SILICON TECHNOLOGY RELIABILITY Search Results

plx 9054 fpga dma vhdl

Abstract: 8114RDK vhdl code for pci 9056 mpc 9700 plx vhdl code PCI9080-3 plx 9052 plx 9030 PCI 6140-AA33PC G PCI 9656 schematic
Contextual Info: PLX Technology The Leading Supplier of Standard I/O Interconnect Silicon PRODUCT GUIDE/LINECARD VERSION 2.0, 2004 PLX Technology, Inc. www.plxtech.com , is the leading supplier of standard I/O interconnect silicon to the communications, server, storage, embedded-control, and consumer industries.

SFH501-1

Abstract: SFH501 E605 SFH501-2
Contextual Info: SIEMENS SFH501 SILICON DARLINGTON PHOTOTRANSISTOR FEATURES Maximum Ratings • Silicon Darlington Phototransistor in Epitaxial Planar Technology • Basa Connection, Collector Terminal Electrically Connected to Case • High Reliability Operating and Storage Temperature

Contextual Info: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced

S7201

Abstract: D701 EEPROM cross NAND read disturb SST superflash picture of d701 TRansistor 701
Contextual Info: SuperFlash EEPROM Technology Technical Paper November 2001 SuperFlash EEPROM Technology INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The SuperFlash technology and memory cell have a number of important

Contextual Info: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal

tyn scr 1225

Abstract: TYN1225 tyn 1225
Contextual Info: TYN 225 -> TYN 1225 SCR . . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 225 -> TYN 1025 Family Silicon Controlled Rectifiers are high performance glass passivated chips technology. This general purpose Family Silicon Controlled

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

PHOTODIODE 708

Abstract: br A 708
Contextual Info: • bfl02245 000014? 7 IOTI OPTO TECHNOLOGY INC 42E T> Ml-3/ OPTO TECHNOLOGY PN SILICON PHOTODIODE T Y P E OT 4 2 3 Features ■ Low co st ■ High speed ■ T-1 plastic package Description Opto Technology's OT 4 2 3 con­ s is ts of a PN junction silicon

Contextual Info: TC74HC123AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC123AP,TC74HC123AF,TC74HC123AFN Dual Retriggerable Monostable Multivibrator The TC74HC123A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology.

Contextual Info: MOTOROLA Order this document by MC74LVX4066/D SEMICONDUCTOR TECHNICAL DATA Advance Information Quad Analog Switch/ MC74LVX4066 Multiplexer/Demultiplexer High–Performance Silicon–Gate CMOS The MC74LVX4066 utilizes silicon–gate CMOS technology to achieve

TYN606

Abstract: TYN1006 W360
Contextual Info: TYN606 TYN1006 SCR A FEATURES High surge capability High on-state current High stability and reliability • G ■ K ■ DESCRIPTION The TYN606 and TYN1006 Family of Silicon Controlled Rectifiers are high performance glass passivated technology. This general purpose Family of Silicon Controlled

74ALS04

Abstract: diode sy 710 TC74VHCU04 TC74VHCU04F TC74VHCU04FN TC74VHCU04FS TC74VHCU04FT
Contextual Info: TOSHIBA TC74VHCU04F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCU04F, TC74VHCU04FN, TC74VHCU04FS, TC74VHCU04FT HEX INVERTER The TC74VHCU04 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

VHC4051

Abstract: VHC4052 VHC4053 54X7
Contextual Info: MOTOROLA Order this document by MC74VHCT4351/D SEMICONDUCTOR TECHNICAL DATA Advance Information MC74VHCT4351 Analog Multiplexer/ Demultiplexer with Address Latch High–Performance Silicon–Gate CMOS The MC74VHCT4351 utilizes silicon–gate CMOS technology to achieve

74VHC

Abstract: DL203 VHC4051 VHC4052 VHC4053
Contextual Info: MOTOROLA Order this document by MC74VHC4351/D SEMICONDUCTOR TECHNICAL DATA Advance Information MC74VHC4351 Analog Multiplexer/ Demultiplexer with Address Latch High–Performance Silicon–Gate CMOS The MC74VHC4351 utilizes silicon–gate CMOS technology to achieve

TC74VHC4066AFT

Abstract: TC74VHC4066AF TC74VHC4066AFK
Contextual Info: TC74VHC4066AF/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC4066AF, TC74VHC4066AFT, TC74VHC4066AFK Quad Bilateral Switch The TC74VHC4066A is high-speed, low-voltage drive QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology.

Contextual Info: TC74VHC4066AF/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC4066AF, TC74VHC4066AFT, TC74VHC4066AFK Quad Bilateral Switch The TC74VHC4066A is high-speed, low-voltage drive QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology.

Contextual Info: MC74LVX4053 Analog Multiplexer/ Demultiplexer High−Performance Silicon−Gate CMOS The MC74LVX4053 utilizes silicon−gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF leakage currents. This analog multiplexer/demultiplexer controls

948F

Abstract: HC4053A LVXT8053 MC14053B MC74LVXT8053 MC74LVXT8053DR2 MC74LVXT8053DT MC74LVXT8053DTR2
Contextual Info: MC74LVXT8053 Analog Multiplexer / Demultiplexer High–Performance Silicon–Gate CMOS The MC74LVXT8053 utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF leakage currents. This analog multiplexer/demultiplexer controls