SILICON THERMAL GREASE Search Results

Dow Corning 340

Abstract: Dow Corning Dow Corning d 340 DOW 340 heat sink compound 340 Heat Sink Compound Semco cartridge AGP5223 D 217 dow corning silicone compound
Contextual Info: Product Information Silicon-Based Compounds Dow Corning 340 Heat Sink Compound FEATURES • High thermal conductivity • Low bleed • Stable at high temperatures COMPOSITION • Greaselike silicone fluid thickened with metal oxide filler Compound provides thermal coupling of electrical/electronic

Contextual Info: THERMAL PERFORMANCE OF AN ELLIPTICAL PIN FIN HEAT SINK Christopher L. Chapman, and Seri Lee Aavid Engineering, Inc. Laconia, New Hampshire 03247 Bill L. Schmidt Silicon Graphics Computer Systems Mountainview, California 94039 L m Abstract Comparative thermal tests have been carried out using

DIM150PSM45-F000

Contextual Info: Preliminary Information DIM150PSM45-F000 Single Switch IGBT Module DS5956.1 January 2010 LN26978 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES

microcontroller base rectifier using scr

Abstract: AN10384 TRIAC power control circuit full wave triac speed controller TO92 triac how to calculate junction to ambient thermal resistance Triac application note drill motor speed control circuit refrigerator thermostat to220 mica
Contextual Info: AN10384 Triacs: How to calculate power and predict Tjmax Rev. 01 — 10 August 2005 Application note Document information Info Content Keywords Triac, Silicon Controlled Rectifier, power, thermal resistance, heatsink, Tjmax, knee voltage, slope resistance

bi-directional switches IGBT

Abstract: dim400xsm65 ge traction motor DIM400XSM65-K000
Contextual Info: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.3 June 2007 LN25453 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates APPLICATIONS • High Reliability Inverters • Motor Controllers

DIM800FSM17-A000

Abstract: LIN26325
Contextual Info: DIM800FSM17-A000 Single Switch IGBT Module DS5461-3.2 August 2008 LIN26325 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES

DIM1200FSM12-A000

Abstract: LIN26322
Contextual Info: DIM1200FSM12-A000 Single Switch IGBT Module DS5547-3.1 August 2008 LIN26322 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES

DIM1600FSM12-A000

Abstract: LIN26324
Contextual Info: DIM1600FSM12-A000 Single Switch IGBT Module DS5533-3.1 August 2008 LIN26324 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES

bi-directional switches IGBT

Abstract: DIM800FSM12-A000 LIN26320 lin26
Contextual Info: DIM800FSM12-A000 Single Switch IGBT Module DS5531-3.1 August 2008 LIN26320 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES

Contextual Info: 1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

DIM1200FSM12-A000

Abstract: IC LM 723 2764-3 DS5547-1
Contextual Info: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Preliminary Information DS5547-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

AN4502

Abstract: AN4503 GP1200ESM33 DS5308-1
Contextual Info: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001

AN4502

Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
Contextual Info: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

mj 13005

Abstract: DIM100XCM65-F000 DIM200XCM65-F000 6500V VCES 6500V
Contextual Info: Preliminary information DIM100XCM65-F000 IGBT Chopper Module DS5957-1 January 2010 LN26983 FEATURES KEY PARAMETERS • High Thermal Cycling Capability  Soft Punch Through Silicon  Isolated AlSiC Base with AlN Substrates VCES VCE(sat) * (typ) IC (max)

Contextual Info: DIM1200FSM17-A000 DIM1200FSM17-A000 Single Switch IGBT Module Preliminary Information DS5456-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

Contextual Info: DIM2400ESM17-A000 DIM2400ESM17-A000 Single Switch IGBT Module Preliminary Information DS5447-2.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

Contextual Info: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

Contextual Info: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Preliminary Information DS5455-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

LM 13500

Abstract: DIM2400ESM12-A000
Contextual Info: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

NTE5371

Abstract: NTE5372 NTE537
Contextual Info: NTE5371 & NTE5372 Silicon Controlled Rectifier SCR for High Speed Switching 125 Amp, TO94 Features: D All Diffused Design D Center Amplifying Gate D High Surge Current Capability D Low Thermal Impedance D High Speed Performance Applications: D Inverters

Contextual Info: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DIM1800ESM12-A000

Contextual Info: DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 April 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DIM1600FSM12-A000

Contextual Info: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Preliminary Information DS5533-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

AN4505

Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Contextual Info: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates