IC-3479
Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits
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PA1428A
PA1428A
PA1428AH
IC-3479
IC-8359
uPA1428
transistor array high speed
uPA1428AH
IEI-1213
PA1428
MF-1134
PA1428AH
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PA1476
Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1476
PA1476
PA1476H
transistor b 1202
uPA1476
uPA1476H nec
UPA1476H
NEC SIP
pa*476
IEI-1213
MEI-1202
MF-1134
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ic 8705
Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1436A
PA1436A
PA1436AH
ic 8705
IC-8705
nec 8705
IC-3482
PA1436AH
IEI-1209
UPA1436AH
pa1436
transistor array high speed
IEI-1213
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DARLINGTON MANUAL
Abstract: pa1436ah uPA1436H pa1436 iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1436
PA1436
PA1436H
DARLINGTON MANUAL
pa1436ah
uPA1436H
iei-1209
DARLINGTON TRANSISTOR ARRAY
MF-1134
npn darlington array
IEI-1213
MEI-1202
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IC-3523
Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1458
PA1458
PA1458H
IC-3523
IC-6342
MEI-1202
MF-1134
IEI-1213
power transistor array
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uPA1456H
Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1456
PA1456
PA1456H
uPA1456H
IC-3521
IC-6340
IEI-1213
MEI-1202
MF-1134
DARLINGTON TRANSISTOR ARRAY
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pa1437
Abstract: IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1437
PA1437
PA1437H
IC-3516
pnp DARLINGTON TRANSISTOR ARRAY
IEI-1209
pnp darlington array
IEI-1213
MEI-1202
MF-1134
PA1437H
power transistor array
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IC-6634
Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1478
PA1478
PA1478H
IC-6634
MEI-1202
MF-1134
IEI-1213
2di50
DARLINGTON TRANSISTOR ARRAY
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IC-6339
Abstract: PA1453 IEI-1213 MEI-1202 MF-1134 ic 926
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1453 PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1453 is PNP silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,
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PA1453
PA1453
PA1453H
IC-6339
IEI-1213
MEI-1202
MF-1134
ic 926
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d1117
Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
Contextual Info: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V
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2SA1988
2SA1988
MP-88
d1117
TRANSISTOR 2202 BL
C10535E
C10943X
MEI-1202
MP-88
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IC-3520
Abstract: uPA1454H PA1454 IEI-1213 MEI-1202 MF-1134 iei-1209
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1454 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1454 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,
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PA1454
PA1454
PA1454H
IC-3520
uPA1454H
IEI-1213
MEI-1202
MF-1134
iei-1209
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PA1434H
Abstract: iei-1209 pa1434 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1434 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1434 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,
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PA1434
PA1434
PA1434H
PA1434H
iei-1209
IEI-1213
MEI-1202
MF-1134
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PT 6062A
Abstract: EL1202 1B2 zener diode 2SD1702 IEI-1213 MEI-1202 MF-1134 1702 NPN transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1702 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 17 02 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. FEATURES PACKAGE DIMENSIONS in millimeters
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2SD1702
2SD1702
PT 6062A
EL1202
1B2 zener diode
IEI-1213
MEI-1202
MF-1134
1702 NPN transistor
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iei-1209
Abstract: PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY /¿PA1428 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The/xPA1428 is NPN silicon epitaxial D arlington Power T ransistor A rray th at b u ilt in Surge Absorber 4 circuits
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uPA1428
The/xPA1428
PA1428H
IEI-1209)
iei-1209
PA1428
IC-6633
IEI-1213
MEI-1202
MF-1134
NEC RELAY
DARLINGTON TRANSISTOR ARRAY
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NEC IC D 553 C
Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.
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2SC4095
2SC4095
NEC IC D 553 C
nec d 588
nec 817
D 5038 transistor
PE 7058
TRANSISTOR R46
p10367
transistor NEC D 586
NEC D 586
RIO R47
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nec 817
Abstract: TRANSISTOR R46 2SC4095 transistor r47
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
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2SC4095
2SC4095
nec 817
TRANSISTOR R46
transistor r47
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2sc3618 application
Abstract: 2SC3618 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3618 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2SC3618 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURE PACKAGE DIMENSIONS •
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2SC3618
2SC3618
2sc3618 application
IEI-1213
MEI-1202
MF-1134
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IEI-1213
Abstract: 2SD999 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package
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2SD999
2SD999
OT-89
2SB798
IEI-1213
MEI-1202
MF-1134
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
2SB798
5493A
IE1-1209
nec transistor selection guide
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MARKING J1A
Abstract: 2SA1412-Z 2SC3631-Z MEI-1202
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SA1412-Z is designed for High Voltage Switching, especially PACKAGE DIMENSIONS in millimeters in Hybrid Integrated Circuits. FEATURES • High Voltage :
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2SA1412-Z
2SA1412-Z
2SC3631-Z
IEI-1209)
MARKING J1A
2SC3631-Z
MEI-1202
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PDF
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SOT23 JEDEC standard orientation pad size
Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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OT-223
PZT2222AT1
PZT2907AT1
inch/1000
PZT2907AT3
inch/4000
uni218A
MSC1621T1
SOT23 JEDEC standard orientation pad size
sot-23 npn marking code VD
BC237
p2f sot-23
transistor 2N5458
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BC237
Abstract: BC238B MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value
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PZTA42T1
318E-04,
O-261AA
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
BC238B MOTOROLA
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BFr pnp transistor
Abstract: zt751 PZT651T1 PZT751T1G
Contextual Info: PZT751T1G PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
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PZT751T1G
OT-223
OT--223
PZT651T1
PZT751T1/D
BFr pnp transistor
zt751
PZT651T1
PZT751T1G
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5490A
Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package
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2SB798
2SD999
5490A
B 1359
970-900
2SD999
IEI-1213
MEI-1202
MF-1134
marking dk sot-89
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PDF
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TEB-1003
Abstract: 2SB768 2SD1033 MEI-1202 2sb768 nec MEI Semiconductors
Contextual Info: ! DATA SHEET N E C ^r SILICON TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2SB768 is designed fo r Color TV Vertical Deflection Output, in millimeters especially in Hybrid Integrated Circuits. FEATURES •
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2SB768
2SB768
2SD1033
IEI-1209)
TEB-1003
2SD1033
MEI-1202
2sb768 nec
MEI Semiconductors
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PDF
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