SILICON SWITCHING DIODE Search Results

diode 701

Abstract: MMT3960A MMT3905 MMCM3905 MMCM3906 MMCM3960A MMD6050 MMD70 MMT3960
Contextual Info: MMCM3905, MMCM3906 silicon (ceramic package) For Specifications, See MMT3905 Data. MMCM3960A (SILICON) (CERAMIC PACKAGE) For Specifications, See MMT3960A Data. MMD70 (SILICON) MICROMINIATURE SILICON EPITAXIAL SWITCHING DIODE SILICON EPITAXIAL SWITCHING DIODE

Contextual Info: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes MICROWAVE PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX COMPONENTS uses its proprietary technology to manufacture its Silicon PIN diodes in plastic

TEKELEC 302

Abstract: Tekelec Temex
Contextual Info: SILICON PIN DIODES SOT23 surface mount switching silicon PIN diodes SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES Features Description • Low series resistance • Low capacitance • Fast switching diodes • Surface mount package • Tape and reel packaging available

MPN3401

Abstract: MPN3402
Contextual Info: MPN3401 silicon MPN3402 SILICON PIN SWITCHING DIODE SILICON PIN DIODE . . . designed primarily for VH F band switching applications but also suitable for use in general-purpose switching and attenuator circuits. Supplied in an inexpensive low-inductance plastic package for low

NEC IR

Abstract: 1SS303 NEC IR application note
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.

marking A14

Abstract: 1SS305
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS305 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODE FEATURES PACKAGE DIMENSIONS Unit: mm • Low capacitance: Ct = 4.0 pF MAX. • High speed switching: trr = 3.0 ns MAX. • Wide applications including switching, limitter, clipper.

NEC 2101

Abstract: 1SS304 marking A6
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.

MMD7001

Abstract: DP 704 C
Contextual Info: MMD7001 silicon MICROMINIATURE SILICON EPITAXIAL DUAL SWITCHING DIODE SILICON EPITAXIAL DUAL SWITCHING DIODE . . . designed fo r general purpose, high-speed switching applications. • High Breakdown Voltage — • Fast Reverse Recovery Tim e t rr = 3.2 ns (T y p ) @ I p = I r = 10 m Adc

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

Contextual Info: Silicon Pin Diode MMBV3401LT1 This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE • Rugged Pin Structure Coupled with Wirebond Construction

d2 diode series

Abstract: marking code DIODE R3 ulc 2003 diode Marking Code 65 marking code REC marking code diode marking CODE D2 DIODE diode marking JA MARKING CODE VF CMPD6001
Contextual Info: CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process,

L4821A

Abstract: SPD10S30 A101 SIDC03D30SIC2
Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

DIODE MARKING CODE F1

Abstract: IR 30 D1 Diode CMPD3003 CMPD3003A CMPD3003C CMPD3003S JA marking Diode Switching d2 marking lla marking code DIODE
Contextual Info: CMPD3003 CMPD3003A CMPD3003C CMPD3003S Central TM Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process,

CMXD2004TO

Abstract: marking D3 SOT26
Contextual Info: Central CMXD2004TO TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three 3 Isolated High Voltage Silicon Switching Diodes arranged

Contextual Info: PIN DIODES A " • ■jfv- 'v :>■: Dh Oh >C■t Ultra-fast Switching Silicon PIN Diodes. 14 Fast Switching Silicon PIN D io d e s . 15 Beam Lead PIN Diodes. 16

MARKING CODE l22

Abstract: l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja CMPD1001 Marking code TM SOT23-6 CMPD1001S
Contextual Info: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for

1SS123-A

Abstract: NEC IR 1SS123 A CLIPPER CIRCUIT APPLICATIONS
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS123 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : SERIES CONNECTED MINI MOLD FEATURES PACKAGE DIMENSIONS • Low capacitance: Ct = 4 .0 pF M A X . in millimeters • High speed switching: t rr = 9 .0 ns M A X .

Contextual Info: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied

marking D3 SOT26

Abstract: CMXD2004
Contextual Info: Central CMXD2004 TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three 3 Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial

SDT05S60

Abstract: SIDC16D60SIC3 C-19200 DSA0037454
Contextual Info: SIDC16D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior

SCHOTTKY 4A 600V

Abstract: DIODE 200A 600V schottky
Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied

Contextual Info: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied