SILICON N CHANNEL IGBT HIGH SPEED Search Results

MBN1200E25C

Abstract: mbn1200e25c igbt
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05023 R0 MBN1200E25C Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70℃, N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module.

fin heat sink igbt

Abstract: diode chopper MBL1200E17D
Contextual Info: Spec.No.IGBT-SP-03013 R2 IGBT MODULE MBL1200E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70℃,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode

MBN400C20

Abstract: ultra low forward voltage diode
Contextual Info: IGBT MODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.

MBL800E33D

Contextual Info: Spec.No.IGBT-SP-03009 R2 P1/5 IGBT MODULE MBL800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability.(delta Tc=70 ,N>30,000cycles) ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode

Y11W

Abstract: MBL1200E17D
Contextual Info: IGBT MODULE MBL1200E17D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70 ,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

Contextual Info: Spec.No.IGBT-SP-10011-R3 P1/4 6in1 IGBT Module MBB600TV6A PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )

Contextual Info: Spec.No.IGBT-SP-10009-R3 P1/3 6in1 IGBT Module MBB350TV6 PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )

mbn400c20

Contextual Info: IGBT MODU ODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05023 R1 MBN1200E25C Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 , N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input

MBN1200D33A

Contextual Info: IGBT MODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling 6-M8 diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.

GT60M303

Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03013 R7 P1 MBL1200E17D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70K , N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03009 R3 MBL800E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

GT60M303 application

Abstract: GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)

GT60M303 application

Abstract: GT60M303 circuit igbt failure rate
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.

06008R5

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03009 R3 MBL800E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03013 R7 P1 MBL1200E17D Silicon N-channel IGBT FEATURES  High thermal fatigue durability. delta Tc=70K , N>30,000cycles  High speed, low loss IGBT module.  Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

GT60M303 application

Abstract: GT60M303 gt60m303 application notes
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-02007 R8 MBN2400E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) ∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-02007 R8 MBN2400E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) ∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)

MG150J7KS50

Contextual Info: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.