SILICON PHOTODIODE ARRAY Search Results

IR photodiode sensor

Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
Contextual Info: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is

S268P

Contextual Info: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant

CD 8403

Abstract: S268P
Contextual Info: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides

S268P

Contextual Info: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

S268P

Abstract: silicon photodiode array
Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

S268P

Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

S268P

Abstract: Photodiode Array
Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

Contextual Info: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

S268P

Abstract: silicon photodiode array
Contextual Info: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.

U850

Abstract: 2057 Siemens photodiode visible light
Contextual Info: SIEMENS KOM 2057 L 3-CHIP SILICON PIN PHOTODIODE ARRAY FEATURES Package Dimensions in mm * Silicon Photodiode in Planar Technology * N-Sl Material Anode, Front Contact Cathode, Back Contact * High Reliability * High Packing Oensity * Low Noise * No Testable Degradation

IE-120

Abstract: VB0 MARKING
Contextual Info: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT F EA T U R E S * Silicon Photodiode in Planar Technology Package Dimensions in mm PC board Frame Chip Transparent * N-Si Material Anode, Front Contact Cathode, Back Contact * High Reliability

2100-B

Contextual Info: SIEMENS KOM 2033 B DAYLIGHT FILTER KOM 2033 BF KOM 2100 B DAYLIGHT FILTER KOM 2100 BF 6-CHIP SILICON PIN PHOTODIODE ARRAY 8-44 FEATURES Characteristics, Single Segment TA= 2 5 °C , X =950 nm * Silicon Photodiode in Planar Technology Parameter * N-Si Material

silicon photodiode array

Abstract: PIN photodiode crosstalk PIN-Photodiode-Array 16 Photodiode-Array Photodiode-Array PIN photodiode A/W 850nm 480nm detection IR photodiode array Photodiode Array 2d Photodiode Array
Contextual Info: SCA-MA256ESP Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-MA256ESP is a back-illuminated silicon Array Configuration photodiode array module for use in applications where peak sensitivity from 480nm to 800nm is required.

Contextual Info: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation

Contextual Info: SIEMENS KOM 2085 4-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm Transparent Schematic K A2o-t¡l-to-oA1 A3o-C+- -KJ-o A4 FEA TU RES Characteristics, Single Segment TA=25°C, std. light A, T=2856 K * Silicon Photodiode in Planar Technology

Contextual Info: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective

Photodiode

Contextual Info: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective

Contextual Info: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as

Photodiode-Array

Abstract: PIN-Photodiode-Array Photodiode Array 2d 16 Photodiode-Array SCA-CA512ES silicon photodiode array Silicon Photodiode Chip 480nm detection photodiode array PIN photodiode chip
Contextual Info: SCA-CA512ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA512ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

SCA-CA64ES

Abstract: PIN-Photodiode-Array photodiode array Photodiode Array 2d Photodiode-Array Semicoa "PIN photodiode" "crosstalk" PIN photodiode 850 nm scintillator
Contextual Info: SCA-CA64ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA64ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

Photodiode Array 2d

Abstract: 16 Photodiode-Array Photodiode-Array PIN photodiode 850nm PIN-Photodiode-Array with scintillator PIN photodiode chip 850nm photodiode 850nm nep Semicoa "PIN photodiode" "crosstalk"
Contextual Info: SCA-CA256ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA256ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

Photodiode Array 2d

Abstract: PIN-Photodiode-Array with scintillator PIN-Photodiode-Array Photodiode-Array silicon photodiode array SCA-CA25ES 480nm detection PIN photodiode crosstalk
Contextual Info: SCA-CA25ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA25ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

Semicoa "PIN photodiode" "crosstalk"

Abstract: 480nm detection Photodiode Array 2d
Contextual Info: SCA-CA256ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA256ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

Contextual Info: SIEMENS KOM 2084 4-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm Frame PC board l \ | \ Chip \ \ Coating \ | Schematic K o A 2 0 -W -W -0 A 1 A3 o - t > f -W- 0 A4 FEATURES Characteristics, Single Segment TA=25°C, std. light A, T=2856 K * Silicon Photodiode in Planar Technology