SILICON PHOTODIODE Search Results
SILICON PHOTODIODE Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MX0912B351Y |
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MX0912B351Y - NPN Silicon RF Power Transistor |
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OPT301M |
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Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 |
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OPT101P-J |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT101P-JG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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SILICON PHOTODIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: STANDAR SILICON SENSORS ES Silicon Sensors offers a wide variety of silicon photodiodes configured for optimum performance. Silicon photodiodes respond in the spectral range from 250-1100 nm, with peak response around 900 nm. Device characteristics and spectral response can be |
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STBC-T08
Abstract: LCBC-TO5
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IR photodiode
Abstract: PSS1705 silicon photodiode
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PSS1705 PSS1705 ACTIV00 IR photodiode silicon photodiode | |
Contextual Info: T0X9103 Silicon Photodetector Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX9103 is a high performance silicon photodiode designed to operate in the photo conductive mode. High resistivity silicon is used to provide high 900 nm responsivity and low |
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T0X9103 OX9103 G00D524 | |
Photodiodes
Abstract: 13 dsi 005 Melles Melles Griot Photodiodes Germanium PIN 13DAS011 13DSI001 f-19 10414 13 DMA 015
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10-mm2 100-mm2 25-mmdiameter wh007 011/C3 011/C 10-nm Photodiodes 13 dsi 005 Melles Melles Griot Photodiodes Germanium PIN 13DAS011 13DSI001 f-19 10414 13 DMA 015 | |
TOX9103Contextual Info: T0X9103 Silicon Photodetector Texas Optoelectronics, Inc. DESCRIPTION FEATURES • • The TOX9103 is a high performance silicon photodiode designed to operate in the photo conductive mode. High resistivity silicon is used to provide high 900 nm responsivity and low |
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T0X9103 OX9103 TOX9103 | |
BPX92Contextual Info: SIEMENS BPX92 SILICON PHOTODIODE FEATURES * Silicon Planar Photodiode * Transparent Plastic Case * 0.2* 5.08 mm Lead Spacing * Low D ark Current, 1 nA Maximum Ratings DESCRIPTION The BPX 92 is a silicon planar photodiode in a transparent plastic package. Its terminals |
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BPX92 BPX92 | |
PSS15-7-TO5
Abstract: PIN photodiode 500 nm TO5 package To5 transistor
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PSS15-7-TO5 PSS15-7-TO5 PIN photodiode 500 nm TO5 package To5 transistor | |
PSS15-7-P
Abstract: PIN photodiode 500 nm
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PSS15-7-P PSS15-7-P PIN photodiode 500 nm | |
To5 transistor
Abstract: PIN photodiode 500 nm
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Photodiode laser detector BPX-65
Abstract: UDT Sensors BPX65 high sensitive PIN-HR008 BPX65 PIN-HR040L
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BPX-65 Photodiode laser detector BPX-65 UDT Sensors BPX65 high sensitive PIN-HR008 BPX65 PIN-HR040L | |
TOX9103Contextual Info: Select Products Here TOX 9103 Silicon Photodetector Go DESCRIPTION FEATURES The TOX9103 is a high performance silicon photodiode designed to operate in the photo conductive mode. High resistivity silicon is used to provide high 900 nm responsivity and low capacitance at low |
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OX9103 900nm com/catalog/tox9103/tox9103 TOX9103 | |
Contextual Info: Standard-Area Silicon Avalanche Photodiodes 230, 500 µm PD-LD Inc. offers 2 sizes of standard Silicon Avalanche Photodiodes in several styles of fiber coupled packages. The semiconductors are available in two standard sizes: 230 micron or 500 micron active areas. Our Silicon APDs cover |
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880nm 905nm | |
avalanche photodiodes
Abstract: AD-1100-9 AD-1900-9 AD-230-9 AD-2500-9 AD-3000-9 AD-5000-9 AD-500-9 AD-800-9 Silicon apd
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AD-230-90 AD500-9-1 905nm avalanche photodiodes AD-1100-9 AD-1900-9 AD-230-9 AD-2500-9 AD-3000-9 AD-5000-9 AD-500-9 AD-800-9 Silicon apd | |
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C30817E
Abstract: C30955EH
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C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH | |
MM53CContextual Info: 253922 SILICO N SE N S O R S IN C _ S I L I C O N S E N S O R S IN C 75 75C 0 Q 3 2 6 D T~ J> e | ö 5 S 3 T S S 0 Q □0 3 2 b S | ~ Síí i ' " '£ SILICON MESA PHOTODIODES • SILICON PLANAR PHOTODIODES SILICON BLUE-SENSITIVE PHOTODIODES • SILICON PIN PHOTODIODE |
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MM-53 MM-2010 2856K MM-53C MM-53 MM53C | |
LARGE SURFACE AREA PHOTODIODE
Abstract: large area quadrant photodiode quadrant photodiode quadrant silicon photodiode QP50-6 QP50-6-TO8 QP50-6-SM 50 um photodiode
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QP50-6-SM QP50-6-SM QP50-6-TO8. LARGE SURFACE AREA PHOTODIODE large area quadrant photodiode quadrant photodiode quadrant silicon photodiode QP50-6 QP50-6-TO8 50 um photodiode | |
large area quadrant photodiode
Abstract: quadrant photodiode LARGE SURFACE AREA PHOTODIODE quadrant silicon photodiode PSS-QP50-6-SM
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PSS-QP50-6-SM PSS-QP50-6-SM 50mm2, large area quadrant photodiode quadrant photodiode LARGE SURFACE AREA PHOTODIODE quadrant silicon photodiode | |
AD-1100-8
Abstract: avalanche photodiodes AD-230-8 AD500-1 120-190 ad500-13 rise time apd
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AD-2500-8 AD500-1 780nm AD-1100-8 avalanche photodiodes AD-230-8 120-190 ad500-13 rise time apd | |
all type transistor equivalent
Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter IR block photodiode phototransistor HV photodiode chip silicon Infrared Phototransistor pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
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AD-500-8
Abstract: AD500-8 avalanche photodiodes AD-1100-8 AD-1900-8 AD-230-8 AD-2500-8 AD-800-8 AD500-1 rise time apd
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AD-2500-8 AD500-1 780nm AD-500-8 AD500-8 avalanche photodiodes AD-1100-8 AD-1900-8 AD-230-8 AD-2500-8 AD-800-8 rise time apd | |
quadrant photodiode
Abstract: SFH244S t2856
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SFH244S SFH244 quadrant photodiode SFH244S t2856 | |
VTD34FSM
Abstract: bpw photodiode
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VTD34FSM VTD34FSM bpw photodiode | |
bpw 50
Abstract: PerkinElmer fyd-1150 K/PerkinElmer fyd-1150
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VTD34FSMH bpw 50 PerkinElmer fyd-1150 K/PerkinElmer fyd-1150 |