SILICON SWITCHING DIODE Search Results

diode 701

Abstract: MMT3960A MMT3905 MMCM3905 MMCM3906 MMCM3960A MMD6050 MMD70 MMT3960
Contextual Info: MMCM3905, MMCM3906 silicon (ceramic package) For Specifications, See MMT3905 Data. MMCM3960A (SILICON) (CERAMIC PACKAGE) For Specifications, See MMT3960A Data. MMD70 (SILICON) MICROMINIATURE SILICON EPITAXIAL SWITCHING DIODE SILICON EPITAXIAL SWITCHING DIODE

Contextual Info: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes MICROWAVE PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX COMPONENTS uses its proprietary technology to manufacture its Silicon PIN diodes in plastic

TEKELEC 302

Abstract: Tekelec Temex
Contextual Info: SILICON PIN DIODES SOT23 surface mount switching silicon PIN diodes SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES Features Description • Low series resistance • Low capacitance • Fast switching diodes • Surface mount package • Tape and reel packaging available

MPN3401

Abstract: MPN3402
Contextual Info: MPN3401 silicon MPN3402 SILICON PIN SWITCHING DIODE SILICON PIN DIODE . . . designed primarily for VH F band switching applications but also suitable for use in general-purpose switching and attenuator circuits. Supplied in an inexpensive low-inductance plastic package for low

NEC IR

Abstract: 1SS303 NEC IR application note
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.

marking A14

Abstract: 1SS305
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS305 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODE FEATURES PACKAGE DIMENSIONS Unit: mm • Low capacitance: Ct = 4.0 pF MAX. • High speed switching: trr = 3.0 ns MAX. • Wide applications including switching, limitter, clipper.

NEC 2101

Abstract: 1SS304 marking A6
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.

MMD7001

Abstract: DP 704 C
Contextual Info: MMD7001 silicon MICROMINIATURE SILICON EPITAXIAL DUAL SWITCHING DIODE SILICON EPITAXIAL DUAL SWITCHING DIODE . . . designed fo r general purpose, high-speed switching applications. • High Breakdown Voltage — • Fast Reverse Recovery Tim e t rr = 3.2 ns (T y p ) @ I p = I r = 10 m Adc

MA47080-30

Contextual Info: MA47080-30 SILICON PIN SWITCHING DIODE DESCRIPTION: The ASI MA47080-30 is a Passivated Silicon PIN Switching Diode. Designed for control applications such as RF Switching, Limiting, Duplexing, Phase Shifting Variable Attenuation, Modulation, and Pulse forming.

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

DIODE 4d

Abstract: MMBV3401LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode MMBV3401LT1 This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

Contextual Info: AP1000A-001 SILICON PIN SWITCHING DIODE DESCRIPTION: The AP1000A-001 is a passivated epitaxial Silicon PIN Switching Diode, designed to cover a wide range of control applications that are in the category of RF switching. PACKAGE STYLE 001 MAXIMUM RATINGS IC

Contextual Info: Silicon Pin Diode MMBV3401LT1 This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE • Rugged Pin Structure Coupled with Wirebond Construction

L4821A

Abstract: SPD10S30 A101 SIDC03D30SIC2
Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

DIODE MARKING CODE F1

Abstract: IR 30 D1 Diode CMPD3003 CMPD3003A CMPD3003C CMPD3003S JA marking Diode Switching d2 marking lla marking code DIODE
Contextual Info: CMPD3003 CMPD3003A CMPD3003C CMPD3003S Central TM Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process,

L4821A

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

CMXD2004TO

Abstract: marking D3 SOT26
Contextual Info: Central CMXD2004TO TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three 3 Isolated High Voltage Silicon Switching Diodes arranged

Contextual Info: PIN DIODES A " • ■jfv- 'v :>■: Dh Oh >C■t Ultra-fast Switching Silicon PIN Diodes. 14 Fast Switching Silicon PIN D io d e s . 15 Beam Lead PIN Diodes. 16

MARKING CODE l22

Abstract: l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja CMPD1001 Marking code TM SOT23-6 CMPD1001S
Contextual Info: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for

1SS123-A

Abstract: NEC IR 1SS123 A CLIPPER CIRCUIT APPLICATIONS
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS123 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : SERIES CONNECTED MINI MOLD FEATURES PACKAGE DIMENSIONS • Low capacitance: Ct = 4 .0 pF M A X . in millimeters • High speed switching: t rr = 9 .0 ns M A X .

Contextual Info: SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied