SILICON PIN PHOTODIODE LASER Search Results

SUN SENSOR

Abstract: "SUN SENSOR" KDS1001AF2 VOC sensor photodiodes
Contextual Info: NEW PRODUCT PIN Photodiode KDS1001AF2 Description The KDS1001AF2 is a silicon PIN Photodiode has two active areas Photodiodes integrated in one chip Features - Two segmented photodiodes - Flat plastic package - Laser beam focusing / positioning is best performed

TOX9108

Abstract: large area quadrant photodiode quadrant photodiode quadrant PIN
Contextual Info: Select Products Here Go DESCRIPTION TOX 9108 Large Area Silicon Quadrant PIN Photodiode FEATURES The TOX 9108 is a high speed, quadrant-geometry, high-resistivity P-type silicon photodiode. It is a precision device designed specifically for application in laser alignment

REL 07 B1-1.0

Abstract: BPW97
Contextual Info: BPW97 Vishay Semiconductors Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal,

BPW97

Contextual Info: TELEFUNKEN Semiconductors BPW 97 Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve

BPW97

Contextual Info: BPW97 Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his system.

REL 07 B1-1.0

Abstract: BPW97 81533
Contextual Info: BPW97 Vishay Telefunken Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his

Contextual Info: BPW97 Vishay Telefunken Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his

BPW97

Abstract: REL 07 B1-1.0
Contextual Info: BPW97 Vishay Telefunken Silicon PIN Photodiode Description BPW97 is an extra high speed PIN photodiode in a hermetically sealed TO–18 package. Unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his

SCA-006CQD

Abstract: quadrant photodiode annular anode
Contextual Info: SCA-006CQD Silicon PIN Photodiode Data Sheet Description Applications The SCA-006CQD features a four matched quadrant • • • • • elements and are a high sensitive silicon PIN photodiodes for Position Sensing Optical Encoders Optical Alignment Angular Displacement

S239P

Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
Contextual Info: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted

1e15

Contextual Info: SCA-006CQD Silicon PIN Photodiode Data Sheet Description Applications The SCA-006CQD features a four matched quadrant • • • • • elements and are a high sensitive silicon PIN photodiodes for Position Sensing Optical Encoders Optical Alignment Angular Displacement

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Contextual Info: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS

Contextual Info: TO I TOX 9110 Silicon PIN Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9110 is a high-resistivity silicon PIN detector used in military and commercial light sensor applications. Designed to have high performance from 0.9 //m to 1.06 /jm . The TOX

S 239 P

Abstract: S239P
Contextual Info: Te m ic TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted

Contextual Info: TOI TOX 9110 Silicon PIN Photodiode Texas Optoelectronics, Inc. DESCRIPTION F EA TU RES The TOX 9110 is a high-resistivity silicon PIN detector used in military and commercial light sensor applications. Designed to have high performance from 0.9 //m to 1.06 fim. The T O X

s452

Contextual Info: Temic S e m i c u n BPW97 d u et o r s Silicon PIN Photodiode Description BPW 97 is an extra high speed PIN photodiode in a h erm etically sealed T O - 18 package. U nlike m ost sim ilar devices, the cathode term inal is iso­ lated from case and connected to a third term inal, giving

PN312D

Abstract: PNZ312DN photo sensor matsua
Contextual Info: PIN Photodiodes Part number notation The part number noten on the following pages is a conventional part number. The new Matsushita global number is: PNZ312DN PIN Photodiodes PN312D N Silicon PIN Dual Photodiode Unit : mm 1.0±0.2 ø3.2 Dep. 0.1(typ.) 10˚

TO-5 window Cap

Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Low Profile Type PDB-C119LP-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] TO-5 HERMETIC CAN PACKAGE ACTIVE AREA = 7.95 mm2 DESCRIPTION APPLICATIONS The PDB-C119LP-I is a silicon, PIN planar diffused,

PN316K2

Contextual Info: Panasonic PIN Photodiodes PN316K2 Hex. Division Silicon PIN Photodiode For optical information systems • Features • • • • • • Fast response : tr = 3 ns typ. Good photo current linearity Low dark current : ID = 2 nA (max.) Wide spectral responsivity

vr 10 L 8 photo

Abstract: PN3405
Contextual Info: Panasonic PIN Photodiodes PN3405 Quad. Division Silicon PIN Photodiode U n it : m m 1.8+0.3 For optical information systems • Features Fast response : tr, tf = 20 ns typ. Good photo current linearity Low dark current : ID = 10 nA (max.) High reliability

2464

Abstract: HPI-2464 HPI-2464R5
Contextual Info: PIN Photodiode KODENSHI HPI-2464・HPI-2464R5 DIMENSIONS Unit : mm The HPI-2464, 2464R5 are silicon PIN photodiodes for automatic focusing of camera. HPI-2464, 2464R5 have two active areas (photodiodes) integrated in one chip. FEATURES •Laser beam focusing/positioning is best performed.

Contextual Info: Panasonic PIN Photodiodes PN312D N Silicon PIN Dual Photodiode For optical information systems • Features • Fast response : tr, tf = 10 ns (typ.) • Good photo current linearity • Low dark current : ID = 20 nA (max.) • Small size plastic package (flat type)

IAG200

Contextual Info: Detectors H1 Series Silicon and InGaAs-APD Receiver Description The H1-Series includes a silicon or InGaAs avalanche photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a 12 pin TO-8 package they offer bandwidths up

Contextual Info: Panasonic PIN Photodiodes PN3405 Quad. Division Silicon PIN Photodiode Unit : mm 1.8+0.3 For optical information systems • Features • Fast response : tr, tf = 20 ns typ. V • Good photo current linearity • Low dark current : ID = 10 nA (max.) • H igh reliability