
Contextual Info: 1-1-2 Switching Mode Regulator IC Application Note • Heat Dissipation and Reliability ■ Mounting Torque The reliability of an IC is highly dependent on its operating temperature. Please be sure to apply silicone grease to the IC and to mount it to the

LED735-66-60

Contextual Info: LED735-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaAs LED735-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin.