SILICONE DIODE Search Results

SILICONE

Abstract: SILICONE RUBBER IR150DR-G
Contextual Info: International §@3Rectifier Diodes Die Pre-Passivated Diode Die 1 Die Part No. (2) IR150DR-G Side Dimension (Inches) 0.150 Voltage Range Passivation Current lF(AV) (A)(3) Silicone Rubber 16 100-1200 6F, 12F, 16F Equiv. Device Series (V) IR180DR-G 0.180 Silicone Rubber

KJR9022E

Abstract: KJR4013E GTO thyristor driver KJR651 KJR9061E silicone low volatile potting G1821 KJR-9010E KJR651E KJR9060E
Contextual Info: Shin-Etsu Liquid Coating Materials for Electronic Devices KJR Series Junction Coating Resins Liquid Type Silicone & Polyimide Silicone for Electronic, Electric and Optical Devices Main Features ●Ultra High Purity ●High Thermal Stability ●High Electrical Stability

Contextual Info: Silicone Heat Transfer Compound Page 1 of 1 Silicone Heat Transfer Compound 860 z High thermal conductivity High dielectric constant High dissipation factor Use with heat sinks or metal chassis Will not dry or harden z Contains zincs oxides and polydimenthyl siloxane

HLT22

Abstract: Rosenthal HL-26 HLA130 HLT25 HLT-15 HLA051 GRID Resistors HL025 hl050
Contextual Info: Silicone Coate d HL x x w w w. v i s h a y. c o m Selector Guide Industrial wirewound resistors R e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Industrial Wirewound Resistors Silicone Coated Key Features • A wide range of high power ratings 3 W to 375 W

metal rectifier diode

Contextual Info: Bulletin I0150J 02/03 IR19DDR12L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 19 mm Diameter VRRM Class: 1200 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage 1.32 V

Contextual Info: High g Reliability y Rectifier Diodes silicone diffusion junction type ROHM's unique diffusion process offers high surge resistance in a compact package (2616-size) - ideal for automotive applications. Withstands high voltage and current surges! Withstands high surges

metal rectifier diode

Contextual Info: Bulletin I0151J 02/03 IR24DDR12L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 24 mm Diameter V RRM Class: 1200 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage 1.35 V

IR24CDR

Abstract: ir24cdr.l ir24c
Contextual Info: Bulletin I0303J rev. A 02/03 IR24CDR.L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 24 mm Diameter VRRM Class: 400V - 800 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage

AA3535QR425Z1S-N1

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP AA3535QR425Z1S SERIES ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features The source color devices are made with InGaN on Al2O3 z White SMD package, silicone resin. substrate Light Emitting Diode.

3055 smd

Abstract: 3578 smd AA3535QR425Z1S-N1 LM 3177 lm 3751 4221 transistor datasheet AA3535QR425Z1S-C1 AA3535QR425Z1S-W2 cd 3274 datasheets transistor k 4212
Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP AA3535QR425Z1S SERIES ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features The source color devices are made with InGaN on Al2O3 z White SMD package, silicone resin. substrate Light Emitting Diode.

Contextual Info: Bulletin I0304J rev. A 02/03 IR19CDR.L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 19 mm Diameter VRRM Class: 400 - 800 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage

Contextual Info: Cryogenic Temperature Transmitters For CY7 Series Diode Sensor and Platinum RTD Elements MADE IN USA Model CYTX231P-115 with Enclosure $ 645 Basic Unit ߜ Models for Silicone Diode or Platinum RTD Elements ߜ Accuracy ±0.07K at 4.2K Factory Calibration in

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SYLZ4S ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Super Bright Yellow Description The source color devices are made with AlGaInP Light Features Emitting Diode. White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Hyper Orange Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP ATTENTION Part Number: AA3535SEL1Z1S Hyper Orange OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Hyper Orange Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

metal rectifier diode

Contextual Info: Bulletin I0305J rev. A 02/03 IR19EDR.L SERIES HIGH POWER RECTIFIER DIODES Junction Size: 19 mm Diameter V RRM Class: 1600 to 2500 V Passivation Process: Silicone Rubber Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SYLZ4S ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Super Bright Yellow Description The source color devices are made with AlGaInP Light Features Emitting Diode. z White SMD package, silicone resin.

Contextual Info: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: KA-3535SELZ4S Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode. z White SMD package, silicone resin.